Near-field thermophotovoltaic (NFTPV) devices enable direct and efficient conversion of thermal radiation into electricity, showing great potential in waste heat recovery and nanoscale energy systems. To enhance conversion efficiency, we propose an NFTPV system based on an hBN/BP/InSb heterostructure, where hexagonal boron nitride (hBN) serves as the emitter, black phosphorus (BP) acts as a tunable interlayer, and indium antimonide (InSb) functions as the photovoltaic cell. The anisotropic surface plasmon polaritons (SPPs) in BP strongly couple with the hyperbolic phonon polaritons (HPPs) in hBN, thereby forming hybrid surface modes that enhance photon tunneling and achieve effective spectral matching with the interband transition of InSb, leading to a substantial increase in near-field radiative heat transfer. Based on fluctuational electrodynamics and detailed balance analysis combined with the transfer matrix method, we systematically evaluated four structural configurations—InSb-hBN, InSb/BP-hBN, InSb-BP/hBN, and InSb/BP-BP/hBN—and examined the influence of vacuum gap distance and BP carrier density on device performance. Among them, the InSb/BP-hBN configuration exhibits the highest performance, with an output power density of 1.2×10⁶ W/m² and a conversion efficiency approaching 60% of the Carnot limit at a 10 nm gap and 900 K emitter temperature. Furthermore, theoretical analysis reveals that the spatial position of BP critically determines the photon tunneling probability, thereby governing variations in output power and efficiency among different configurations. As the free electron concentration increases from 5×10¹² cm^-2 to 5×10¹³ cm^-2, the hybridization between SPPs and HPPs changes markedly, leading to distinct enhancement behaviors of radiative energy above and below the InSb bandgap. These findings clarify the mechanism by which SPPs-HPPs hybridization enhances NFTPV performance, offering new insights and design strategies for next-generation high-efficiency thermophotovoltaic devices.