Monolayer transition metal dichalcogenides host rich excitonic states, including bright excitons, dark excitons, charged complexes, and phonon-assisted sidebands, and therefore provide an important platform for studying low-dimensional excitonic many-body physics. However, in low-temperature photoluminescence measurements, weak excitonic features are often buried under broad defect-related emission, making reliable spectral separation and identification difficult. In this work, a low-temperature photoluminescence scheme based on dual-dielectric-microsphere remote coupling is developed to realize edge excitation and remote detection of excitonic emission in monolayer WSe₂. Two fused-silica microspheres with diameters of about 6 μm and a separation of 10-20 μm are used as the excitation and detection terminals, respectively. By taking advantage of the difference in effective propagation length between localized defect emission and propagating excitonic channels, together with mode-selective near-field coupling at the interface, the proposed geometry suppresses broad background emission and enhances weak exciton-related spectral features without applying external-field modulation. Experimental results show that, compared with center excitation, edge excitation increases the photoluminescence intensity by about 2.35 times and enables more stable observation of characteristic narrow peaks under remote detection. Systematic measurements performed under different microsphere resonance conditions and on different device regions reveal two robust spectral components, denoted as A (~1.691 eV) and B (~1.668 eV), whose energies remain locked relative to the bright exciton. Statistical analysis gives stable energy offsets of 67.1±5.5 meV and 87.6±5.8 meV for A and B, respectively. Further evidence from path-interchange measurements, local-damage perturbation, and power-dependent photoluminescence shows that the two components exhibit clearly different behaviors in the remote detection process: component A is more robust in long-range readout and shows an approximately linear power dependence (α = 1.104), whereas component B is more sensitive to path variation and local damage and exhibits a sublinear power dependence (α = 0.826). These results indicate that component A is more likely associated with a dark-state-related excitonic complex with stronger interfacial coupling, while component B is more likely related to a phonon-assisted branch or replica of a dark-state-related excitation. The present method provides an effective optical approach for suppressing defect background, enhancing weak excitonic channels, and performing preliminary spectroscopic identification of dark-state-related emission and exciton complexes in nonideal two-dimensional semiconductors.