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中国物理学会期刊

表面有限能隙的拓扑绝缘体薄层结构Imbert-Fedorov位移

Imbert-Fedorov Shifts of Topological Insulator Slab with Finite Surface Energy Gap

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  • 光自旋霍尔效应体现为Imbert-Fedorov(IF)横向位移,本文研究了该横向位移在具有有限的表面能隙的拓扑绝缘体层状结构中的特性,讨论了表面能隙、表面磁化以及入射极化态和结构厚度等因素对位移的影响。通过调控表面能隙可得到显著增强的IF位移极值。在拓扑绝缘体表面平行磁化的情况下,拓扑磁电极化率对IF位移极值的增强作用更为显著,位移极值对应的表面能隙在拓扑磁电极化率增大时向更窄的能隙值移动。在入射极化态与层厚度对位移的综合影响中发现,位移随厚度起伏的条纹峰值在极化角变化过程中会呈现偏移,在两种表面磁化情况中该偏移的方向相反。本文研究结果为基于拓扑材料光束横向位移的新型高性能光学元器件以及高灵敏测量提供了新思路。

    The Imbert-Fedorov (IF) transverse shift originates from the spin Hall effect of light, which corresponds to the interaction between the orbital angular momentum and spin/polarization state of the photon. In this work we systematically investigate the IF transverse shift in a topological insulator slab structure with finite surface energy gap. We report on a systematic investigation of how surface magnetization orientation, topological magnetoelectric polarizability, and slab thickness influence the IF shift in a topological insulator slab for different surface energy gaps and incident polarization states. The IF shift is found to exhibit a non-monotonic dependence on the surface energy gap, identifying this gap as a key parameter for achieving significant enhancement. Furthermore, the specific gap value at which this peak enhancement occurs is found to shift slightly with variations in the slab thickness. Under the parallel magnetization on topological insulator surfaces, the IF shifts are much more significantly enhanced by increasing topological magnetoelectric polarizability, and the surface energy gap corresponding to the peak value of the IF shift moves toward narrower gap as the topological magnetoelectric polarizability increases. The magnitude of the IF shift under TM-polarized incidence is generally larger than that under TE- and elliptically polarized states. Examination of the combined effects of incident polarization and layer thickness reveals that, for specific surface energy gaps the peak positions of its thickness-dependent oscillations may drift as the polarization angle varies, and the direction of this drift is opposite under two distinct surface magnetization configurations. This indicates that the IF shift can be enhanced and effectively controlled through judicious optimization of the topological insulator surface energy gap, magnetization direction, and thickness. This work offers practical significance for designing high-performance optical devices and highly sensitive measurement systems based on the transverse shifts in topological materials.

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