GeSe/Si thin-film heterojunction near-infrared photodetector with high stability and fast response enabled by microgap sublimation combined with self-sealed annealing

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QIN Hainan; DUAN Huimin; LI Jiaquan; HUANG Xiaopeng; MA Sheng; SUN Jin; JIANG Xiujin; LUO Ding; SUN Yiming; SONG Weidong

doi:10.7498/aps.75.20260168

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QIN Hainan, DUAN Huimin, LI Jiaquan, HUANG Xiaopeng, MA Sheng, SUN Jin, JIANG Xiujin, LUO Ding, SUN Yiming, SONG Weidong. GeSe/Si thin-film heterojunction near-infrared photodetector with high stability and fast response enabled by microgap sublimation combined with self-sealed annealing. Acta Physica Sinica, 2026, 75(13): 130805. DOI: 10.7498/aps.75.20260168

Citation:

QIN Hainan, DUAN Huimin, LI Jiaquan, HUANG Xiaopeng, MA Sheng, SUN Jin, JIANG Xiujin, LUO Ding, SUN Yiming, SONG Weidong. GeSe/Si thin-film heterojunction near-infrared photodetector with high stability and fast response enabled by microgap sublimation combined with self-sealed annealing. Acta Physica Sinica, 2026, 75(13): 130805. DOI: 10.7498/aps.75.20260168

Citation:

QIN Hainan, DUAN Huimin, LI Jiaquan, HUANG Xiaopeng, MA Sheng, SUN Jin, JIANG Xiujin, LUO Ding, SUN Yiming, SONG Weidong. GeSe/Si thin-film heterojunction near-infrared photodetector with high stability and fast response enabled by microgap sublimation combined with self-sealed annealing. Acta Physica Sinica, 2026, 75(13): 130805. DOI: 10.7498/aps.75.20260168