Geant4 simulation of Hg1–xCdxTe infrared focal plane array image sensor space proton displacement damage and total ionizing dose effects

Yang Wei-Tao; Wu Yi-Chen; Xu Rui-Ming; Shi Guang; Ning Ti; Wang Bin; Liu Huan; Guo Zhong-Jie; Yu Song-Lin; Wu Long-Sheng

doi:10.7498/aps.73.20241246

Abstract

A large-format, high-resolution Hg_1–xCd_xTe infrared focal plane array (IRFPA) image sensor can be used in aerospace remote sensing and high-precision satellite imaging. The next generation of meteorological satellites in China will all adopt this type of image sensor. However, space high-energy protons can cause displacement damage effects in Hg_1–xCd_xTe IRFPA detectors and induce total ionizing dose (TID) effects in the pixel unit metal-oxide-semiconductor (MOS) transistors. This study focuses on a 55nm manufacturing process Hg_1–xCd_xTe IRFPA sensor widely used in image sensors by using a 2 pixel×2 pixel basic pixel unit model for large-format arrays and constructing a Geant4 simulation model. Simulations are conducted for different proton irradiation fluences, including 10¹⁰, 10¹¹, 10¹² and 10¹³ cm^–2. The results show the displacement damage under various fluences, including non-ionizing energy loss and displacement atom distribution. It is found that at a proton cumulative fluence of 10¹³ cm^–2, in addition to considering the displacement damage effect in the Hg_1–xCd_xTe IRFPA sensor, attention must also be paid to the TID effects on the MOS transistors in the pixel units. Additionally, this study provides a preliminary assessment of the damage conditions in the space environment based on simulation results. This study provides crucial data for supporting the space applications of future large-format Hg_1–xCd_xTe IRFPA image sensors.

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Corresponding author: Yang Wei-Tao, yangweitao01@xidian.edu.cn ; Wu Long-Sheng, lswu@xidian.edu.cn

Funds: Project supported by the Natural Science Basic Research Plan in the Shaanxi Province of China (Grant No. 2023-JC-QN-0015) and the Fundamental Research Funds for the Central Universities, China (Grant No. XJSJ23049).

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仿真情况	入射质子注量/cm^–2	PKA种类数目
A	10¹⁰	27
B	10¹¹	36
C	10¹²	61
D	10¹³	159

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元素	反冲核及占比		比重
Te	占比>1%	Te130(16.44%), Te128(15.70%), Te126(9.56%), Te125(3.63%), Te124(2.47%), Te122(1.36%)	49.71%
Te	占比<1%	Te123, Te120, Te127, Te121, Te129, Te119, Te118	49.71%
Hg	占比>1%	Hg202(7.87%), Hg200(6.20%), Hg199(4.55%), Hg201(3.50%), Hg198(2.72%), Hg204(1.28%)	26.69%
Hg	占比<1%	Hg196, Hg197, Hg194, Hg192, Hg193, Hg191, Hg195, Hg190, Hg189	26.69%
Cd	占比>1%	Cd114(6.42%), Cd112(5.73%), Cd111(3.08%), Cd110(3.04%), Cd113(2.86%), Cd116(1.67%)	23.59%
Cd	占比<1%	Cd106, Cd108, Cd109, Cd104, Cd107, Cd105, Cd115, Cd124	23.59%
其他	He4, I126, I124, I123, I125, I128, In112, I127, I129, In111, Sb121, I122, I130, In113, Sb117, Sb119, Sb123, In108, Sb120, Sb122, Ag109, Au193, etc		0.01%

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仿真情况	模拟注量/cm^–2	像素单元MOS管电离总剂量/rad
A	10¹⁰	0
B	10¹¹	0
C	10¹²	0
D	10¹³	5301.95

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Vol. 73, Issue 23 - 2024-12-05

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