ZHANG Yifan; JIA Wenzhu; TIAN Gangyu; QU Qingyuan; WANG Dengzhi; CAO Xinmin; ZHOU Jian; SONG Yuanhong

doi:10.7498/aps.74.20250279

Abstract

Large-area capacitively coupled discharges are widely used in plasma enhanced chemical vapor deposition (PECVD) processes for solar cell and display manufacturing. With the increase of the chamber size and driving frequency for improving production efficiency, the non-uniformity of deposited film induced by standing wave effects becomes more serious, which deserves more attention and in-depth research. Based on a fluid model coupled with a transmission line model, the potential amplitude distribution on the powered 2 m² electrode and the plasma characteristics in a capacitive plasma sustained in a silane/hydrogen discharge driven at 27.12 MHz are investigated. This work identifies three key control parameters: pressure, silane content, and input power, with particular emphasis on radial wave attenuation caused by electron-neutral elastic collisions. The simulation results are validated by industrial experimental results, confirming the relationship between the distributions of potential amplitude on the powered electrode and the film thickness.Two different mechanisms emerge from the analysis. Under the conditions of low silane content and high power, the surface wave radial attenuation is not significant and the surface wave wavelength variations dominate the potential amplitude distribution on the powered electrode. Conversely, in the case of high silane content and low power, significant radial attenuation of the surface wave leads to the noticeable weakening of the standing wave effect due to higher electron-neutral collision frequency. Neglecting the radial attenuation of the surface wave will result in significant deviations in the potential amplitude distribution on the powered electrode as shown in the following figure.Strategies such as adjusting power input positions or using multiple power input are studied to improve uniformity, but the improvements are still limited. Although it requires strict parameter control and machining precision, the shaped electrode demonstrates remarkable uniformity improvement of the potential distribution. In the future work, it is necessary to further analyze the influence of the standing wave effects on the radial distributions of electron, ions, and neutral radicals under complex conditions, such as different chamber structures, gas flows, and temperature distributions, as well as the influence on the quality of deposited films. This will enable a more comprehensive and accurate study of standing wave effects, providing support and guidance for solving real industrial problems.

Keywords:

capacitive coupling discharge /
plasma enhanced chemical vapor deposition /
standing wave effect

Authors and contacts

Corresponding author: SONG Yuanhong, songyh@dlut.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 12020101005, 12475202).

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Cited By

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序号	反应	阈值能/eV	系数^[38,39] /(cm³·s^–1)
R1	SiH₄+e→SiH₄+e	—	cal
R2	SiH₄+e→$ {{\mathrm{S}}{\mathrm{i}}{\mathrm{H}}}_{3}^{+} $+H+2e	11.9	cal
R3	SiH₄+e→$ {{\mathrm{S}}{\mathrm{i}}{\mathrm{H}}}_{3}^{-} $+H	5.7	cal
R4	SiH₄+e→$ {{\mathrm{S}}{\mathrm{i}}{\mathrm{H}}}_{2}^{-} $+2H	5.7	cal
R5	SiH₄+e→SiH₃+H+e	8.3	cal
R6	SiH₄+e→SiH₂+2H+e	8.3	cal
R7	H₂+e→H₂+e	—	cal
R8	H₂+e→2H+e	8.9	cal
R9	H₂+e→$ {{\mathrm{H}}}_{2}^{+} $+2e	15.4	cal
R10	Si₂H₆+e→Si₂$ {{\mathrm{H}}}_{4}^{+} $+2H+2e	10.2	cal
R11	Si₂H₆+e→SiH₃+SiH₂+H+e	7.0	cal
R12	$ {{\mathrm{S}}{\mathrm{i}}{\mathrm{H}}}_{3}^{+} $+ $ {{\mathrm{S}}{\mathrm{i}}{\mathrm{H}}}_{3}^{-} $→2SiH₃	—	1.0×10^–8
R13	$ {{\mathrm{S}}{\mathrm{i}}{\mathrm{H}}}_{3}^{+} $+$ {{\mathrm{S}}{\mathrm{i}}{\mathrm{H}}}_{2}^{-} $→SiH₃+SiH₂	—	1.0×10^–8
R14	$ {{\mathrm{H}}}_{2}^{+} $+$ {{\mathrm{S}}{\mathrm{i}}{\mathrm{H}}}_{3}^{-} $→SiH₃+H₂	—	1.0×10^–8
R15	$ {{\mathrm{H}}}_{2}^{+} $+$ {{\mathrm{S}}{\mathrm{i}}{\mathrm{H}}}_{2}^{-} $→SiH₂+H₂	—	1.0×10^–8
R16	Si₂$ {{\mathrm{H}}}_{4}^{+} $+$ {{\mathrm{S}}{\mathrm{i}}{\mathrm{H}}}_{3}^{-} $→SiH₃+H₂	—	1.0×10^–8
R17	Si₂$ {{\mathrm{H}}}_{4}^{+} $+$ {{\mathrm{S}}{\mathrm{i}}{\mathrm{H}}}_{2}^{-} $→3SiH₂	—	1.0×10^–8
R18	SiH₄+$ {{\mathrm{H}}}_{2}^{+} $→$ {{\mathrm{S}}{\mathrm{i}}{\mathrm{H}}}_{3}^{+} $+H₂+H	—	1.0×10^–8
R19	SiH₄+H→SiH₃+H₂	—	1.2×10^–12
R20	Si₂H₆+H→H₂+Si₂H₅	—	7.0×10^–12
R21	Si₂H₆+H→SiH₃+SiH₄	—	3.5×10^–12
R22	SiH₃+SiH₃→SiH₄+SiH₂	—	1.5×10^–10
R23	SiH₂+H₂→SiH₄	—	2.7×10^–14
R24	SiH₂+SiH₄→Si₂H₆	—	2.3×10^–11

DownLoad: CSV

p/Torr	$ {n}_{{\mathrm{e}}} $/(10¹⁵ m^–3)	$ {d}_{{\mathrm{s}}{\mathrm{h}}} $/cm	$ \boldsymbol{\delta } $/cm	$ {\upsilon }_{{\mathrm{e}}{\mathrm{n}}} $/(10¹⁰Hz)	$ {\varepsilon }_{{\mathrm{e}}{\mathrm{f}}{\mathrm{f}}} $
1	5.98	0.20	6.88	0.36	4.02+0.46i
2	19.56	0.13	3.80	0.72	6.08+0.68i
3	37.57	0.08	2.74	1.08	9.30+1.29i
4	55.81	0.06	2.25	1.44	12.65+2.20i

DownLoad: CSV

p/Torr	$ {n}_{{\mathrm{e}}} $/(10¹⁵ m^–3)	$ {d}_{{\mathrm{s}}{\mathrm{h}}} $/cm	${\delta } $/cm	$ {\upsilon }_{{\mathrm{e}}{\mathrm{n}}} $/(10¹⁰ Hz)	$ {\varepsilon }_{{\mathrm{e}}{\mathrm{f}}{\mathrm{f}}} $
1	2.40	0.15	10.86	0.59	3.99+3.02i
3	7.72	0.10	6.06	1.77	4.33+4.53i
5	9.12	0.08	5.57	2.94	2.88+4.25i
7	8.70	0.08	5.70	4.12	1.94+3.18i

DownLoad: CSV

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Vol. 74, Issue 13 - 2025-07-05

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