Thickness-dependent interface potential barrier and charge tunneling probability in WS<sub>2</sub>/h-BN/MoS<sub>2</sub> heterostructures

Abstract views: {{if !(article.articleBusiness.viewCount && article.articleBusiness.viewCount != '')}}0{{/if}}
PDF Downloads: {{if !(article.articleBusiness.pdfDownCount && article.articleBusiness.pdfDownCount != '')}}0{{/if}}
Cited By: 0

TAN Xin; Chen Yongjie; LI Jing; DONG Jiansheng; TAN Jianing

doi:10.7498/aps.75.20251417

Search

x

TAN Xin, Chen Yongjie, LI Jing, DONG Jiansheng, TAN Jianing. Thickness-dependent interface potential barrier and charge tunneling probability in WS2/h-BN/MoS2 heterostructuresJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251417

Citation:

TAN Xin, Chen Yongjie, LI Jing, DONG Jiansheng, TAN Jianing. Thickness-dependent interface potential barrier and charge tunneling probability in WS2/h-BN/MoS2 heterostructuresJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251417

Citation:

TAN Xin, Chen Yongjie, LI Jing, DONG Jiansheng, TAN Jianing. Thickness-dependent interface potential barrier and charge tunneling probability in WS2/h-BN/MoS2 heterostructuresJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251417