Electrical Properties of Low Background Concentration HgCdTe for Fully Depleted Structure

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SHEN Chuan; ZHANG Juan; ZHOU Meihua; WANG Ying; BU Shundong; CHEN Lu; HE Li

doi:10.7498/aps.75.20251437

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SHEN Chuan, ZHANG Juan, ZHOU Meihua, WANG Ying, BU Shundong, CHEN Lu, HE Li. Electrical Properties of Low Background Concentration HgCdTe for Fully Depleted StructureJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251437

Citation:

SHEN Chuan, ZHANG Juan, ZHOU Meihua, WANG Ying, BU Shundong, CHEN Lu, HE Li. Electrical Properties of Low Background Concentration HgCdTe for Fully Depleted StructureJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251437

Citation:

SHEN Chuan, ZHANG Juan, ZHOU Meihua, WANG Ying, BU Shundong, CHEN Lu, HE Li. Electrical Properties of Low Background Concentration HgCdTe for Fully Depleted StructureJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251437