Study on the Antisymmetric Magnetoresistance Mechanism of Fe3GaTe2/Fe3GeTe2 Heterojunction

Abstract views: {{if !(article.articleBusiness.viewCount && article.articleBusiness.viewCount != '')}}0{{/if}}
PDF Downloads: {{if !(article.articleBusiness.pdfDownCount && article.articleBusiness.pdfDownCount != '')}}0{{/if}}
Cited By: 0

SUN Ziqing; LI Zhiyue; WANG Le; ZHANG Chonglei; Chen Tingyong

doi:10.7498/aps.75.20251500

Search

x

SUN Ziqing, LI Zhiyue, WANG Le, ZHANG Chonglei, Chen Tingyong. Study on the Antisymmetric Magnetoresistance Mechanism of Fe3GaTe2/Fe3GeTe2 HeterojunctionJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251500

Citation:

SUN Ziqing, LI Zhiyue, WANG Le, ZHANG Chonglei, Chen Tingyong. Study on the Antisymmetric Magnetoresistance Mechanism of Fe3GaTe2/Fe3GeTe2 HeterojunctionJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251500

Citation:

SUN Ziqing, LI Zhiyue, WANG Le, ZHANG Chonglei, Chen Tingyong. Study on the Antisymmetric Magnetoresistance Mechanism of Fe3GaTe2/Fe3GeTe2 HeterojunctionJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251500