Study on Heavy Ion Irradiation Effects in Low-Voltage p-GaN HEMT Transistors

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YANG Fukang; ZHU Jianggen; WU Keping; LIU Wenzheng; GAO Huan; ZHOU Chunhua; ZHANG Bo; ZHOU Qi

doi:10.7498/aps.75.20251571

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YANG Fukang, ZHU Jianggen, WU Keping, LIU Wenzheng, GAO Huan, ZHOU Chunhua, ZHANG Bo, ZHOU Qi. Study on Heavy Ion Irradiation Effects in Low-Voltage p-GaN HEMT TransistorsJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251571

Citation:

YANG Fukang, ZHU Jianggen, WU Keping, LIU Wenzheng, GAO Huan, ZHOU Chunhua, ZHANG Bo, ZHOU Qi. Study on Heavy Ion Irradiation Effects in Low-Voltage p-GaN HEMT TransistorsJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251571

Citation:

YANG Fukang, ZHU Jianggen, WU Keping, LIU Wenzheng, GAO Huan, ZHOU Chunhua, ZHANG Bo, ZHOU Qi. Study on Heavy Ion Irradiation Effects in Low-Voltage p-GaN HEMT TransistorsJ. Acta Physica Sinica. DOI: 10.7498/aps.75.20251571