Acta Physica Sinica
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1000-3290
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.561
Author(s): ZHANG YU-HENG, GAO YI-PING <br/><p>The real relation between average voltage across a two junctions SQUID and applied magnetic field have been derived. The calculations have been carried out on the variations of the instantaneous voltage with time in a given magnetic field. It is also shown theoretically that the V(t) relation is not periodical, and the V(t) amplitude is not constant.Finally, a physical interpretation about the instantaneous voltage process is given.</p> <br/>Acta Physica Sinica. 1986 35(5): 561-569. Published 2005-07-14
Author(s): ZHANG YU-HENG, GAO YI-PING <br/><p>The real relation between average voltage across a two junctions SQUID and applied magnetic field have been derived. The calculations have been carried out on the variations of the instantaneous voltage with time in a given magnetic field. It is also shown theoretically that the V(t) relation is not periodical, and the V(t) amplitude is not constant.Finally, a physical interpretation about the instantaneous voltage process is given.</p> <br/>Acta Physica Sinica. 1986 35(5): 561-569. Published 2005-07-14
THE V-H AND V-t RELATIONS FOR THE SQUID WITH DOUBLE JUNCTION
ZHANG YU-HENG, GAO YI-PING
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 561-569.
article
doi:10.7498/aps.35.561
10.7498/aps.35.561
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.561
561-569
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.570
Author(s): CAI XUE-YU, LI CHAN-YI, ZHANG JIN-LONG, YIN DAO-LE <br/><p>This paper presents a synthetical experimental research about the mechanisms of high-field Jc and alloying additives on Nh3Sn diffusion films.</p> <br/>Acta Physica Sinica. 1986 35(5): 570-576. Published 2005-07-14
Author(s): CAI XUE-YU, LI CHAN-YI, ZHANG JIN-LONG, YIN DAO-LE <br/><p>This paper presents a synthetical experimental research about the mechanisms of high-field Jc and alloying additives on Nh3Sn diffusion films.</p> <br/>Acta Physica Sinica. 1986 35(5): 570-576. Published 2005-07-14
A STUDY OF Nb3Sn DIFFUSION FILMS
CAI XUE-YU, LI CHAN-YI, ZHANG JIN-LONG, YIN DAO-LE
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 570-576.
article
doi:10.7498/aps.35.570
10.7498/aps.35.570
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.570
570-576
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.577
Author(s): QIN ZHI-CHENG, HE SHOU-AN, LIU ZHEN-XING, WANG WENG-KUI <br/><p>In this paper, we report the synthesis of a new metastable superconducting phase formed during the process of the crystallization of amorphous La72Si28 alloy. As starting material, the La72Si28 amorphous ribbons were prepared from melt by rapid quenching method. The new metastable phase appeared when the amorphous sample was treated at 250℃ for 30 minutes. This phase has a ortborhombic structure with lattice parameters α=9.12l?, b=6.821? and c=3.833?, and exhibits superconducting transition at Tc =3.02 K which is higher than those of all the known La-Si phases.</p> <br/>Acta Physica Sinica. 1986 35(5): 577-582. Published 2005-07-14
Author(s): QIN ZHI-CHENG, HE SHOU-AN, LIU ZHEN-XING, WANG WENG-KUI <br/><p>In this paper, we report the synthesis of a new metastable superconducting phase formed during the process of the crystallization of amorphous La72Si28 alloy. As starting material, the La72Si28 amorphous ribbons were prepared from melt by rapid quenching method. The new metastable phase appeared when the amorphous sample was treated at 250℃ for 30 minutes. This phase has a ortborhombic structure with lattice parameters α=9.12l?, b=6.821? and c=3.833?, and exhibits superconducting transition at Tc =3.02 K which is higher than those of all the known La-Si phases.</p> <br/>Acta Physica Sinica. 1986 35(5): 577-582. Published 2005-07-14
NEW METASTABLE SUPERCONDUCTING PHASE FORMED DURING PROCESS OF CRYSTALLIZATION IN La72Si28 AMORPHOUS ALLOY
QIN ZHI-CHENG, HE SHOU-AN, LIU ZHEN-XING, WANG WENG-KUI
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 577-582.
article
doi:10.7498/aps.35.577
10.7498/aps.35.577
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.577
577-582
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.583
Author(s): ZHAN WEN-SHAN, SHEN BAO-GEN, ZHAO JIAN-GAO, CHEN JIN-CHANG <br/><p>Temperature dependence of the electrical resistivity of Fe100-xBx,Fe87-xSixB13,(Fe1-xCox)78Si9.5B12.5,(Fe1-xMx)80-84B16-20(M = Zr, V, Nb, Ta, Cr, Mo, W, Mn) amorphous alloys in the range of 4.2-300 K has been studied in this work. The experimental results demonstrated that the resistivity minima phenomena appear in all these samples. The temperature of resistivity minim Tmin increases with increaing Si or B content in the amorphous FeB and FeSiB alloys. It has been shown that as transition metal elements on the right of Fe in the periodic table are added to the Febased amorphous alloys, lower Tmin are observed, and on the other hand, as transition elements on the left of Fe are added, Tmin are shift to higher temperatures. The dependence of the added elements on Tmin of the Febased amorphous alloys shows clear regularities. Below temperature Tmin, their resistivty can be described by alogarithmic temperature dependence and a discussion of this phenomenon is given in terms of the Kondo-like scattering. Above Tmin, a T2 temperature dependence of resistivity can be explained by extended Zi-man theory for FeB, FeSiB and FeCoSiB amorphous alloys and may be originated from both, electron-phonon and localized spin-fluctuation scattering for the Fe-based amorphous alloys with addition of transition elements on the left of Fe.</p> <br/>Acta Physica Sinica. 1986 35(5): 583-589. Published 2005-07-14
Author(s): ZHAN WEN-SHAN, SHEN BAO-GEN, ZHAO JIAN-GAO, CHEN JIN-CHANG <br/><p>Temperature dependence of the electrical resistivity of Fe100-xBx,Fe87-xSixB13,(Fe1-xCox)78Si9.5B12.5,(Fe1-xMx)80-84B16-20(M = Zr, V, Nb, Ta, Cr, Mo, W, Mn) amorphous alloys in the range of 4.2-300 K has been studied in this work. The experimental results demonstrated that the resistivity minima phenomena appear in all these samples. The temperature of resistivity minim Tmin increases with increaing Si or B content in the amorphous FeB and FeSiB alloys. It has been shown that as transition metal elements on the right of Fe in the periodic table are added to the Febased amorphous alloys, lower Tmin are observed, and on the other hand, as transition elements on the left of Fe are added, Tmin are shift to higher temperatures. The dependence of the added elements on Tmin of the Febased amorphous alloys shows clear regularities. Below temperature Tmin, their resistivty can be described by alogarithmic temperature dependence and a discussion of this phenomenon is given in terms of the Kondo-like scattering. Above Tmin, a T2 temperature dependence of resistivity can be explained by extended Zi-man theory for FeB, FeSiB and FeCoSiB amorphous alloys and may be originated from both, electron-phonon and localized spin-fluctuation scattering for the Fe-based amorphous alloys with addition of transition elements on the left of Fe.</p> <br/>Acta Physica Sinica. 1986 35(5): 583-589. Published 2005-07-14
ELECTRICAL RESISTIVITY STUDY OF THE Fe-BASED AMORPHOUS ALLOYS
ZHAN WEN-SHAN, SHEN BAO-GEN, ZHAO JIAN-GAO, CHEN JIN-CHANG
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 583-589.
article
doi:10.7498/aps.35.583
10.7498/aps.35.583
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.583
583-589
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.590
Author(s): GU GUO-LIANG, TAO RUI-BAO <br/><p>The cause of some accidental degeneracy in the molecular vibrations is discussed. We pointout that the accidental degeneracy would become a natural one under an extended " exchangepoint group". A method for treating such non-unitary symmetry is also suggested.</p> <br/>Acta Physica Sinica. 1986 35(5): 590-597. Published 2005-07-14
Author(s): GU GUO-LIANG, TAO RUI-BAO <br/><p>The cause of some accidental degeneracy in the molecular vibrations is discussed. We pointout that the accidental degeneracy would become a natural one under an extended " exchangepoint group". A method for treating such non-unitary symmetry is also suggested.</p> <br/>Acta Physica Sinica. 1986 35(5): 590-597. Published 2005-07-14
THE EXCHANGE SYMMETRY IN THE MOLECULAR VIBRATIONS
GU GUO-LIANG, TAO RUI-BAO
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 590-597.
article
doi:10.7498/aps.35.590
10.7498/aps.35.590
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.590
590-597
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.598
Author(s): FEN WEI-GUO, SUN XIN <br/><p>On the basis of the correlated wave function theory, we have solved the real space integral equation for the pair correlation function, and obtained the pair correlation function, correlation energy and many-body wave function for the metals Al (rs=2.07) and Cs (rs=5.65). This work improves on the imperfections of other many-body theories. The pair correlation functions obtained in this paper are positive definite and satisfy the normalization condition.</p> <br/>Acta Physica Sinica. 1986 35(5): 598-604. Published 2005-07-14
Author(s): FEN WEI-GUO, SUN XIN <br/><p>On the basis of the correlated wave function theory, we have solved the real space integral equation for the pair correlation function, and obtained the pair correlation function, correlation energy and many-body wave function for the metals Al (rs=2.07) and Cs (rs=5.65). This work improves on the imperfections of other many-body theories. The pair correlation functions obtained in this paper are positive definite and satisfy the normalization condition.</p> <br/>Acta Physica Sinica. 1986 35(5): 598-604. Published 2005-07-14
THE REAL SPACE CALCULATION FOR THE CORRELATION FUNCTION OF METALLIC ELECTRONS
FEN WEI-GUO, SUN XIN
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 598-604.
article
doi:10.7498/aps.35.598
10.7498/aps.35.598
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.598
598-604
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.605
Author(s): WANG HONG, XU YU-HUAN <br/><p>A DPT ferroelectric ceramics system of (Ba1-xLax)(Ti1-yZry)O3 and a DPT-SPT ferroelectric crystal serise of K0.2Na0.2(SrpBa1-p)0.8Nb2O6 have beenprepared by the ordinary ceramics manufacture technique and Czochralski technique respectively. The curves of dielectric constant vs. temperature of all samples have been measured. The semi-quantitive point-analyses of composition distribution have been obtained by the technique of SBM and EDAX. The inhomogeneity of composition distribution was discovered in both DPT ceramicses and DPT single crystal, but in SPT crystal no such fluctuation was found. It was shown that the diffuse curves of ε(T) is related to composition fluctuation directly. Therefore the Smolensky's composition fluctuation model for DPT was proved in experiment. According to this model, there is a statistical distribution of transition temperature, inside the DPT ferroelectrics. The theoretical calculation of dielectric constant with the change of temperature of all samples were done by using two different expressions of ε′(T, Tc). The theoretical results agree well with experimental curves.</p> <br/>Acta Physica Sinica. 1986 35(5): 605-614. Published 2005-07-14
Author(s): WANG HONG, XU YU-HUAN <br/><p>A DPT ferroelectric ceramics system of (Ba1-xLax)(Ti1-yZry)O3 and a DPT-SPT ferroelectric crystal serise of K0.2Na0.2(SrpBa1-p)0.8Nb2O6 have beenprepared by the ordinary ceramics manufacture technique and Czochralski technique respectively. The curves of dielectric constant vs. temperature of all samples have been measured. The semi-quantitive point-analyses of composition distribution have been obtained by the technique of SBM and EDAX. The inhomogeneity of composition distribution was discovered in both DPT ceramicses and DPT single crystal, but in SPT crystal no such fluctuation was found. It was shown that the diffuse curves of ε(T) is related to composition fluctuation directly. Therefore the Smolensky's composition fluctuation model for DPT was proved in experiment. According to this model, there is a statistical distribution of transition temperature, inside the DPT ferroelectrics. The theoretical calculation of dielectric constant with the change of temperature of all samples were done by using two different expressions of ε′(T, Tc). The theoretical results agree well with experimental curves.</p> <br/>Acta Physica Sinica. 1986 35(5): 605-614. Published 2005-07-14
THE EXPERIMENT AND STATISTICAL MODEL OF FERRO-PARAELECTRIC DIFFUSE PHASE TRANSITION
WANG HONG, XU YU-HUAN
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 605-614.
article
doi:10.7498/aps.35.605
10.7498/aps.35.605
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.605
605-614
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.615
Author(s): LIU QIANG, WANG KE-LIN <br/><p>The scalar field theory at finite temperature of real time suggested by Nieme and Semenoff is extended to the ease of gauge field. It is useful in finite temperature QCD in Minkowski space. With the propagator of finite temperature QCD introduced in this paper, the two-loop correction of free energy of high temperature QCD is calculated and the result is consistent with that obtained by Kapusta with the method of Euclidean field theory.</p> <br/>Acta Physica Sinica. 1986 35(5): 615-622. Published 2005-07-14
Author(s): LIU QIANG, WANG KE-LIN <br/><p>The scalar field theory at finite temperature of real time suggested by Nieme and Semenoff is extended to the ease of gauge field. It is useful in finite temperature QCD in Minkowski space. With the propagator of finite temperature QCD introduced in this paper, the two-loop correction of free energy of high temperature QCD is calculated and the result is consistent with that obtained by Kapusta with the method of Euclidean field theory.</p> <br/>Acta Physica Sinica. 1986 35(5): 615-622. Published 2005-07-14
A DISCUSSION ON FINITE-TEMPERATURE QCD IN MINKOWSKI SPACE
LIU QIANG, WANG KE-LIN
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 615-622.
article
doi:10.7498/aps.35.615
10.7498/aps.35.615
Acta Physica Sinica
35
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2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.615
615-622
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.623
Author(s): NAN CE-WEN <br/><p>Based on microstrueture image of typical nonliear ZnO ceramics (ZnO varistors), an intuitive and simple physical model of conduction has been proposed, that can quantitatively discribe the characteristics of ZaO varistors. According to this mode], in low bias voltage, electrons pass through SIS heterojunction and SS homojuction (in parallel) mainly by thernionic emission. Above breakdown voltage, SS homojuction is active juction of conduction. In this case, the reverse-biased barrier layer is transformed from depletion layer to strong inversion layer. The thickness of barrier top becomes thinner, and tunnelling electron flux rises sharply. Hence the nonliear conduction is produced. In high bias voltage, conduction is limited by grain resistivity.</p> <br/>Acta Physica Sinica. 1986 35(5): 623-632. Published 2005-07-14
Author(s): NAN CE-WEN <br/><p>Based on microstrueture image of typical nonliear ZnO ceramics (ZnO varistors), an intuitive and simple physical model of conduction has been proposed, that can quantitatively discribe the characteristics of ZaO varistors. According to this mode], in low bias voltage, electrons pass through SIS heterojunction and SS homojuction (in parallel) mainly by thernionic emission. Above breakdown voltage, SS homojuction is active juction of conduction. In this case, the reverse-biased barrier layer is transformed from depletion layer to strong inversion layer. The thickness of barrier top becomes thinner, and tunnelling electron flux rises sharply. Hence the nonliear conduction is produced. In high bias voltage, conduction is limited by grain resistivity.</p> <br/>Acta Physica Sinica. 1986 35(5): 623-632. Published 2005-07-14
THEORY OF CONDUCTION OF NONLINEAR ZnO CERAMICS (I)——THEORY OF MODEL OF CONDUCTION
NAN CE-WEN
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 623-632.
article
doi:10.7498/aps.35.623
10.7498/aps.35.623
Acta Physica Sinica
35
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2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.623
623-632
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.633
Author(s): NAN CE-WEN <br/><p>The model of conduction proposed in the previous paper is treated quantitatively. This model is suitable for the explanation of V-I curve, C-V(DG) curve, and degradation phenomena of ZnO varistors. In addition, this model can also predict the influence of the microstrueture parameter and the elec trical characteristics parameter of grain-grain contact on the electrical characteristics of ZnO varistors. It provides a basis of the theory for materials design of ZnO varistors.</p> <br/>Acta Physica Sinica. 1986 35(5): 633-637. Published 2005-07-14
Author(s): NAN CE-WEN <br/><p>The model of conduction proposed in the previous paper is treated quantitatively. This model is suitable for the explanation of V-I curve, C-V(DG) curve, and degradation phenomena of ZnO varistors. In addition, this model can also predict the influence of the microstrueture parameter and the elec trical characteristics parameter of grain-grain contact on the electrical characteristics of ZnO varistors. It provides a basis of the theory for materials design of ZnO varistors.</p> <br/>Acta Physica Sinica. 1986 35(5): 633-637. Published 2005-07-14
THEORY OF CONDUCTION OF NONLINEAR ZnO CERAMICS (II)——APPLICATION OF MODEL OF CONDUCTION
NAN CE-WEN
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 633-637.
article
doi:10.7498/aps.35.633
10.7498/aps.35.633
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.633
633-637
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.638
Author(s): WU FENG-MEI, LAI QI-JI, SHEN BO, ZHOU GUO-QUAN <br/><p>The experiments were done using p+u junction irradiated with 12MeV electron. Pour electron traps were observed in Si layers: A-center E1(Ec -0.19 eV), the divaeancy E2 (Ec -0.24 eV), and E4 (Ec -0.44 eV), and E3 defect level (Ec- 0.37eV). Using DLTS method in conjuntion with the reverse recovery technique, annealing behavior of E1, E4 and E3 traps have been studied. The annealing temperature of the E3 defect is the highest (≈520℃). We get an activation energy for thermal annealing of 1.71 eV with a frequency factor of ~1.5×109s-1. The E3 and E4 defect levels are the principal recombination center that controls lifetime of minorities following irradiation. As the E2 and E4 defect level annealout, however, defect level E3 becomes the dominant recombination center.</p> <br/>Acta Physica Sinica. 1986 35(5): 638-642. Published 2005-07-14
Author(s): WU FENG-MEI, LAI QI-JI, SHEN BO, ZHOU GUO-QUAN <br/><p>The experiments were done using p+u junction irradiated with 12MeV electron. Pour electron traps were observed in Si layers: A-center E1(Ec -0.19 eV), the divaeancy E2 (Ec -0.24 eV), and E4 (Ec -0.44 eV), and E3 defect level (Ec- 0.37eV). Using DLTS method in conjuntion with the reverse recovery technique, annealing behavior of E1, E4 and E3 traps have been studied. The annealing temperature of the E3 defect is the highest (≈520℃). We get an activation energy for thermal annealing of 1.71 eV with a frequency factor of ~1.5×109s-1. The E3 and E4 defect levels are the principal recombination center that controls lifetime of minorities following irradiation. As the E2 and E4 defect level annealout, however, defect level E3 becomes the dominant recombination center.</p> <br/>Acta Physica Sinica. 1986 35(5): 638-642. Published 2005-07-14
A STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN Si LAYERS
WU FENG-MEI, LAI QI-JI, SHEN BO, ZHOU GUO-QUAN
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 638-642.
article
doi:10.7498/aps.35.638
10.7498/aps.35.638
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.638
638-642
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.643
Author(s): CHENG ZHI-XU, CHENG YU-FEN, ZHANG PAN-LIN, YAN QI-WEI <br/><p>The crystal structure of the partly deuterized triglycine sulfate was studied by four-circle neutron diffractometer. The result is compared with TG-S data obtained by Kay et al. The distance between triglyeines groups increases hlightly by deuterization, The relative increases of lattice parameters a, b and c are 0.47%, 0.50%, 0.19%, respectively. The probability of deuterium substitution, P, on various hydrogen sites is obviously divided into two classes; P=0 for hydrogens locked in C-H bonds, while P= 0.84±0.03 for all the others.</p> <br/>Acta Physica Sinica. 1986 35(5): 643-652. Published 2005-07-14
Author(s): CHENG ZHI-XU, CHENG YU-FEN, ZHANG PAN-LIN, YAN QI-WEI <br/><p>The crystal structure of the partly deuterized triglycine sulfate was studied by four-circle neutron diffractometer. The result is compared with TG-S data obtained by Kay et al. The distance between triglyeines groups increases hlightly by deuterization, The relative increases of lattice parameters a, b and c are 0.47%, 0.50%, 0.19%, respectively. The probability of deuterium substitution, P, on various hydrogen sites is obviously divided into two classes; P=0 for hydrogens locked in C-H bonds, while P= 0.84±0.03 for all the others.</p> <br/>Acta Physica Sinica. 1986 35(5): 643-652. Published 2005-07-14
ATOMIC POSITIONS OF DEUTERIUM IN DTGS CRYSTAL DETERMINED BY NEUTRON DIFFRACTION
CHENG ZHI-XU, CHENG YU-FEN, ZHANG PAN-LIN, YAN QI-WEI
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 643-652.
article
doi:10.7498/aps.35.643
10.7498/aps.35.643
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.643
643-652
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.653
Author(s): ZHOU QIN <br/><p>The transmittance of a crystal can be expressed in terms of the photon's Green function (GF), solved by the equation of motion method for the GF and evaluated numerically. In the particular case of absorption of two phonons by an anharmonic crystal the formulae are derived for the, self energy of the photons and then for the transmittance of the crystal.</p> <br/>Acta Physica Sinica. 1986 35(5): 653-656. Published 2005-07-14
Author(s): ZHOU QIN <br/><p>The transmittance of a crystal can be expressed in terms of the photon's Green function (GF), solved by the equation of motion method for the GF and evaluated numerically. In the particular case of absorption of two phonons by an anharmonic crystal the formulae are derived for the, self energy of the photons and then for the transmittance of the crystal.</p> <br/>Acta Physica Sinica. 1986 35(5): 653-656. Published 2005-07-14
PHOTON GREEN FUNCTION FOR THE TRANSMITTANCE OF ANHARMONIC CRYSTAL
ZHOU QIN
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 653-656.
article
doi:10.7498/aps.35.653
10.7498/aps.35.653
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.653
653-656
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.657
Author(s): DAI SHOU-YU, SHEN BAO-GEN, WANG ZHONG-QUAN <br/><p>The magnetic properties of the spin glass La FeyNi5-y (0.5≤y≤1.1) are reported. The spin freezing temperatures, Tf, in these alloys have been measured. It is observed that at lower temperatures there is a transition from the paramagnetic (PM) to the ferromagnetic (FM) phase for y≤0.9 and the Fe-content dependence of the freezing temperature is approximately linear. There is a transition from the PM to the FM and from the FM to spin glass phase for y≥1.0.</p> <br/>Acta Physica Sinica. 1986 35(5): 657-661. Published 2005-07-14
Author(s): DAI SHOU-YU, SHEN BAO-GEN, WANG ZHONG-QUAN <br/><p>The magnetic properties of the spin glass La FeyNi5-y (0.5≤y≤1.1) are reported. The spin freezing temperatures, Tf, in these alloys have been measured. It is observed that at lower temperatures there is a transition from the paramagnetic (PM) to the ferromagnetic (FM) phase for y≤0.9 and the Fe-content dependence of the freezing temperature is approximately linear. There is a transition from the PM to the FM and from the FM to spin glass phase for y≥1.0.</p> <br/>Acta Physica Sinica. 1986 35(5): 657-661. Published 2005-07-14
MAGNETIC PROPERTIES OF THE SPIN GLASS LaFeyNi5-y
DAI SHOU-YU, SHEN BAO-GEN, WANG ZHONG-QUAN
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 657-661.
article
doi:10.7498/aps.35.657
10.7498/aps.35.657
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.657
657-661
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.662
Author(s): WU SHU-YAO, CHEN YUN-QI, QI SHANG-XUE, JIANG ZHAO-XUE, LIN ZHANG-DA, WANG ZHI-KUAN, SHU DAI-XUAN <br/><p>Shift and broadening of W4f peak were observed in the course of reduction of WO3 during Ar+- and H+-bombarding in different energies. Three different doublets W+6, W+4 and W0 corresponding to W4f electrons were obtained by decomposing the spectrum. The reduction is interpreted by defect states of oxygen. The UPS spectrum shows an increase of the density of states near the Fermi energy.</p> <br/>Acta Physica Sinica. 1986 35(5): 662-666. Published 2005-07-14
Author(s): WU SHU-YAO, CHEN YUN-QI, QI SHANG-XUE, JIANG ZHAO-XUE, LIN ZHANG-DA, WANG ZHI-KUAN, SHU DAI-XUAN <br/><p>Shift and broadening of W4f peak were observed in the course of reduction of WO3 during Ar+- and H+-bombarding in different energies. Three different doublets W+6, W+4 and W0 corresponding to W4f electrons were obtained by decomposing the spectrum. The reduction is interpreted by defect states of oxygen. The UPS spectrum shows an increase of the density of states near the Fermi energy.</p> <br/>Acta Physica Sinica. 1986 35(5): 662-666. Published 2005-07-14
DEFECTS OF OXYGEN ON WO3 SURFACE
WU SHU-YAO, CHEN YUN-QI, QI SHANG-XUE, JIANG ZHAO-XUE, LIN ZHANG-DA, WANG ZHI-KUAN, SHU DAI-XUAN
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 662-666.
article
doi:10.7498/aps.35.662
10.7498/aps.35.662
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.662
662-666
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.667
Author(s): FAN YONG-NIAN <br/><p>The segregation kinetics and surface structures of sulfur on the Mo(111) surface have been studied by means of AES and LEED in the temperature range between 700℃ and 800℃. When the sample was heated to 800℃, sulfur segregated rapidly and progressively replaced the carbon on the surface. However, as heated to 700℃, no significant sulfur segregation has been observed. An AES analysis also showed that sulfur segregation may be controlled by its bulk diffusion rate and the presence of carbon on the surface might inhibit the surface segregation of sulfur. LEED patterns of new surfacestructures, namely Mo(111) (31/2×31/2)R30°-S and Mo(lll) l/3(99-44)-Shave beenobserved respectively.</p> <br/>Acta Physica Sinica. 1986 35(5): 667-671. Published 2005-07-14
Author(s): FAN YONG-NIAN <br/><p>The segregation kinetics and surface structures of sulfur on the Mo(111) surface have been studied by means of AES and LEED in the temperature range between 700℃ and 800℃. When the sample was heated to 800℃, sulfur segregated rapidly and progressively replaced the carbon on the surface. However, as heated to 700℃, no significant sulfur segregation has been observed. An AES analysis also showed that sulfur segregation may be controlled by its bulk diffusion rate and the presence of carbon on the surface might inhibit the surface segregation of sulfur. LEED patterns of new surfacestructures, namely Mo(111) (31/2×31/2)R30°-S and Mo(lll) l/3(99-44)-Shave beenobserved respectively.</p> <br/>Acta Physica Sinica. 1986 35(5): 667-671. Published 2005-07-14
ORDERED STRUCTURE FORMED BY THE SEGREGATION OF SULFUR ON THE Mo(111) SURFACE
FAN YONG-NIAN
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 667-671.
article
doi:10.7498/aps.35.667
10.7498/aps.35.667
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.667
667-671
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.672
Author(s): FAN YONG-NIAN, YE HENG-QIANG <br/><p>After bombarding the Mo (111) surface with nitrogen ions of the energy of 1 keV and the beam current of 6 μA for 15 min, a very strong Auguer peak of nitrogen appeared in AES. The LEED observation showed that surface structure was disordered after annealing in the temperature range from room temperature to 450℃. The stable square pattern appeared at 562℃ can be interpreted in terms of c(3×1)-N, O overlayer structure on the Mo (433) faceting planes.</p> <br/>Acta Physica Sinica. 1986 35(5): 672-676. Published 2005-07-14
Author(s): FAN YONG-NIAN, YE HENG-QIANG <br/><p>After bombarding the Mo (111) surface with nitrogen ions of the energy of 1 keV and the beam current of 6 μA for 15 min, a very strong Auguer peak of nitrogen appeared in AES. The LEED observation showed that surface structure was disordered after annealing in the temperature range from room temperature to 450℃. The stable square pattern appeared at 562℃ can be interpreted in terms of c(3×1)-N, O overlayer structure on the Mo (433) faceting planes.</p> <br/>Acta Physica Sinica. 1986 35(5): 672-676. Published 2005-07-14
ORDERED STRUCTURE FORMED ON Mo(lll) SURFACE BY BOMBARDMENT OF NITROGEN IONS AND ANNEALING
FAN YONG-NIAN, YE HENG-QIANG
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 672-676.
article
doi:10.7498/aps.35.672
10.7498/aps.35.672
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.672
672-676
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.677
Author(s): PAN YU-YING, ZHENG JIAN-XUAN, LI MING, YANG HUA <br/><p>The Gd-Ni binary system has been reinvestigated by X-ray diffraction method and differential thermal analysis. The phase diagram has been determined. In this system, the following nine intermetallic compounds were found: Gd3Ni (decomposes at 735℃), Gd3Ni2 (decomposes at 690℃), GdNi (M. P. 1280℃) GdNi2 (decomposes at 1010℃), GdNi3(decomposes at 1110℃), Gd2Ni7(decomposes at 1200℃), GdNi4(decomposes at 1270℃), GdNi5(M. P. 1480℃) and Gd2Ni17(decomposes at 1285 ℃). Three eutectics occur: Gd3Ni-Gd3Ni2(635℃, ~32 at% Ni), GdNi2-GdNi2(880℃ ~56 at% Ni) and Gd2Ni17-Ni(1275℃, ~95 at Ni). Neither Go in Ni nor Ni in Gd shows any detectable solid solubility.</p> <br/>Acta Physica Sinica. 1986 35(5): 677-680. Published 2005-07-14
Author(s): PAN YU-YING, ZHENG JIAN-XUAN, LI MING, YANG HUA <br/><p>The Gd-Ni binary system has been reinvestigated by X-ray diffraction method and differential thermal analysis. The phase diagram has been determined. In this system, the following nine intermetallic compounds were found: Gd3Ni (decomposes at 735℃), Gd3Ni2 (decomposes at 690℃), GdNi (M. P. 1280℃) GdNi2 (decomposes at 1010℃), GdNi3(decomposes at 1110℃), Gd2Ni7(decomposes at 1200℃), GdNi4(decomposes at 1270℃), GdNi5(M. P. 1480℃) and Gd2Ni17(decomposes at 1285 ℃). Three eutectics occur: Gd3Ni-Gd3Ni2(635℃, ~32 at% Ni), GdNi2-GdNi2(880℃ ~56 at% Ni) and Gd2Ni17-Ni(1275℃, ~95 at Ni). Neither Go in Ni nor Ni in Gd shows any detectable solid solubility.</p> <br/>Acta Physica Sinica. 1986 35(5): 677-680. Published 2005-07-14
A PHASE DIAGRAM OF THE ALLOYS OF THE Gd-Ni BINARY SYSTEM
PAN YU-YING, ZHENG JIAN-XUAN, LI MING, YANG HUA
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 677-680.
article
doi:10.7498/aps.35.677
10.7498/aps.35.677
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.677
677-680
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.681
Author(s): WEI GUO-ZHU, CHEN LING-FU <br/><p>In this paper, the RKKY interaction formula of 2-dimensional magnetic alloy is derived by using the Green's function method. The result for large 2kfRji is in analogy to results of 1-dimensional and 3-dimensional magnetic alloy. Based on RKKY interaction formula, the RKKY Coupling resitivity of 2-dimensional magnetic alloy is calculated, it is divergent as T-1 at low temperatures. The T-1 divergencl can be removed by means of the ring approximation.</p> <br/>Acta Physica Sinica. 1986 35(5): 681-686. Published 2005-07-14
Author(s): WEI GUO-ZHU, CHEN LING-FU <br/><p>In this paper, the RKKY interaction formula of 2-dimensional magnetic alloy is derived by using the Green's function method. The result for large 2kfRji is in analogy to results of 1-dimensional and 3-dimensional magnetic alloy. Based on RKKY interaction formula, the RKKY Coupling resitivity of 2-dimensional magnetic alloy is calculated, it is divergent as T-1 at low temperatures. The T-1 divergencl can be removed by means of the ring approximation.</p> <br/>Acta Physica Sinica. 1986 35(5): 681-686. Published 2005-07-14
THE RKKY COUPLING RESISTIVITY OF 2-DIMENSIONAL MAGNETIC ALLOY
WEI GUO-ZHU, CHEN LING-FU
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 681-686.
article
doi:10.7498/aps.35.681
10.7498/aps.35.681
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.681
681-686
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.687
Author(s): FENG SHI-PING <br/><p>Under the BCS mechanism, we use Anderson model to explain CeCu2Si2 supereon-ductiv critical temperature change with pressure in low pressure range.</p> <br/>Acta Physica Sinica. 1986 35(5): 687-690. Published 2005-07-14
Author(s): FENG SHI-PING <br/><p>Under the BCS mechanism, we use Anderson model to explain CeCu2Si2 supereon-ductiv critical temperature change with pressure in low pressure range.</p> <br/>Acta Physica Sinica. 1986 35(5): 687-690. Published 2005-07-14
THEORETICAL EXPLANTION OF SUPERCONDUCTIV CRITICAL TEMPERATUARE CHANGES OF CeCu2Si2 WITH PRESSURE
FENG SHI-PING
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 687-690.
article
doi:10.7498/aps.35.687
10.7498/aps.35.687
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.687
687-690
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//m.getgobooth.com/en/article/doi/10.7498/aps.35.691
Author(s): WANG CHAO-YING, FU ZHENG-MIN, CHEN LI-QUAN <br/><p>The phase diagram of pseudo-binary system LiNaS04-MgSO4 system has been studied by means of DTA and X-ray diffraction technique. Three compounds (LiNa)0.8Mg0.20.8·Mg0.2 SO4 (LiNa)0.67Mg0.33 SO4 and (LiNa)0.4 Mg0.6 SO4 have been found in this system.The ionic conductions in these three compounds have been investigated. The ionic conductivities at 490℃ are 6.1×10-5S ·cm-1, 6.5×10-5S·cm-1 and 9.8×10-6S·cm-1 with activa tion energies 1.67 eV, 1.48 eV and 1.32 eV, respectively. The prototype high temperature thermal batteries Mg/MnO2 using these compounds respectively as electrolyte have been made and tested. The results show that, Mg/ (LiNa)0.8Mg0.2 SO4/MnO2 cell has better Polarization and discharg behaviour than the others. Hence (LiNa)0.8Mg0.2SO4 might be used as electrolyte in high temperature thermal battery.</p> <br/>Acta Physica Sinica. 1986 35(5): 691-696. Published 2005-07-14
Author(s): WANG CHAO-YING, FU ZHENG-MIN, CHEN LI-QUAN <br/><p>The phase diagram of pseudo-binary system LiNaS04-MgSO4 system has been studied by means of DTA and X-ray diffraction technique. Three compounds (LiNa)0.8Mg0.20.8·Mg0.2 SO4 (LiNa)0.67Mg0.33 SO4 and (LiNa)0.4 Mg0.6 SO4 have been found in this system.The ionic conductions in these three compounds have been investigated. The ionic conductivities at 490℃ are 6.1×10-5S ·cm-1, 6.5×10-5S·cm-1 and 9.8×10-6S·cm-1 with activa tion energies 1.67 eV, 1.48 eV and 1.32 eV, respectively. The prototype high temperature thermal batteries Mg/MnO2 using these compounds respectively as electrolyte have been made and tested. The results show that, Mg/ (LiNa)0.8Mg0.2 SO4/MnO2 cell has better Polarization and discharg behaviour than the others. Hence (LiNa)0.8Mg0.2SO4 might be used as electrolyte in high temperature thermal battery.</p> <br/>Acta Physica Sinica. 1986 35(5): 691-696. Published 2005-07-14
STUDY ON IONIC CONDUCTORS IN PSEUDO-BINARY SYSTEM LiNaSO4-MgS04
WANG CHAO-YING, FU ZHENG-MIN, CHEN LI-QUAN
2005-07-14
Personal use only, all commercial or other reuse prohibited
Acta Physica Sinica. 1986 35(5): 691-696.
article
doi:10.7498/aps.35.691
10.7498/aps.35.691
Acta Physica Sinica
35
5
2005-07-14
//m.getgobooth.com/en/article/doi/10.7498/aps.35.691
691-696