Acta Physica Sinica //m.getgobooth.com/ 必威体育下载 daily 15 2024-10-08 13:42:53 apsoffice@iphy.ac.cn apsoffice@iphy.ac.cn 2024-10-08 13:42:53 zh Copyright ©Acta Physica Sinica All Rights Reserved. 京ICP备05002789号-1 Address: PostCode:100190 Phone: 010-82649829,82649241,82649863 Email: apsoffice@iphy.ac.cn Copyright ©Acta Physica Sinica All Rights Reserved apsoffice@iphy.ac.cn 1000-3290 <![CDATA[THE ITERATION RESULT OF THE GROUND STATE ENERGY FOR A TWO DIMENSIONAL ELECTRON GAS IN THE NEUTRALIZING BACKGROUND]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.142 Author(s): XIONG XIAO-MING, ZHOU SHI-XUN <br/><p>We study the 2-D electron system in a strong magnetic field with the contribution from the meutralizing backgound included. We find that the downward cusp of the ground state energy only occurs for several angular momenta.</p> <br/>Acta Physica Sinica. 1987 36(10): 142-144. Published 1987-05-05 Author(s): XIONG XIAO-MING, ZHOU SHI-XUN <br/><p>We study the 2-D electron system in a strong magnetic field with the contribution from the meutralizing backgound included. We find that the downward cusp of the ground state energy only occurs for several angular momenta.</p> <br/>Acta Physica Sinica. 1987 36(10): 142-144. Published 1987-05-05 THE ITERATION RESULT OF THE GROUND STATE ENERGY FOR A TWO DIMENSIONAL ELECTRON GAS IN THE NEUTRALIZING BACKGROUND XIONG XIAO-MING, ZHOU SHI-XUN 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 142-144. article doi:10.7498/aps.36.142 10.7498/aps.36.142 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.142 142-144 <![CDATA[EVOLUTION OF NON-LINEAR TEARING MODES]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1241 Author(s): HUANG GUANG-LI <br/><p>With the local approximation near the rational surfaces, the analytical expressions of the evolution of non-linear tearing modes are derived from MHD equations; and are compared with the previous results for linear and non-linear tearing modes. The phenomenon of modulation and anomalous increase is explained, which was found in the experiments of the maor disruptions in Tokamaks.</p> <br/>Acta Physica Sinica. 1987 36(10): 1241-1246. Published 1987-05-05 Author(s): HUANG GUANG-LI <br/><p>With the local approximation near the rational surfaces, the analytical expressions of the evolution of non-linear tearing modes are derived from MHD equations; and are compared with the previous results for linear and non-linear tearing modes. The phenomenon of modulation and anomalous increase is explained, which was found in the experiments of the maor disruptions in Tokamaks.</p> <br/>Acta Physica Sinica. 1987 36(10): 1241-1246. Published 1987-05-05 EVOLUTION OF NON-LINEAR TEARING MODES HUANG GUANG-LI 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1241-1246. article doi:10.7498/aps.36.1241 10.7498/aps.36.1241 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1241 1241-1246 <![CDATA[A METHOD FOR DESIGNING BROADBAND COMPOSITE PULSES IN SOLIDS]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1247 Author(s): WU XIAO-LING, WU XUE-WEN, ZHANG SHAN-MIN <br/><p>A theory is presented for designing broadband composite pulses in solids by using perturbation method of quantum mechanics combining with coherent averaging theory. A broadband composite π pules Px(90°)Py(90°)Px(90°) is designed by this method. The experimental results that the pulse sequence is quite good.</p> <br/>Acta Physica Sinica. 1987 36(10): 1247-1254. Published 1987-05-05 Author(s): WU XIAO-LING, WU XUE-WEN, ZHANG SHAN-MIN <br/><p>A theory is presented for designing broadband composite pulses in solids by using perturbation method of quantum mechanics combining with coherent averaging theory. A broadband composite π pules Px(90°)Py(90°)Px(90°) is designed by this method. The experimental results that the pulse sequence is quite good.</p> <br/>Acta Physica Sinica. 1987 36(10): 1247-1254. Published 1987-05-05 A METHOD FOR DESIGNING BROADBAND COMPOSITE PULSES IN SOLIDS WU XIAO-LING, WU XUE-WEN, ZHANG SHAN-MIN 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1247-1254. article doi:10.7498/aps.36.1247 10.7498/aps.36.1247 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1247 1247-1254 <![CDATA[A STUDY ON VALENCE-BAND PHOTOEMISSION SPECTRA OF NOBLE METAL-GaAs(110) INTERFACES]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1255 Author(s): PAN SHI-HONG, MO DANG, K. K. CHYN, W. E. SPICER <br/><p>The evolution of valence hand photoemission spectra in the formation of noble metal-GaAs (110) interfaces has been studied with 21.2 eV and 40.8 eV photons. For less than 0.5 mono-layer of deposited metals, the so-called atomic-like Ag 5s and Au 6s states have been observed. A maximum in the emission of the valence band of noble metals has been observed in the range from about 10 ? to a few tens ? of deposited metals. The experiment results are discussed with the point of view of metal clustering associated with interfacial reaction.</p> <br/>Acta Physica Sinica. 1987 36(10): 1255-1263. Published 1987-05-05 Author(s): PAN SHI-HONG, MO DANG, K. K. CHYN, W. E. SPICER <br/><p>The evolution of valence hand photoemission spectra in the formation of noble metal-GaAs (110) interfaces has been studied with 21.2 eV and 40.8 eV photons. For less than 0.5 mono-layer of deposited metals, the so-called atomic-like Ag 5s and Au 6s states have been observed. A maximum in the emission of the valence band of noble metals has been observed in the range from about 10 ? to a few tens ? of deposited metals. The experiment results are discussed with the point of view of metal clustering associated with interfacial reaction.</p> <br/>Acta Physica Sinica. 1987 36(10): 1255-1263. Published 1987-05-05 A STUDY ON VALENCE-BAND PHOTOEMISSION SPECTRA OF NOBLE METAL-GaAs(110) INTERFACES PAN SHI-HONG, MO DANG, K. K. CHYN, W. E. SPICER 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1255-1263. article doi:10.7498/aps.36.1255 10.7498/aps.36.1255 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1255 1255-1263 <![CDATA[THE EFFECT OF DEEP LEVEL TRAP ON PHOTO-TRANSIENT CHARACTERISTICS, EQUIVALENT NOISE CURRENT AND INCREMENT OF DRAIN CURRENT FOR FET]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1264 Author(s): WANG DE-NING, SHEN PENG-NIAN, WANG WEI-YUAN <br/><p>In this paper, based on the differential equations of Change rate of hole concentration for deep acceptor trap and excess hole located below quasi-Fermi level under equilibrium or non-equilibrium state (with light illumination), an exponential attenuation equation has been deduced. It is capable of explaining the effect of deep level trap on photo-pulse transient characteristics, satisfactorily. We indicate chat the deep trap is the primary cause of producing the long tail of attenuation curve. The photo-pulse transient characteristic curves of GaAs MESFET, GaAl-As TEGFET and Si JFET were measured. The experimental results could check the exactness of the theory. The effect of deep level depth ET, concentration NT and so on attenuation curves has also been discussed. The dependence of equivalent noise voltage Eeq on frequence for the above three devices were measured. The relations between equivalent noise current Ieq and f, and between Ieq and effect deep level concentration NT,eff were obtained using the equations in ref. (6). In this way, the effect of deep level trap on noise may be obtained. The relation between △NT,eff and drift of drain current △ID could be calculated. They were in well agreement with the experimental results. Hence, the increase of △ID also results from the deep level trap.</p> <br/>Acta Physica Sinica. 1987 36(10): 1264-1272. Published 1987-05-05 Author(s): WANG DE-NING, SHEN PENG-NIAN, WANG WEI-YUAN <br/><p>In this paper, based on the differential equations of Change rate of hole concentration for deep acceptor trap and excess hole located below quasi-Fermi level under equilibrium or non-equilibrium state (with light illumination), an exponential attenuation equation has been deduced. It is capable of explaining the effect of deep level trap on photo-pulse transient characteristics, satisfactorily. We indicate chat the deep trap is the primary cause of producing the long tail of attenuation curve. The photo-pulse transient characteristic curves of GaAs MESFET, GaAl-As TEGFET and Si JFET were measured. The experimental results could check the exactness of the theory. The effect of deep level depth ET, concentration NT and so on attenuation curves has also been discussed. The dependence of equivalent noise voltage Eeq on frequence for the above three devices were measured. The relations between equivalent noise current Ieq and f, and between Ieq and effect deep level concentration NT,eff were obtained using the equations in ref. (6). In this way, the effect of deep level trap on noise may be obtained. The relation between △NT,eff and drift of drain current △ID could be calculated. They were in well agreement with the experimental results. Hence, the increase of △ID also results from the deep level trap.</p> <br/>Acta Physica Sinica. 1987 36(10): 1264-1272. Published 1987-05-05 THE EFFECT OF DEEP LEVEL TRAP ON PHOTO-TRANSIENT CHARACTERISTICS, EQUIVALENT NOISE CURRENT AND INCREMENT OF DRAIN CURRENT FOR FET WANG DE-NING, SHEN PENG-NIAN, WANG WEI-YUAN 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1264-1272. article doi:10.7498/aps.36.1264 10.7498/aps.36.1264 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1264 1264-1272 <![CDATA[SURFACE PLASMONS IN QUASIPERIODIC SEMICONDUCTOR SUPERLATTICE]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1273 Author(s): QIN GUO-YI, WANG YONG-SHENG <br/><p>Based on a model a little bit complicated than that in ref. [2] , the mathematical method of ref. [1] was used to yield an universal condition of dispersion. By means of this condition, the surface plasmon spectra of the quasiperiodic semiconductor superlattice of type-I, type-II and II-VI compounds were discussed.The results show that bacause of the break of reflection symmetry in the plane perpendicular to the axis of the superlattice, when the surface is located at the Fm different interfaces of the primary cell, the spectrum of surface plasmon shows a great deal of patterns for each choice of sets of the parameters. (Fm is the Fibonacci number).</p> <br/>Acta Physica Sinica. 1987 36(10): 1273-1280. Published 1987-05-05 Author(s): QIN GUO-YI, WANG YONG-SHENG <br/><p>Based on a model a little bit complicated than that in ref. [2] , the mathematical method of ref. [1] was used to yield an universal condition of dispersion. By means of this condition, the surface plasmon spectra of the quasiperiodic semiconductor superlattice of type-I, type-II and II-VI compounds were discussed.The results show that bacause of the break of reflection symmetry in the plane perpendicular to the axis of the superlattice, when the surface is located at the Fm different interfaces of the primary cell, the spectrum of surface plasmon shows a great deal of patterns for each choice of sets of the parameters. (Fm is the Fibonacci number).</p> <br/>Acta Physica Sinica. 1987 36(10): 1273-1280. Published 1987-05-05 SURFACE PLASMONS IN QUASIPERIODIC SEMICONDUCTOR SUPERLATTICE QIN GUO-YI, WANG YONG-SHENG 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1273-1280. article doi:10.7498/aps.36.1273 10.7498/aps.36.1273 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1273 1273-1280 <![CDATA[MAGNETORESISTANCE AND MAGNETIC BREAKDOWN PHENOMENON IN AMORPHOUS MAGNETIC ALLOYS]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1281 Author(s): CHEN HUI-YU, GONG XIAO-YU <br/><p>Transverse magnetoresistance in amorphous magnetic alloys (Fe1-xCox)82Cu0.4Si4.4B13.2 were measured at room temperature and in the magnetic field range 0-15 kOe. For large magnetic field, three various functional dependences of magnetoresistance on magnetic field strength have been found as follows: (1) △ρ/ρ approaches saturation. (2) △ρ/ρ increases proportionally to H2. (3) For x = 0.15, sharp △ρ/ρ peak appears at certain magnetic field strenght in spectial angular orientation of both magnetic and electric current. The case (3) is a magnetic breakdown phenomenon. Magnetic breakdown occurs at the gap between the spin-up and spin-down sheets of the Fermi surface. This gap is the spin-orbit gap and its magnitude is a sensitive function of magnetization. Hence the magnitude and wide of the magnetoresistance peak and the magnetic field strength at the peak point are functions of angular orientation of both magnetic field and electric current.</p> <br/>Acta Physica Sinica. 1987 36(10): 1281-1288. Published 1987-05-05 Author(s): CHEN HUI-YU, GONG XIAO-YU <br/><p>Transverse magnetoresistance in amorphous magnetic alloys (Fe1-xCox)82Cu0.4Si4.4B13.2 were measured at room temperature and in the magnetic field range 0-15 kOe. For large magnetic field, three various functional dependences of magnetoresistance on magnetic field strength have been found as follows: (1) △ρ/ρ approaches saturation. (2) △ρ/ρ increases proportionally to H2. (3) For x = 0.15, sharp △ρ/ρ peak appears at certain magnetic field strenght in spectial angular orientation of both magnetic and electric current. The case (3) is a magnetic breakdown phenomenon. Magnetic breakdown occurs at the gap between the spin-up and spin-down sheets of the Fermi surface. This gap is the spin-orbit gap and its magnitude is a sensitive function of magnetization. Hence the magnitude and wide of the magnetoresistance peak and the magnetic field strength at the peak point are functions of angular orientation of both magnetic field and electric current.</p> <br/>Acta Physica Sinica. 1987 36(10): 1281-1288. Published 1987-05-05 MAGNETORESISTANCE AND MAGNETIC BREAKDOWN PHENOMENON IN AMORPHOUS MAGNETIC ALLOYS CHEN HUI-YU, GONG XIAO-YU 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1281-1288. article doi:10.7498/aps.36.1281 10.7498/aps.36.1281 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1281 1281-1288 <![CDATA[THE AGGREGATION EFFECT OF METAL IONS ON SILVER SOL AND THE FRACTAL STRUCTURE FORMED]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1289 Author(s): YU FENG-QI, ZHANG CHUN-PING, ZHANG GUANG-YIN <br/><p>We have studied the aggregation of silver sol by mixing silver sol with several kinds of ions. We found that it is very difficult for the monovalent metal ions to make silver sol aggregate. The metal ions of the second main group can make silver sol aggregate and form fractal state. With the radii of metal ions increase, their ability of aggregation increases accordingly. The metal ion of the third main group A13+ can also make silver sol aggregate and form fractal state. As for acid radical ions, they can not make silver sol aggregate directly, but they can influence the speed of the aggregation and final state of silver sol. The simple explanations of these phenomena were given. We also found that the speed of aggregation and final state of silver sol were determinded by the state of silver sol and the proportion of metal ions in silver sol.</p> <br/>Acta Physica Sinica. 1987 36(10): 1289-1304. Published 1987-05-05 Author(s): YU FENG-QI, ZHANG CHUN-PING, ZHANG GUANG-YIN <br/><p>We have studied the aggregation of silver sol by mixing silver sol with several kinds of ions. We found that it is very difficult for the monovalent metal ions to make silver sol aggregate. The metal ions of the second main group can make silver sol aggregate and form fractal state. With the radii of metal ions increase, their ability of aggregation increases accordingly. The metal ion of the third main group A13+ can also make silver sol aggregate and form fractal state. As for acid radical ions, they can not make silver sol aggregate directly, but they can influence the speed of the aggregation and final state of silver sol. The simple explanations of these phenomena were given. We also found that the speed of aggregation and final state of silver sol were determinded by the state of silver sol and the proportion of metal ions in silver sol.</p> <br/>Acta Physica Sinica. 1987 36(10): 1289-1304. Published 1987-05-05 THE AGGREGATION EFFECT OF METAL IONS ON SILVER SOL AND THE FRACTAL STRUCTURE FORMED YU FENG-QI, ZHANG CHUN-PING, ZHANG GUANG-YIN 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1289-1304. article doi:10.7498/aps.36.1289 10.7498/aps.36.1289 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1289 1289-1304 <![CDATA[A MICROSTRUCTURE PHYSICAL MODEL OF SENSITIVE SEMICONDUCTOR CERAMICS (Ⅰ)]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1305 Author(s): NAN CE-WEN <br/><p>Combining the improved effective-mediume theory (EMT) with the feature of sensitive semiconductor ceramics, we proposed a simple and quantitatively physical model that can be used to describe the relation between micros tructure feature and proprety of sensitive semiconductor ceramics. We used this model to describe the electrical propreties of nonlinear ZnO ceramics by, and found that the results of the model are consistent with experimental results and the results obtained by the quentum theory of semiconductor conduction.</p> <br/>Acta Physica Sinica. 1987 36(10): 1305-1312. Published 1987-05-05 Author(s): NAN CE-WEN <br/><p>Combining the improved effective-mediume theory (EMT) with the feature of sensitive semiconductor ceramics, we proposed a simple and quantitatively physical model that can be used to describe the relation between micros tructure feature and proprety of sensitive semiconductor ceramics. We used this model to describe the electrical propreties of nonlinear ZnO ceramics by, and found that the results of the model are consistent with experimental results and the results obtained by the quentum theory of semiconductor conduction.</p> <br/>Acta Physica Sinica. 1987 36(10): 1305-1312. Published 1987-05-05 A MICROSTRUCTURE PHYSICAL MODEL OF SENSITIVE SEMICONDUCTOR CERAMICS (Ⅰ) NAN CE-WEN 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1305-1312. article doi:10.7498/aps.36.1305 10.7498/aps.36.1305 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1305 1305-1312 <![CDATA[A MICROSTRUCTURE PHYSICAL MODEL OF SENSITIVE SEMICONDUCTOR CERAMICS (Ⅱ)]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1313 Author(s): NAN CE-WEN <br/><p>Following paper (I), we describe the electrical feature of thermal-sensitive, gas-sensitive and humiditysensitive ceramics by the microstructure-physical model of sensitive ceramics, and obtain some important results. These theoretical results are consistent with experiments, they provide a basis of the theory for materials design of sensitive ceramics. We expect that this model can be taken as the unified microstructure-physical model of this kinds of semiconductor ceramics.</p> <br/>Acta Physica Sinica. 1987 36(10): 1313-1320. Published 1987-05-05 Author(s): NAN CE-WEN <br/><p>Following paper (I), we describe the electrical feature of thermal-sensitive, gas-sensitive and humiditysensitive ceramics by the microstructure-physical model of sensitive ceramics, and obtain some important results. These theoretical results are consistent with experiments, they provide a basis of the theory for materials design of sensitive ceramics. We expect that this model can be taken as the unified microstructure-physical model of this kinds of semiconductor ceramics.</p> <br/>Acta Physica Sinica. 1987 36(10): 1313-1320. Published 1987-05-05 A MICROSTRUCTURE PHYSICAL MODEL OF SENSITIVE SEMICONDUCTOR CERAMICS (Ⅱ) NAN CE-WEN 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1313-1320. article doi:10.7498/aps.36.1313 10.7498/aps.36.1313 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1313 1313-1320 <![CDATA[COMPUTER SIMULATION STUDY ON PRESSURE EFFECT IN AMORPHOUS IRON]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1321 Author(s): HONG JING-XIN, SHEN ZHONG-YI, YIN XIU-JUN, ZHANG YUN, HE SHOU-AN <br/><p>By computer simulation, the pressure induced variation in the behavior of amorphous metals is investigated. We used the Lennard-Jones potential, which is fitted with the equation of state of iron, to relax the amorphous model constructed by sequentially stacking the hard sphere together with energy minimization consideration, so as to yield an amorphous iron model containing 1067 atoms with periodic boundary. The variation of RDF of this amorphous iron model under the application of high pressure is also examined. From the obscuring tendency of two splitted sub-peaks in the second maximum of the RDF of the pressurized model, we suggest that the local ordered correlation in the amorphous alloys might be destroyed during compression. The P-V relation of amorphous iron has also been estimated by comparing with the crystalline state.</p> <br/>Acta Physica Sinica. 1987 36(10): 1321-1329. Published 1987-05-05 Author(s): HONG JING-XIN, SHEN ZHONG-YI, YIN XIU-JUN, ZHANG YUN, HE SHOU-AN <br/><p>By computer simulation, the pressure induced variation in the behavior of amorphous metals is investigated. We used the Lennard-Jones potential, which is fitted with the equation of state of iron, to relax the amorphous model constructed by sequentially stacking the hard sphere together with energy minimization consideration, so as to yield an amorphous iron model containing 1067 atoms with periodic boundary. The variation of RDF of this amorphous iron model under the application of high pressure is also examined. From the obscuring tendency of two splitted sub-peaks in the second maximum of the RDF of the pressurized model, we suggest that the local ordered correlation in the amorphous alloys might be destroyed during compression. The P-V relation of amorphous iron has also been estimated by comparing with the crystalline state.</p> <br/>Acta Physica Sinica. 1987 36(10): 1321-1329. Published 1987-05-05 COMPUTER SIMULATION STUDY ON PRESSURE EFFECT IN AMORPHOUS IRON HONG JING-XIN, SHEN ZHONG-YI, YIN XIU-JUN, ZHANG YUN, HE SHOU-AN 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1321-1329. article doi:10.7498/aps.36.1321 10.7498/aps.36.1321 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1321 1321-1329 <![CDATA[ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅳ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN GaAs AND GaP]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1330 Author(s): HU WEI-MIN, MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU <br/><p>The wavefunctions of the A1 and E states of the ideal divacancy in GaAs, GaP are calculated using the basic equations given in ref. [1] and the tight-binding Hamiltonian given by P. Vogl et al. It is shown that the largest part of the wavefunctions of divacancy states is on the three nearest Ga atoms of the As or P vacancy, the rest part of the wavefunction decreases slowly and non-monotonically as the distance from the defect increases.</p> <br/>Acta Physica Sinica. 1987 36(10): 1330-1335. Published 1987-05-05 Author(s): HU WEI-MIN, MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU <br/><p>The wavefunctions of the A1 and E states of the ideal divacancy in GaAs, GaP are calculated using the basic equations given in ref. [1] and the tight-binding Hamiltonian given by P. Vogl et al. It is shown that the largest part of the wavefunctions of divacancy states is on the three nearest Ga atoms of the As or P vacancy, the rest part of the wavefunction decreases slowly and non-monotonically as the distance from the defect increases.</p> <br/>Acta Physica Sinica. 1987 36(10): 1330-1335. Published 1987-05-05 ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅳ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN GaAs AND GaP HU WEI-MIN, MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1330-1335. article doi:10.7498/aps.36.1330 10.7498/aps.36.1330 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1330 1330-1335 <![CDATA[HOT CARRIER RELAXATION PROCESSES IN GaAs-GaAlAs MULTIPLE QUANTUM WELL STRUCTURES]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1336 Author(s): XU ZHONG-YING, LI YU-ZHANG, XU JUN-YING, XU JI-ZONG, ZHENG BAO-ZHEN, ZHUANG WEI-HUA, GE WEI-KUN <br/><p>By using of the nonlinear luminescence correlation technique, a new time resolved optical spectroscopy technique has been developed and applied to investigating of hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures. It has been found that the well width has a significant effect on the relaxation processes. For a sample with Lz=40?, the time constant of the LO-phonon relaxation was found to be as long as 40ps. The physical me-chanism of this weakened electron-phonon interaction is also discussed.</p> <br/>Acta Physica Sinica. 1987 36(10): 1336-1343. Published 1987-05-05 Author(s): XU ZHONG-YING, LI YU-ZHANG, XU JUN-YING, XU JI-ZONG, ZHENG BAO-ZHEN, ZHUANG WEI-HUA, GE WEI-KUN <br/><p>By using of the nonlinear luminescence correlation technique, a new time resolved optical spectroscopy technique has been developed and applied to investigating of hot carrier relaxation processes in GaAs-GaAlAs multiple quantum well structures. It has been found that the well width has a significant effect on the relaxation processes. For a sample with Lz=40?, the time constant of the LO-phonon relaxation was found to be as long as 40ps. The physical me-chanism of this weakened electron-phonon interaction is also discussed.</p> <br/>Acta Physica Sinica. 1987 36(10): 1336-1343. Published 1987-05-05 HOT CARRIER RELAXATION PROCESSES IN GaAs-GaAlAs MULTIPLE QUANTUM WELL STRUCTURES XU ZHONG-YING, LI YU-ZHANG, XU JUN-YING, XU JI-ZONG, ZHENG BAO-ZHEN, ZHUANG WEI-HUA, GE WEI-KUN 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1336-1343. article doi:10.7498/aps.36.1336 10.7498/aps.36.1336 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1336 1336-1343 <![CDATA[STUDY OF RELATIONSHIP BETWEEN SPONTANEOUS RADIATION AND STIMULATED RADIATION IN CERENKOV FREE ELECTRON LASERS]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1344 Author(s): ZHANG YI-BO <br/><p>In this paper, on the basis of a single-particle model, the relationship between spontaneous radiation and stimulated radiation in Cerenkov free electron lasers is obtained. The results show that in Cerenkov free electron lasers there is a relationship similar to Madey Theorem in wiggler free electron lasers. The gain calculation of oblique angle stimulated Cerenkov radiation by making use of this relationship is given.</p> <br/>Acta Physica Sinica. 1987 36(10): 1344-1348. Published 1987-05-05 Author(s): ZHANG YI-BO <br/><p>In this paper, on the basis of a single-particle model, the relationship between spontaneous radiation and stimulated radiation in Cerenkov free electron lasers is obtained. The results show that in Cerenkov free electron lasers there is a relationship similar to Madey Theorem in wiggler free electron lasers. The gain calculation of oblique angle stimulated Cerenkov radiation by making use of this relationship is given.</p> <br/>Acta Physica Sinica. 1987 36(10): 1344-1348. Published 1987-05-05 STUDY OF RELATIONSHIP BETWEEN SPONTANEOUS RADIATION AND STIMULATED RADIATION IN CERENKOV FREE ELECTRON LASERS ZHANG YI-BO 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1344-1348. article doi:10.7498/aps.36.1344 10.7498/aps.36.1344 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1344 1344-1348 <![CDATA[STRUCTURE DETERMINATION OF HYDROGENATED METALLIC GLASS Ni24.3Zr75.7H0.65]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1349 Author(s): HUANG SHENG-TAO, XUE HONG-YONG, CAO MING-ZHONG, WANG GEN-SHI <br/><p>The radial distribution function of hydrogenated metallic glass Ni24.3Zr75.7H0.65 was deter-mined with X-ray scattering technique to investigate the influence of hydrogcnation on the structure of metallic glass Ni24.3Zr75.7 and the local surroundings of hydrogen atoms in the struc-ture of metallic glass Ni24.3Zr75.7H0.65.</p> <br/>Acta Physica Sinica. 1987 36(10): 1349-1354. Published 1987-05-05 Author(s): HUANG SHENG-TAO, XUE HONG-YONG, CAO MING-ZHONG, WANG GEN-SHI <br/><p>The radial distribution function of hydrogenated metallic glass Ni24.3Zr75.7H0.65 was deter-mined with X-ray scattering technique to investigate the influence of hydrogcnation on the structure of metallic glass Ni24.3Zr75.7 and the local surroundings of hydrogen atoms in the struc-ture of metallic glass Ni24.3Zr75.7H0.65.</p> <br/>Acta Physica Sinica. 1987 36(10): 1349-1354. Published 1987-05-05 STRUCTURE DETERMINATION OF HYDROGENATED METALLIC GLASS Ni24.3Zr75.7H0.65 HUANG SHENG-TAO, XUE HONG-YONG, CAO MING-ZHONG, WANG GEN-SHI 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1349-1354. article doi:10.7498/aps.36.1349 10.7498/aps.36.1349 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1349 1349-1354 <![CDATA[THE STRUCTURE OF β-LaNi5· H6 AND THE HYDROGEN OCCUPATION]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1355 Author(s): DING DA-TUNG, HOU LEI, CHEN HUAN-JIN, JIN QING-HUA, ZHOU DA-MING <br/><p>There were three different versions on the space group of β-LaNi5·Hx(x~6) based on the neutron diffrection measurements: P31 m, P321 and P6/mmm. The arguments were investigated by a synthetical study which combinated the proton NMR second moment and the confi-gurational entropy analyses. The statement involved: to make clear a concept of the rigid repel-lence correlation radius rc; to deduce the corelation coefficient taples for P31 m, P321 and P6/ mmm at different rc's; to propose possible statistical assumptions based on the occupation numbers provided by the neutron diffrections; to modify the formula for calculating the configura-tional entropy and to contrast the calculated values with the experimental value of configuration-al entropy; to contrast the NMR second moment calculated under the same statistical assumption with the value of the NMR experiment; to select out a appropriate version which is capable to fit all the experimental facts. Having conducted such a synthetical study, the conclusion is that the space group of β-LaNi5·H6 should be P6/mmm.</p> <br/>Acta Physica Sinica. 1987 36(10): 1355-1358. Published 1987-05-05 Author(s): DING DA-TUNG, HOU LEI, CHEN HUAN-JIN, JIN QING-HUA, ZHOU DA-MING <br/><p>There were three different versions on the space group of β-LaNi5·Hx(x~6) based on the neutron diffrection measurements: P31 m, P321 and P6/mmm. The arguments were investigated by a synthetical study which combinated the proton NMR second moment and the confi-gurational entropy analyses. The statement involved: to make clear a concept of the rigid repel-lence correlation radius rc; to deduce the corelation coefficient taples for P31 m, P321 and P6/ mmm at different rc's; to propose possible statistical assumptions based on the occupation numbers provided by the neutron diffrections; to modify the formula for calculating the configura-tional entropy and to contrast the calculated values with the experimental value of configuration-al entropy; to contrast the NMR second moment calculated under the same statistical assumption with the value of the NMR experiment; to select out a appropriate version which is capable to fit all the experimental facts. Having conducted such a synthetical study, the conclusion is that the space group of β-LaNi5·H6 should be P6/mmm.</p> <br/>Acta Physica Sinica. 1987 36(10): 1355-1358. Published 1987-05-05 THE STRUCTURE OF β-LaNi5· H6 AND THE HYDROGEN OCCUPATION DING DA-TUNG, HOU LEI, CHEN HUAN-JIN, JIN QING-HUA, ZHOU DA-MING 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1355-1358. article doi:10.7498/aps.36.1355 10.7498/aps.36.1355 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1355 1355-1358 <![CDATA[EXAFS STUDY OF NEAR-NEIGHBOR STRUCTURE ABOUT Mn ATOM IN QUASICRYSTALLINE Al-Mn ALLOY]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1359 Author(s): CHANG LONG-GUN, LU KUN-QUAN, LI CHEN-XI, JIN LONG-HUAN <br/><p>EXAFS spectra (including near edge X-ray absorption spectra) have been measured at the Mn K edge of i-Al6Mn, i-Al4Mn and crystalline Al6Mn. The first near-neighbor structures about Mn atom of the i-Al6Mn and i-Al4Mn have been studied and discussed. We found that the average distance between Al and Mn atoms is about 2.52 angstrom in quasicrystalline phases and its shorter than that in crystalline Al6Mn. The coordination number around Mn atom is about 5 in quasicrystalline phases and is less than that in crystalline Al6Mn. The structure unit may be the same as in i-Al6Mn and i-Al4Mn. It is reasonable that the Mn atoms distribute on the surface of the unit.</p> <br/>Acta Physica Sinica. 1987 36(10): 1359-1363. Published 1987-05-05 Author(s): CHANG LONG-GUN, LU KUN-QUAN, LI CHEN-XI, JIN LONG-HUAN <br/><p>EXAFS spectra (including near edge X-ray absorption spectra) have been measured at the Mn K edge of i-Al6Mn, i-Al4Mn and crystalline Al6Mn. The first near-neighbor structures about Mn atom of the i-Al6Mn and i-Al4Mn have been studied and discussed. We found that the average distance between Al and Mn atoms is about 2.52 angstrom in quasicrystalline phases and its shorter than that in crystalline Al6Mn. The coordination number around Mn atom is about 5 in quasicrystalline phases and is less than that in crystalline Al6Mn. The structure unit may be the same as in i-Al6Mn and i-Al4Mn. It is reasonable that the Mn atoms distribute on the surface of the unit.</p> <br/>Acta Physica Sinica. 1987 36(10): 1359-1363. Published 1987-05-05 EXAFS STUDY OF NEAR-NEIGHBOR STRUCTURE ABOUT Mn ATOM IN QUASICRYSTALLINE Al-Mn ALLOY CHANG LONG-GUN, LU KUN-QUAN, LI CHEN-XI, JIN LONG-HUAN 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1359-1363. article doi:10.7498/aps.36.1359 10.7498/aps.36.1359 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1359 1359-1363 <![CDATA[EFFECTS OF Si ON THE STRUCTURE AND MAGNETIC PROPERTIES OF TETRAGONAL COMPOUND Nd2Fe14B]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1364 Author(s): HU BO-PING, ZHANG SHOU-GONG <br/><p>An investigation is made on the structure and magnetic properties of the tetragonal phase Nd2Fe14 B as influenced by addition of Si. The results show that: Si (up to a content of as much as twice that of B) does not destroy the tetragonal structure of Nd2Fe14B, but forms a pseudo-ternary intermetallic compound Nd2(Fe, Si)14B. The lattice constants and saturation magnetization of Nd2 (Fe, Si)14-B decrease and its Curie temperature increases with increasing Si content. The magnitude of the anisotropy field and the easy direction of magnetization of Nd2Fe14B at room temperature are not affected by the addition of Si. The inclusion of Si in Nd2Fe14B has a great influence on the magnetic anisotropy of Nd2Fe14B at low temperatures, showing an increase in the angle between c-axis and the direction of easy cone.</p> <br/>Acta Physica Sinica. 1987 36(10): 1364-1370. Published 1987-05-05 Author(s): HU BO-PING, ZHANG SHOU-GONG <br/><p>An investigation is made on the structure and magnetic properties of the tetragonal phase Nd2Fe14 B as influenced by addition of Si. The results show that: Si (up to a content of as much as twice that of B) does not destroy the tetragonal structure of Nd2Fe14B, but forms a pseudo-ternary intermetallic compound Nd2(Fe, Si)14B. The lattice constants and saturation magnetization of Nd2 (Fe, Si)14-B decrease and its Curie temperature increases with increasing Si content. The magnitude of the anisotropy field and the easy direction of magnetization of Nd2Fe14B at room temperature are not affected by the addition of Si. The inclusion of Si in Nd2Fe14B has a great influence on the magnetic anisotropy of Nd2Fe14B at low temperatures, showing an increase in the angle between c-axis and the direction of easy cone.</p> <br/>Acta Physica Sinica. 1987 36(10): 1364-1370. Published 1987-05-05 EFFECTS OF Si ON THE STRUCTURE AND MAGNETIC PROPERTIES OF TETRAGONAL COMPOUND Nd2Fe14B HU BO-PING, ZHANG SHOU-GONG 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1364-1370. article doi:10.7498/aps.36.1364 10.7498/aps.36.1364 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1364 1364-1370 <![CDATA[THE MAGNETIC PROPERTY OF AMORPHOUS Pr-Co THIN FILMS]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1371 Author(s): WAN HONG, DAI DAO-SHENG, FANG RUI-YI, LIU ZUN-XIAO <br/><p>Amorphous thin films of PrxCo1-x alloys were prepared over the composition range 0.06-0.86 by the vacuum evaporation method with two sources. The magnetic properties of those films were measured by using extracting sample magnetometer, vibrating sample magnetometer and the alternating susceptibility set. The dependence of magnetization of these films on temperature and field were studied. It was found that the magnetization has a sudden drop near the temperature corresponding to the maximun of the value of the alternating magnetic susceptibility, and for samples with xco and Pr atom μpr were calculated. The effective magnetic moment of Co atom μco equals l.36f(x), where f(x) is the probability for bearing magnetic moment of cobalt atoms. The effective magnetic moment of Pr atom equals 1.6 μB in. the composition range 0-40% and decreases rapidly in the range 0.4-0.86.</p> <br/>Acta Physica Sinica. 1987 36(10): 1371-1374. Published 1987-05-05 Author(s): WAN HONG, DAI DAO-SHENG, FANG RUI-YI, LIU ZUN-XIAO <br/><p>Amorphous thin films of PrxCo1-x alloys were prepared over the composition range 0.06-0.86 by the vacuum evaporation method with two sources. The magnetic properties of those films were measured by using extracting sample magnetometer, vibrating sample magnetometer and the alternating susceptibility set. The dependence of magnetization of these films on temperature and field were studied. It was found that the magnetization has a sudden drop near the temperature corresponding to the maximun of the value of the alternating magnetic susceptibility, and for samples with xco and Pr atom μpr were calculated. The effective magnetic moment of Co atom μco equals l.36f(x), where f(x) is the probability for bearing magnetic moment of cobalt atoms. The effective magnetic moment of Pr atom equals 1.6 μB in. the composition range 0-40% and decreases rapidly in the range 0.4-0.86.</p> <br/>Acta Physica Sinica. 1987 36(10): 1371-1374. Published 1987-05-05 THE MAGNETIC PROPERTY OF AMORPHOUS Pr-Co THIN FILMS WAN HONG, DAI DAO-SHENG, FANG RUI-YI, LIU ZUN-XIAO 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1371-1374. article doi:10.7498/aps.36.1371 10.7498/aps.36.1371 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1371 1371-1374 <![CDATA[A STUDY OF OXIDATION PROCESS ON Fe-SURFACE]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1375 Author(s): CHEN YUN-QI, LIN ZHANG-DA, WU SHU-YAO, QI SHANG-XUE, WU XIAO-LIN <br/><p>The early oxidation process of pure Fe was studied by XPS, UPS and AES. When the temperature and partial pressure of oxygen is not too high, the product of the reaction between polycrystalline Fe and oxygen is pure Fe3O4, but not FeO or a-Fe2O3 or a structure of layers of the three compounds. If the temperature is higher than 600℃ and the partial pressure of oxygen approach 1 × 10-6 Torr, the thermo-desorption process occurs instead of oxidation process on polystalline Fe surface.</p> <br/>Acta Physica Sinica. 1987 36(10): 1375-1381. Published 1987-05-05 Author(s): CHEN YUN-QI, LIN ZHANG-DA, WU SHU-YAO, QI SHANG-XUE, WU XIAO-LIN <br/><p>The early oxidation process of pure Fe was studied by XPS, UPS and AES. When the temperature and partial pressure of oxygen is not too high, the product of the reaction between polycrystalline Fe and oxygen is pure Fe3O4, but not FeO or a-Fe2O3 or a structure of layers of the three compounds. If the temperature is higher than 600℃ and the partial pressure of oxygen approach 1 × 10-6 Torr, the thermo-desorption process occurs instead of oxidation process on polystalline Fe surface.</p> <br/>Acta Physica Sinica. 1987 36(10): 1375-1381. Published 1987-05-05 A STUDY OF OXIDATION PROCESS ON Fe-SURFACE CHEN YUN-QI, LIN ZHANG-DA, WU SHU-YAO, QI SHANG-XUE, WU XIAO-LIN 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1375-1381. article doi:10.7498/aps.36.1375 10.7498/aps.36.1375 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1375 1375-1381 <![CDATA[STUDY OF THE LUMINESCENCE PROPERTIES OF Ni2+: BeAl2O4 CRYSTAL]]> //m.getgobooth.com/en/article/doi/10.7498/aps.36.1382 Author(s): WEN GENG-WANG, WANG LU-YIA, LIU SONG-HAO, JI HAN-TIN, JIANG ZHI-CHEN, CHEN JUN-DE <br/><p>The Laser induced fluorescence spectra and excitation decay process of Ni2+ doped with chrysoberyl were studied in temperature rang of 10 K to 300 K. It was shown that the intrinsic radiative lifetime of 3T2g state is 123±7.2 μs. Mott activation energy is 1147 cm-1. Ni2+:BeAl2O4 Crystal has considerable high radiative rate and luminescence efficiency at room temperature and is a possible good candidate for making tunable laser.</p> <br/>Acta Physica Sinica. 1987 36(10): 1382-1385. Published 1987-05-05 Author(s): WEN GENG-WANG, WANG LU-YIA, LIU SONG-HAO, JI HAN-TIN, JIANG ZHI-CHEN, CHEN JUN-DE <br/><p>The Laser induced fluorescence spectra and excitation decay process of Ni2+ doped with chrysoberyl were studied in temperature rang of 10 K to 300 K. It was shown that the intrinsic radiative lifetime of 3T2g state is 123±7.2 μs. Mott activation energy is 1147 cm-1. Ni2+:BeAl2O4 Crystal has considerable high radiative rate and luminescence efficiency at room temperature and is a possible good candidate for making tunable laser.</p> <br/>Acta Physica Sinica. 1987 36(10): 1382-1385. Published 1987-05-05 STUDY OF THE LUMINESCENCE PROPERTIES OF Ni2+: BeAl2O4 CRYSTAL WEN GENG-WANG, WANG LU-YIA, LIU SONG-HAO, JI HAN-TIN, JIANG ZHI-CHEN, CHEN JUN-DE 1987-05-05 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1987 36(10): 1382-1385. article doi:10.7498/aps.36.1382 10.7498/aps.36.1382 Acta Physica Sinica 36 10 1987-05-05 //m.getgobooth.com/en/article/doi/10.7498/aps.36.1382 1382-1385