//m.getgobooth.com/ 必威体育下载 daily 15 2024-09-05 15:36:22 apsoffice@iphy.ac.cn apsoffice@iphy.ac.cn 2024-09-05 15:36:22 zh Copyright ©Acta Physica Sinica All Rights Reserved. 京ICP备05002789号-1 Address: PostCode：100190 Phone: 010-82649829，82649241,82649863 Email: apsoffice@iphy.ac.cn Copyright ©Acta Physica Sinica All Rights Reserved apsoffice@iphy.ac.cn 1000-3290 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1391 Author(s): CHEN KAI-MAO, JIN SI-XUAN, WU LAN-QING, TAN XUE-QING <br/><p>In this paper two kinds of photocapacitance transientes, corresponding respectively to two cases of coupling and uncoupling of two or more deep levels have been studied in detail. According to the great difference of the two kinds of the photocapacitance transientes, a method of determining if two or more deep levels belong to the same center has been suggested. It has some advantages that it can be used to measure the sample including more than two deep levels, the processes are quite simple, and it takes short time to finish a measurement. For example, this method has been used to judge the donor and acceptor levels related to gold in Si. The result has proved that they belong to the same center related to gold in Si.</p> <br/>Acta Physica Sinica. 1989 38(9): 1391-1399. Published 2005-07-08 Author(s): CHEN KAI-MAO, JIN SI-XUAN, WU LAN-QING, TAN XUE-QING <br/><p>In this paper two kinds of photocapacitance transientes, corresponding respectively to two cases of coupling and uncoupling of two or more deep levels have been studied in detail. According to the great difference of the two kinds of the photocapacitance transientes, a method of determining if two or more deep levels belong to the same center has been suggested. It has some advantages that it can be used to measure the sample including more than two deep levels, the processes are quite simple, and it takes short time to finish a measurement. For example, this method has been used to judge the donor and acceptor levels related to gold in Si. The result has proved that they belong to the same center related to gold in Si.</p> <br/>Acta Physica Sinica. 1989 38(9): 1391-1399. Published 2005-07-08 A METHOD FOR DETERMINING IF TWO OR MORE DEEP LEVELS BELONG TO THE SAME CENTER CHEN KAI-MAO, JIN SI-XUAN, WU LAN-QING, TAN XUE-QING 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1391-1399. article doi:10.7498/aps.38.1391 10.7498/aps.38.1391 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1391 1391-1399 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1400 Author(s): LlU JIA-RUI, ZHANG JIAN-HUA, LI YI <br/><p>The interactions between incident particles and solids in ion implantation have been in-vestigated based on the generalized Langevin equation of classical dynamics. Considering an-harmonic effects of interactions among lattice atoms the energy exchange between incident particles and target atoms, the nuclear stopping power and the distributions of project ranges have been calculated numerically. The effect of the phonon spectra excited by the incident particles has been discussed also. All calculations are in good agreement with the results of the program TRIM88 in the low energy range.</p> <br/>Acta Physica Sinica. 1989 38(9): 1400-1405. Published 2005-07-08 Author(s): LlU JIA-RUI, ZHANG JIAN-HUA, LI YI <br/><p>The interactions between incident particles and solids in ion implantation have been in-vestigated based on the generalized Langevin equation of classical dynamics. Considering an-harmonic effects of interactions among lattice atoms the energy exchange between incident particles and target atoms, the nuclear stopping power and the distributions of project ranges have been calculated numerically. The effect of the phonon spectra excited by the incident particles has been discussed also. All calculations are in good agreement with the results of the program TRIM88 in the low energy range.</p> <br/>Acta Physica Sinica. 1989 38(9): 1400-1405. Published 2005-07-08 THE EFFECT OF ANHARMONIC INTERACTIONS AMONG LATTICE ATOMS ON THE ION IMPLANTATION LlU JIA-RUI, ZHANG JIAN-HUA, LI YI 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1400-1405. article doi:10.7498/aps.38.1400 10.7498/aps.38.1400 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1400 1400-1405 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1406 Author(s): TONG XIAO-MIN, LI JIA-MING <br/><p>There is recent interest in atomic inner-shell two-photon decay processes because state-of-art experimental techniques (such as electronic coincident measurement etc.) have made it possible to measure the two-photon decay rate in the X-ray region. We perform relativistic self-consistent field calculations on the two-photon decay rates of (ls)-1→(ns)-1 transitions (n = 2,3,4) and (ls)-1→(nd)-1 transitions (n = 3,4) for hydrogen, hydrogen-like Xe ion and Xe atoms. Comparing the hydrogemc and the hydrogen-like Xe ion rates, we can clearly demonstrate the relativistic effect. Comparing our previous non-relativistic and our present relativistic Xe atom rates, we can also demonstrate the relativistic effect in the atomic inner-shell two photon decays. Comparing the hydrogen-like Xe ion and the Xe atom rates, we can explain the atomic screening effect. After elucidating the relativistic effect and the atomic screening effect, we are convinced that we have obtained the reliable relativistic rates, which can provide a basis to analyze th effect of electron correlations in the atomic inner-shell two-photon decays. We also compare our results with the experimental measurement and other theoretical results.</p> <br/>Acta Physica Sinica. 1989 38(9): 1406-1412. Published 2005-07-08 Author(s): TONG XIAO-MIN, LI JIA-MING <br/><p>There is recent interest in atomic inner-shell two-photon decay processes because state-of-art experimental techniques (such as electronic coincident measurement etc.) have made it possible to measure the two-photon decay rate in the X-ray region. We perform relativistic self-consistent field calculations on the two-photon decay rates of (ls)-1→(ns)-1 transitions (n = 2,3,4) and (ls)-1→(nd)-1 transitions (n = 3,4) for hydrogen, hydrogen-like Xe ion and Xe atoms. Comparing the hydrogemc and the hydrogen-like Xe ion rates, we can clearly demonstrate the relativistic effect. Comparing our previous non-relativistic and our present relativistic Xe atom rates, we can also demonstrate the relativistic effect in the atomic inner-shell two photon decays. Comparing the hydrogen-like Xe ion and the Xe atom rates, we can explain the atomic screening effect. After elucidating the relativistic effect and the atomic screening effect, we are convinced that we have obtained the reliable relativistic rates, which can provide a basis to analyze th effect of electron correlations in the atomic inner-shell two-photon decays. We also compare our results with the experimental measurement and other theoretical results.</p> <br/>Acta Physica Sinica. 1989 38(9): 1406-1412. Published 2005-07-08 TWO-PHOTON TRANSITIONS IN ATOMIC INNER-SHELLS FOR Xe——RELETIVISTIC EFFECT AND ATOMIC SCREENING EFFECT TONG XIAO-MIN, LI JIA-MING 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1406-1412. article doi:10.7498/aps.38.1406 10.7498/aps.38.1406 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1406 1406-1412 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1413 Author(s): LI GUO-QIANG, XU GONG-OU <br/><p>The selfconsistent semiclassical approach is extended from the case of zero temperature to finite temperature to determine the nucleon densities of hot nuclei. The properties of giant resonances on hot nuclei, espencially the temperature dependence of the centroids, are evaluated and analysed with help of the densities above determined. Some of the present results are compared with those of HF and RPA.</p> <br/>Acta Physica Sinica. 1989 38(9): 1413-1421. Published 2005-07-08 Author(s): LI GUO-QIANG, XU GONG-OU <br/><p>The selfconsistent semiclassical approach is extended from the case of zero temperature to finite temperature to determine the nucleon densities of hot nuclei. The properties of giant resonances on hot nuclei, espencially the temperature dependence of the centroids, are evaluated and analysed with help of the densities above determined. Some of the present results are compared with those of HF and RPA.</p> <br/>Acta Physica Sinica. 1989 38(9): 1413-1421. Published 2005-07-08 THE PROPERTITIES OF GIANT RESONANCED ON HOT NUC-LEI STUDIED BY FINITE TEMPERATURE SELFCO-NSISTENT SEMICLASSICAL APPROACH LI GUO-QIANG, XU GONG-OU 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1413-1421. article doi:10.7498/aps.38.1413 10.7498/aps.38.1413 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1413 1413-1421 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1422 Author(s): WANG QIANG, ZHANG XIAO-WEN, GU BING-LIN <br/><p>In the paper, we use the theory of order-disorder transition to discuss this kind of transition in A(B1/21 B1/22)O3 system. We point out thai interaction energy parameter J plays an important role in the formation of ordered domain with B:B = 1:1. In addition, the relation among the interaction, charge and size of the B-site ions is discussed. The results are in agreement with experiments reasonably.</p> <br/>Acta Physica Sinica. 1989 38(9): 1422-1428. Published 2005-07-08 Author(s): WANG QIANG, ZHANG XIAO-WEN, GU BING-LIN <br/><p>In the paper, we use the theory of order-disorder transition to discuss this kind of transition in A(B1/21 B1/22)O3 system. We point out thai interaction energy parameter J plays an important role in the formation of ordered domain with B:B = 1:1. In addition, the relation among the interaction, charge and size of the B-site ions is discussed. The results are in agreement with experiments reasonably.</p> <br/>Acta Physica Sinica. 1989 38(9): 1422-1428. Published 2005-07-08 A STUDY ON ORDER-DISORDER TRANSITION OF A(Bi1/21B1/22)O3 SYSTEM WANG QIANG, ZHANG XIAO-WEN, GU BING-LIN 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1422-1428. article doi:10.7498/aps.38.1422 10.7498/aps.38.1422 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1422 1422-1428 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1429 Author(s): YANG YING-CHANG, SUN HONG, CHENG BEN-PEI <br/><p>The compounds YTi (Fe1-xNix)11 are found to crystallize in the ThMn12-type tetragonal structure (space group 14/mmm) when x1-xNix)11 has been studied and explained in terms of the interatomic distance dependence of exchange interaction between Fe atoms.</p> <br/>Acta Physica Sinica. 1989 38(9): 1429-1435. Published 2005-07-08 Author(s): YANG YING-CHANG, SUN HONG, CHENG BEN-PEI <br/><p>The compounds YTi (Fe1-xNix)11 are found to crystallize in the ThMn12-type tetragonal structure (space group 14/mmm) when x1-xNix)11 has been studied and explained in terms of the interatomic distance dependence of exchange interaction between Fe atoms.</p> <br/>Acta Physica Sinica. 1989 38(9): 1429-1435. Published 2005-07-08 CRYSTALLOGRAPHY AND MAGNETIC PROPERTIES OF YTi(Fe1-xNix)11 YANG YING-CHANG, SUN HONG, CHENG BEN-PEI 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1429-1435. article doi:10.7498/aps.38.1429 10.7498/aps.38.1429 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1429 1429-1435 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1436 Author(s): ZHANG JIAN-PING, LI LING, YE PEI-DA <br/><p>In this paper, a semiclassical rate equation model has been established and the FM noise power spectrum calculated. We show that the spectral line width can be narrowed by the negative electrical feedback technique. Within the feedback loop bandwidth, the chirp-power-ratio (CPR) is reduced by a factor of 1+H, it shows that this kind of laser can be used as the light source in FSK coherent transmission system. Because of the direct modulation phase delay of the semiconductor laser, l/f-type FM noise is one of the important origin of the limitation, for linewidth reduction.</p> <br/>Acta Physica Sinica. 1989 38(9): 1436-1442. Published 2005-07-08 Author(s): ZHANG JIAN-PING, LI LING, YE PEI-DA <br/><p>In this paper, a semiclassical rate equation model has been established and the FM noise power spectrum calculated. We show that the spectral line width can be narrowed by the negative electrical feedback technique. Within the feedback loop bandwidth, the chirp-power-ratio (CPR) is reduced by a factor of 1+H, it shows that this kind of laser can be used as the light source in FSK coherent transmission system. Because of the direct modulation phase delay of the semiconductor laser, l/f-type FM noise is one of the important origin of the limitation, for linewidth reduction.</p> <br/>Acta Physica Sinica. 1989 38(9): 1436-1442. Published 2005-07-08 A SEMICLASSICAL THEORY OF NEGATIVE FEEDBACK SEMICONDUCTOR LASER ZHANG JIAN-PING, LI LING, YE PEI-DA 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1436-1442. article doi:10.7498/aps.38.1436 10.7498/aps.38.1436 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1436 1436-1442 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1443 Author(s): ZHU HUI-LONG <br/><p>The Point defect concentrations around voids and dislocations in irradiated materials were studied using reaction-diffusion equations. The equations which contained the terms involving recombination of vacancies and interstitials were solved approximately. It turned out that the effects of the recombination on the sink strengths cannot be neglected when damage dose rate and void size become large Actually, we obtain that when void radius is greater than 200A and damage dose rate reaches 10-2 dPa/s the values of void sink and dislocation sink streng ths exceed more than 50% of those given by previous works.</p> <br/>Acta Physica Sinica. 1989 38(9): 1443-1453. Published 2005-07-08 Author(s): ZHU HUI-LONG <br/><p>The Point defect concentrations around voids and dislocations in irradiated materials were studied using reaction-diffusion equations. The equations which contained the terms involving recombination of vacancies and interstitials were solved approximately. It turned out that the effects of the recombination on the sink strengths cannot be neglected when damage dose rate and void size become large Actually, we obtain that when void radius is greater than 200A and damage dose rate reaches 10-2 dPa/s the values of void sink and dislocation sink streng ths exceed more than 50% of those given by previous works.</p> <br/>Acta Physica Sinica. 1989 38(9): 1443-1453. Published 2005-07-08 A THEORY OF SWELLING DUE TO VOID GROWTH IN IRRADIATED MATERIALS (Ⅰ)——NEUTRAL SINKS ZHU HUI-LONG 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1443-1453. article doi:10.7498/aps.38.1443 10.7498/aps.38.1443 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1443 1443-1453 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1454 Author(s): ZHU HUI-LONG <br/><p>Approximate concentration distributions of point defects around a dislocation in irradiated material are obtained by dividing the region near the dislocation into two parts in which some definite approximations are used. Then dislocation biasfactor for interstitials is determined, the value of the factor is less than the previous one by 20-50%. As a result, a formula of swelling due to void growth in irradiated materials is obtained, it agrees with experimental data reasonably.</p> <br/>Acta Physica Sinica. 1989 38(9): 1454-1466. Published 2005-07-08 Author(s): ZHU HUI-LONG <br/><p>Approximate concentration distributions of point defects around a dislocation in irradiated material are obtained by dividing the region near the dislocation into two parts in which some definite approximations are used. Then dislocation biasfactor for interstitials is determined, the value of the factor is less than the previous one by 20-50%. As a result, a formula of swelling due to void growth in irradiated materials is obtained, it agrees with experimental data reasonably.</p> <br/>Acta Physica Sinica. 1989 38(9): 1454-1466. Published 2005-07-08 A THEORY OF SWELLING DUE TO VOID GROWTH IN IRRADIATED MATERIALS (Ⅱ)——BIAS FACTOR AND SWELLING FORMULA ZHU HUI-LONG 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1454-1466. article doi:10.7498/aps.38.1454 10.7498/aps.38.1454 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1454 1454-1466 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1467 Author(s): LI FU-BlN <br/><p>This paper provide the microscopic phenomenological theory of analysis for the problem of nonequilibrium fluctuations, i.e. the statistical theory for description of nonequilibrium fluctuations. This theory is based on a generalized nonequilibrium entropy and an extension of the Einstein formula for the probability of the fluctuations. We obtain the second moments of nonequilibrium fluctuation of the specific energy and the heat flux in rigid heat conductors by calculation. This approach leads to nonequilibrium corrections to the conventional fluctuation-dissipation expressions for the heat fluctuations. The corresponding numerical corrections are obtained for phonon heat transport in dielectrics and for electronic heat transport in metals.</p> <br/>Acta Physica Sinica. 1989 38(9): 1467-1474. Published 2005-07-08 Author(s): LI FU-BlN <br/><p>This paper provide the microscopic phenomenological theory of analysis for the problem of nonequilibrium fluctuations, i.e. the statistical theory for description of nonequilibrium fluctuations. This theory is based on a generalized nonequilibrium entropy and an extension of the Einstein formula for the probability of the fluctuations. We obtain the second moments of nonequilibrium fluctuation of the specific energy and the heat flux in rigid heat conductors by calculation. This approach leads to nonequilibrium corrections to the conventional fluctuation-dissipation expressions for the heat fluctuations. The corresponding numerical corrections are obtained for phonon heat transport in dielectrics and for electronic heat transport in metals.</p> <br/>Acta Physica Sinica. 1989 38(9): 1467-1474. Published 2005-07-08 THE MICROSCOPIC PHENOMENOLOGICAL THEORY OF ANALYSIS FOR THE PROBLEM OF NONEQUILIBRIUM FLUCTUATIONS (Ⅰ)——A NEW THEORY OF EXTENDED IRREVERSIBLE THERMODY-NAMICS AND NONEQUILIBRIUM CORRECTIONS OF THE FLUCTUATION-DISSIPATION EXPRESSIONS FOR THE HEAT FL LI FU-BlN 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1467-1474. article doi:10.7498/aps.38.1467 10.7498/aps.38.1467 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1467 1467-1474 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1475 Author(s): ZI JIAN, ZHANG KAI-MING, XIE XI-DE <br/><p>Effective nearest- and next nearest-neighbor interactions are used to study phonons and phonon softening at Mo(00l) surface with continuously varying the surface interaction parameters αs, and βs. The phonon stability diagram is obtained. The vibrational modes and softening of surface waves are investigated. The relations between softening of surface waves and reconstruction of Mo(00l) surface are discussed in some detail.</p> <br/>Acta Physica Sinica. 1989 38(9): 1475-1482. Published 2005-07-08 Author(s): ZI JIAN, ZHANG KAI-MING, XIE XI-DE <br/><p>Effective nearest- and next nearest-neighbor interactions are used to study phonons and phonon softening at Mo(00l) surface with continuously varying the surface interaction parameters αs, and βs. The phonon stability diagram is obtained. The vibrational modes and softening of surface waves are investigated. The relations between softening of surface waves and reconstruction of Mo(00l) surface are discussed in some detail.</p> <br/>Acta Physica Sinica. 1989 38(9): 1475-1482. Published 2005-07-08 PHONONS, PHONON INSTABILITY AND RECONSTRUCTION OF Mo(001) SURFACE ZI JIAN, ZHANG KAI-MING, XIE XI-DE 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1475-1482. article doi:10.7498/aps.38.1475 10.7498/aps.38.1475 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1475 1475-1482 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1483 Author(s): YANG SHUN-HUA, HU XIAO-FENG, MA RU-ZHANG <br/><p>We propose an ideal configuration of a dislocation obliquely intersecting the phase boundary in a two phase medium. By employing the general integral method of anisotropic elas-tic theory of dislocations and the Gibbia-Eshelby theorem for boundaries, we obtain the numerical solutions for elastic field of this dislocation as well as the "image" force acting on it. Our model and computing method are shown to be applicable in general. The results can be used to further calculate the interaction between this dialocation and other defects. This work is also a meaningful starting point for considering the effect of such oblique dislocations in diffusionless phase transformations.</p> <br/>Acta Physica Sinica. 1989 38(9): 1483-1491. Published 2005-07-08 Author(s): YANG SHUN-HUA, HU XIAO-FENG, MA RU-ZHANG <br/><p>We propose an ideal configuration of a dislocation obliquely intersecting the phase boundary in a two phase medium. By employing the general integral method of anisotropic elas-tic theory of dislocations and the Gibbia-Eshelby theorem for boundaries, we obtain the numerical solutions for elastic field of this dislocation as well as the "image" force acting on it. Our model and computing method are shown to be applicable in general. The results can be used to further calculate the interaction between this dialocation and other defects. This work is also a meaningful starting point for considering the effect of such oblique dislocations in diffusionless phase transformations.</p> <br/>Acta Physica Sinica. 1989 38(9): 1483-1491. Published 2005-07-08 THE ELASTIC PROPERTIES OF A DISLOCATION IN TWO PHASE MEDIUM YANG SHUN-HUA, HU XIAO-FENG, MA RU-ZHANG 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1483-1491. article doi:10.7498/aps.38.1483 10.7498/aps.38.1483 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1483 1483-1491 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1492 Author(s): FENG SHI-PING <br/><p>When the dopping is low enough, the holes obey Bose statistics[14], Bose-Einstein condensation of these holes may lead to occurance of superconductivity. In this framework, we have calculated some physical quantities, the results are in qualitative agreement with experiments.</p> <br/>Acta Physica Sinica. 1989 38(9): 1492-1496. Published 2005-07-08 Author(s): FENG SHI-PING <br/><p>When the dopping is low enough, the holes obey Bose statistics[14], Bose-Einstein condensation of these holes may lead to occurance of superconductivity. In this framework, we have calculated some physical quantities, the results are in qualitative agreement with experiments.</p> <br/>Acta Physica Sinica. 1989 38(9): 1492-1496. Published 2005-07-08 SUPERCONDUCTIVITY RESULTING FROM ANTIFERROMAGNETIC STATES FENG SHI-PING 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1492-1496. article doi:10.7498/aps.38.1492 10.7498/aps.38.1492 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1492 1492-1496 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1497 Author(s): CHEN HONG, ZHANG YU-MEI, WU XIANG <br/><p>Based on the renormalization effect of the phonon ground state on the tunneling parameters, a new method is proposed to investigate the localization-dislocalization transition of a tunneling system with bosonic bath. Our study shows the previous theories are in principle built on the displaced phonon state approximation, while our method may be used to examine the effects of other type of phonon ground states (such as squeezed phonon state) on the localization-dislocalization transition.</p> <br/>Acta Physica Sinica. 1989 38(9): 1497-1500. Published 2005-07-08 Author(s): CHEN HONG, ZHANG YU-MEI, WU XIANG <br/><p>Based on the renormalization effect of the phonon ground state on the tunneling parameters, a new method is proposed to investigate the localization-dislocalization transition of a tunneling system with bosonic bath. Our study shows the previous theories are in principle built on the displaced phonon state approximation, while our method may be used to examine the effects of other type of phonon ground states (such as squeezed phonon state) on the localization-dislocalization transition.</p> <br/>Acta Physica Sinica. 1989 38(9): 1497-1500. Published 2005-07-08 LOCALIZATION-DISLOCALIZATION TRANSITION IN DISSIP-ATIVE QUANTUM TUNNELING SYSTEMS CHEN HONG, ZHANG YU-MEI, WU XIANG 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1497-1500. article doi:10.7498/aps.38.1497 10.7498/aps.38.1497 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1497 1497-1500 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1501 Author(s): CHEN RUI-XIONG <br/><p>We generalize the resuits of ref. [1] , expplain the proof of the formulae shown in this paper by the method of the inverse orbits analysis. According to this, we can calculate the value of the topological entropy on any point in the whole parameter interval. On the basis of discussing the effect of "*" product on the topological entropy, we obtain the overview of the topological entropy of one-dimensional maps.</p> <br/>Acta Physica Sinica. 1989 38(9): 1501-1505. Published 2005-07-08 Author(s): CHEN RUI-XIONG <br/><p>We generalize the resuits of ref. [1] , expplain the proof of the formulae shown in this paper by the method of the inverse orbits analysis. According to this, we can calculate the value of the topological entropy on any point in the whole parameter interval. On the basis of discussing the effect of "*" product on the topological entropy, we obtain the overview of the topological entropy of one-dimensional maps.</p> <br/>Acta Physica Sinica. 1989 38(9): 1501-1505. Published 2005-07-08 DETERMINATION OF THE TOPOLOGICAL ENTROPY OF ONE-DIMENSIONAL MAPS BY THE INVERSE ORBITS ANALYSIS CHEN RUI-XIONG 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1501-1505. article doi:10.7498/aps.38.1501 10.7498/aps.38.1501 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1501 1501-1505 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1506 Author(s): XIE SHI-JIE, MEI LIANG-MO, SUN XIN <br/><p>We have proposed a simple Hamiltonian for poly(p-phenylene) in the framework of SSH tight binding model. The calculations presented to the ground state, polaron and bipolaron show that the formation of doubly charged bipolaron is energetically more favorable than the-formation of two polarons with single, charge. Because the period of the chain is 4a, the CB and VB band will split in two, and when there is a polaron (or bipolaron) in the chain, shallow energe levels will emerge near each band edge besides the polaron (or bipolaron) energe levels, all the corresponding electronic states are localized.</p> <br/>Acta Physica Sinica. 1989 38(9): 1506-1509. Published 2005-07-08 Author(s): XIE SHI-JIE, MEI LIANG-MO, SUN XIN <br/><p>We have proposed a simple Hamiltonian for poly(p-phenylene) in the framework of SSH tight binding model. The calculations presented to the ground state, polaron and bipolaron show that the formation of doubly charged bipolaron is energetically more favorable than the-formation of two polarons with single, charge. Because the period of the chain is 4a, the CB and VB band will split in two, and when there is a polaron (or bipolaron) in the chain, shallow energe levels will emerge near each band edge besides the polaron (or bipolaron) energe levels, all the corresponding electronic states are localized.</p> <br/>Acta Physica Sinica. 1989 38(9): 1506-1509. Published 2005-07-08 GROUND STATE AND POLARON AND BIPOLARON EXCITATIONS IN POLY (P-PHENYLENE) XIE SHI-JIE, MEI LIANG-MO, SUN XIN 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1506-1509. article doi:10.7498/aps.38.1506 10.7498/aps.38.1506 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1506 1506-1509 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1510 Author(s): Lü YAN-NAN, HUANG ZU-QIA <br/><p>A perturbative calculation for the long-range and intermediate interactions between excited state H2(E1∑g+) and ground state H2(X1∑g+) in the crossed geometry is performed by using a trial wavefunction depending on the interelectronic distance explicitly. According to the results, there is a potential energy barrier around the inter-molecular separation D = 6.5α0. Inside the barrier, there shows a strong chemical bond behavior.</p> <br/>Acta Physica Sinica. 1989 38(9): 1510-1514. Published 2005-07-08 Author(s): Lü YAN-NAN, HUANG ZU-QIA <br/><p>A perturbative calculation for the long-range and intermediate interactions between excited state H2(E1∑g+) and ground state H2(X1∑g+) in the crossed geometry is performed by using a trial wavefunction depending on the interelectronic distance explicitly. According to the results, there is a potential energy barrier around the inter-molecular separation D = 6.5α0. Inside the barrier, there shows a strong chemical bond behavior.</p> <br/>Acta Physica Sinica. 1989 38(9): 1510-1514. Published 2005-07-08 ON THE INTERACTION OF H2 (X1∑g+)—H2(E1∑g+) SYSTEM Lü YAN-NAN, HUANG ZU-QIA 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1510-1514. article doi:10.7498/aps.38.1510 10.7498/aps.38.1510 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1510 1510-1514 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1515 Author(s): LEI ZI-MING, YANG FENG, YU DE-HONG, LIU JIA-RUI, PAN GUANG-YAN, SUN XIANG <br/><p>Absolute measurements of emission cross sections have been performed for the lines from Arll excited states in Ar2++Li and Ar2++Na collision. The energy of incedent ions ranged from 40 keV to 300 keV. The dependence of the emission cross sections on the energy defect △E is discussed. We find that the processes with intermediate △E(&lt;0) have larger cross sections. We also find that the excited states correlated to the observed lines belong to the high J quantum numbers in an electron configuration.</p> <br/>Acta Physica Sinica. 1989 38(9): 1515-1520. Published 2005-07-08 Author(s): LEI ZI-MING, YANG FENG, YU DE-HONG, LIU JIA-RUI, PAN GUANG-YAN, SUN XIANG <br/><p>Absolute measurements of emission cross sections have been performed for the lines from Arll excited states in Ar2++Li and Ar2++Na collision. The energy of incedent ions ranged from 40 keV to 300 keV. The dependence of the emission cross sections on the energy defect △E is discussed. We find that the processes with intermediate △E(&lt;0) have larger cross sections. We also find that the excited states correlated to the observed lines belong to the high J quantum numbers in an electron configuration.</p> <br/>Acta Physica Sinica. 1989 38(9): 1515-1520. Published 2005-07-08 SINGLE ELECTRON CAPTURE INTO EXCITED STATES IN COLLISIONS OF Ar2+ WITH Li AND Na LEI ZI-MING, YANG FENG, YU DE-HONG, LIU JIA-RUI, PAN GUANG-YAN, SUN XIANG 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1515-1520. article doi:10.7498/aps.38.1515 10.7498/aps.38.1515 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1515 1515-1520 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1521 Author(s): WANG YUAN-MING, CHEN JIANG-HUA, HU TIAN-BAO <br/><p>In a detailed study of the problem of induced numerical artifacts in the Real Space (RS) High Resolution Electron Microscopy (HREM) image simulation, a δ-ε criterion in the RS method for simulating HREM images has been derived. This condition imposes a practical limitation in choosing the sampling interval δ and the slice thickness ε for the RS method. It has been found that when the δ-ε condition is satisfied and a much more accurate formula is used for calculating the propagating factor p(r), the RS method gives results in satisfactory agreement with the conventional FFT multi-slice (FFTMS) method, but saving coputational time and avoiding the computing divergence that may arise in the RS method.</p> <br/>Acta Physica Sinica. 1989 38(9): 1521-1526. Published 2005-07-08 Author(s): WANG YUAN-MING, CHEN JIANG-HUA, HU TIAN-BAO <br/><p>In a detailed study of the problem of induced numerical artifacts in the Real Space (RS) High Resolution Electron Microscopy (HREM) image simulation, a δ-ε criterion in the RS method for simulating HREM images has been derived. This condition imposes a practical limitation in choosing the sampling interval δ and the slice thickness ε for the RS method. It has been found that when the δ-ε condition is satisfied and a much more accurate formula is used for calculating the propagating factor p(r), the RS method gives results in satisfactory agreement with the conventional FFT multi-slice (FFTMS) method, but saving coputational time and avoiding the computing divergence that may arise in the RS method.</p> <br/>Acta Physica Sinica. 1989 38(9): 1521-1526. Published 2005-07-08 A NEW DEVELOPMENT IN THE REAL SPACE HIGH RESOLU-TION ELECTRON MICROSCOPE SIMULATION METHOD WANG YUAN-MING, CHEN JIANG-HUA, HU TIAN-BAO 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1521-1526. article doi:10.7498/aps.38.1521 10.7498/aps.38.1521 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1521 1521-1526 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1527 Author(s): XU HUI-FANG, LUO GU-FENG, HU MEI-SHENG, CHEN JUN <br/><p>An HRTEM study was carried out for the orthoclase (Or65 Ab21 An11) taken from the augite-mozonite deposit in Wuliang, Shandong Province. The results showed that this material consists of superlattice with long period. The relationship between extended cell parameter and triclinic subcell parameter is as follows: a=atc, b = 8d010≈8btc c= ctc, β= βtc (tc represents the triclinic subcell).The orthoclase consists of a series of triclinic domains. It is the intermediate modulated structure formed in the process of phase transformation of potassic feldspar horn C2/m symmetry to C1 Symmetry through the ordering of Si and Al in the te-terahedra.</p> <br/>Acta Physica Sinica. 1989 38(9): 1527-1529. Published 2005-07-08 Author(s): XU HUI-FANG, LUO GU-FENG, HU MEI-SHENG, CHEN JUN <br/><p>An HRTEM study was carried out for the orthoclase (Or65 Ab21 An11) taken from the augite-mozonite deposit in Wuliang, Shandong Province. The results showed that this material consists of superlattice with long period. The relationship between extended cell parameter and triclinic subcell parameter is as follows: a=atc, b = 8d010≈8btc c= ctc, β= βtc (tc represents the triclinic subcell).The orthoclase consists of a series of triclinic domains. It is the intermediate modulated structure formed in the process of phase transformation of potassic feldspar horn C2/m symmetry to C1 Symmetry through the ordering of Si and Al in the te-terahedra.</p> <br/>Acta Physica Sinica. 1989 38(9): 1527-1529. Published 2005-07-08 HRTEM STUDY OF THE SUPERLATTICE ORTHOCLASE XU HUI-FANG, LUO GU-FENG, HU MEI-SHENG, CHEN JUN 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1527-1529. article doi:10.7498/aps.38.1527 10.7498/aps.38.1527 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1527 1527-1529 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1530 Author(s): MA HAI-MING, LI FU-MING <br/><p>In this paper, we report the experimental and theorical results of self-transmission of pi-cosecond light pulses of 1 μm in undoped semi-insulating GaAs at Brewster angle incidence. The best fitting density of the deep level EL2 is 1.2×l016cm-3, the two-photon absorption coefficient is 29 cm/GW and the free-carrier cross section is 2.7×10-17 cm2.</p> <br/>Acta Physica Sinica. 1989 38(9): 1530-1533. Published 2005-07-08 Author(s): MA HAI-MING, LI FU-MING <br/><p>In this paper, we report the experimental and theorical results of self-transmission of pi-cosecond light pulses of 1 μm in undoped semi-insulating GaAs at Brewster angle incidence. The best fitting density of the deep level EL2 is 1.2×l016cm-3, the two-photon absorption coefficient is 29 cm/GW and the free-carrier cross section is 2.7×10-17 cm2.</p> <br/>Acta Physica Sinica. 1989 38(9): 1530-1533. Published 2005-07-08 SELF-TRANSMISSION OF PICOSECOND LIGHT PULSES IN GaAs MA HAI-MING, LI FU-MING 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1530-1533. article doi:10.7498/aps.38.1530 10.7498/aps.38.1530 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1530 1530-1533 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1534 Author(s): FU CHUN-YIN, LU YONG-LING, ZENG SHU-RONG <br/><p>Ce has been introduced into single crystal Si by means of vacuum deposition of Ce onto Si wafer, and then annealing at 1050℃ for 20 hours in vacuum.In the annealing process, Ce-Si alloy was formed on the surface at first, and then the Ce atorms diffused into Si and produced a diffusion region of Ce with thickness about 4.5 μm. The concentration profile of Ce was determined by SIMS. The diffusion coefficient of Ce in Si at 1050℃ was obtained as 3.9×10-13 cm2/s. The average resistivity ρ of the Ce diffusion layer was measured from 77K to 450K.</p> <br/>Acta Physica Sinica. 1989 38(9): 1534-1539. Published 2005-07-08 Author(s): FU CHUN-YIN, LU YONG-LING, ZENG SHU-RONG <br/><p>Ce has been introduced into single crystal Si by means of vacuum deposition of Ce onto Si wafer, and then annealing at 1050℃ for 20 hours in vacuum.In the annealing process, Ce-Si alloy was formed on the surface at first, and then the Ce atorms diffused into Si and produced a diffusion region of Ce with thickness about 4.5 μm. The concentration profile of Ce was determined by SIMS. The diffusion coefficient of Ce in Si at 1050℃ was obtained as 3.9×10-13 cm2/s. The average resistivity ρ of the Ce diffusion layer was measured from 77K to 450K.</p> <br/>Acta Physica Sinica. 1989 38(9): 1534-1539. Published 2005-07-08 INTRODUCTION OF Ce INTO Si AND THE DIFFUSION COEFFICIENT OF Ce IN Si FU CHUN-YIN, LU YONG-LING, ZENG SHU-RONG 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1534-1539. article doi:10.7498/aps.38.1534 10.7498/aps.38.1534 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1534 1534-1539 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1540 Author(s): LI YU-ZHANG, XU ZHONG-YING, GE WEI-KUN, XU JI-SONG, ZHENG BAO-ZHEN, ZHUANG WEI-HUA <br/><p>Considering the phonon absorption and the phonon emission, we solve the equation for average energy loss rate of carriers and the hot phonon Boltzmann equation. We find that τavg is a sum of the electron phonon interaction time constant and the nonequilibrium phonon. decay time.</p> <br/>Acta Physica Sinica. 1989 38(9): 1540-1544. Published 2005-07-08 Author(s): LI YU-ZHANG, XU ZHONG-YING, GE WEI-KUN, XU JI-SONG, ZHENG BAO-ZHEN, ZHUANG WEI-HUA <br/><p>Considering the phonon absorption and the phonon emission, we solve the equation for average energy loss rate of carriers and the hot phonon Boltzmann equation. We find that τavg is a sum of the electron phonon interaction time constant and the nonequilibrium phonon. decay time.</p> <br/>Acta Physica Sinica. 1989 38(9): 1540-1544. Published 2005-07-08 NONEQUILIBRIUM PHONON EFFECTS IN HOT CARRIER RELAXATION PROCESSES OF MULTIPLE QUANTUM WELL STRUCTURES LI YU-ZHANG, XU ZHONG-YING, GE WEI-KUN, XU JI-SONG, ZHENG BAO-ZHEN, ZHUANG WEI-HUA 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1540-1544. article doi:10.7498/aps.38.1540 10.7498/aps.38.1540 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1540 1540-1544 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1545 Author(s): PENG JIN-SHENG, HUANG XIANG-YOU, LIU WU <br/><p>A theory describing the resonance fluorescance of atoms in strong magnetic field is proposed. A general expression of spectrum distribution for this resonance fluorescence is given and the relation between the spectrum and the magnitude of the magnetic field is examined.</p> <br/>Acta Physica Sinica. 1989 38(9): 1545-1550. Published 2005-07-08 Author(s): PENG JIN-SHENG, HUANG XIANG-YOU, LIU WU <br/><p>A theory describing the resonance fluorescance of atoms in strong magnetic field is proposed. A general expression of spectrum distribution for this resonance fluorescence is given and the relation between the spectrum and the magnitude of the magnetic field is examined.</p> <br/>Acta Physica Sinica. 1989 38(9): 1545-1550. Published 2005-07-08 SPECTRUM DISTRIBUTION OF RESONANCE FLUORESCENCE FOR ATOMS IN STRONG MAGNETIC FIELD PENG JIN-SHENG, HUANG XIANG-YOU, LIU WU 2005-07-08 Personal use only, all commercial or other reuse prohibited Acta Physica Sinica. 1989 38(9): 1545-1550. article doi:10.7498/aps.38.1545 10.7498/aps.38.1545 Acta Physica Sinica 38 9 2005-07-08 //m.getgobooth.com/en/article/doi/10.7498/aps.38.1545 1545-1550