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单斜氧化镓( β-Ga 2O 3)材料因其独特而优异的光电特性在日盲紫外探测领域具有广阔的应用前景, 受到国内外研究者的广泛关注. 本研究工作采用射频磁控溅射技术, 在 c面蓝宝石衬底上制备了未掺杂和氮(N)掺杂 β-Ga 2O 3薄膜, 研究了N掺杂对 β-Ga 2O 3薄膜结构及光学特性的影响; 在此基础上, 构筑了未掺杂和N掺杂 β-Ga 2O 3薄膜基金属-半导体-金属(metal-semiconductor-metal, MSM)型日盲紫外探测器, 并讨论了N掺杂影响器件性能的物理机制. 结果表明, N掺杂会导致 β-Ga 2O 3薄膜表面形貌变得相对粗糙, 且会促使 β-Ga 2O 3薄膜由直接带隙向间接带隙转变. 所有器件均表现出较高的稳定性和日盲特性, 相比之下, N掺杂 β-Ga 2O 3薄膜器件能展现出较低的暗电流和更快的光响应速度(响应时间和恢复时间分别为40和8 ms), 与氧空位相关缺陷的抑制密切相关. 本研究对开发新型的高性能日盲紫外探测器具有一定的借鉴意义.β-Ga 2O 3-based deep-ultraviolet photodetector (PD) has versatile civil and military applications especially due to its inherent solar-blindness. In this work, pristine and N-doped β-Ga 2O 3thin films are prepared on c-plane sapphire substrates by radio frequency magnetron sputtering. The influences of N impurity on the micromorphology, structural and optical properties of β-Ga 2O 3film are investigated in detail by scanning electron microscopy, X-ray diffraction, and Raman spectra. The introduction of N impurities not only degrades the crystal quality of β-Ga 2O 3films, but also affects the surface roughness. The β-Ga 2O 3films doped with N undergoes a transition from a direct optical band gap to an indirect optical band gap. Then, the resulting metal-semiconductor-metal (MSM) PD is constructed. Comparing with the pure β-Ga 2O 3-based photodetector, the introduction of N impurities can effectively depress dark current and improve response speed of the β-Ga 2O 3device. The N-doped β-Ga 2O 3-based photodetector achieves a dark current of 1.08 × 10 –11A and a fast response speed (rise time of 40 ms and decay time of 8 ms), which can be attributed to the decrease of oxygen vacancy related defects. This study demonstrates that the acceptor doping provides a new opportunity for producing ultraviolet photodetectors with fast response for further practical applications.
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Keywords:
- β-Ga2O3films/
- N-doped/
- deep-ultraviolet photodetectors/
- fast response
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Sample FWHM of (–201) peak/(°) FWHM of 201.4 cm–1
peak/cm–1A 0.38 2.6 B 0.51 3.08 C 0.39 2.9 D 0.58 3.14 
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Samples Growth Idark/nA τr/s τd/s Ref. β-Ga2O3 Sputtering 0.11 (10 V) 0.31/1.52 0.05/0.91 [9] β-Ga2O3 MOCVD 34 (10 V) 7.30 8.05 [40] β-Ga2O3 PLD ~1.2 0.59/2.4 0.15/1.6 [41] a-Ga2O3 Sputtering 0.3386 (10 V) 0.41/2.04 0.02/0.35 [42] Ga2O3:Zn Sputtering 45 (10 V) 17.2/1.23 4.03/46.10 [38] Ga2O3:Zn MOCVD 23 (30 V) 3.2 1.4 [43] Ga2O3:N CVD ~0.1 (5 V) 0.01 0.01 [24] Ga2O3:Mg Sputtering 0.0041 (10 V) 0.33/8.84 0.02 [34] Ga2O3:Ce PLD — 0.87/10.81 0.54/13.98 [32] α/β-Ga2O3 Sol–gel 0.125 (15 V) 0.04/0.87 0.02/1.00 [44] β-Ga2O3 Sputtering 0.56 (10 V) 0.51/3.04 0.07/0.08 This work Ga2O3:N Sputtering 0.0108 (10 V) 0.04/2.38 0.008/0.29 This work 下载:
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[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44]
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