-
用自制的总电流谱仪研究了Si(100)2×1清洁表面以及H原子饱和吸附后的Si(100)1×1-2H双氢化相表面的电子态。在清洁表面上测得的空电子态位于价带顶以上0.7eV处,而占有电子态则在价带顶以下0.25,8.4和近12eV处。在双氢化相表面上还观测到处于价带顶以下两个诱导表面态。Electronic states of Si(100)2×1 clean surface and Si(100)1×1-2H surface are studied with total current spectrometer. The occupied surface states are at 0.25, 8.4 and near 12 eV below thevalence band maximum, while the unoccupied surface states are at 0.7 eV above the valence band maximum. Two induced surface states of Si(100)1×1-2H are observed below the valence band maximum.
计量
- 文章访问数:6577
- PDF下载量:548
- 被引次数:0
下载: