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    张喜田, 肖芝燕, 张伟力, 高 红, 王玉玺, 刘益春, 张吉英, 许 武

    A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films

    Zhang Xi-Tian, Xiao Zhi-Yan, Zhang Wei-Li, Gao Hong, Wang Yu-Xi, Liu Yi-Chun, Zhang Ji-Ying, Xu Wu
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    • 报道了利用低压-金属有机物化学气相沉积技术生长纳米ZnS薄膜,然后,将ZnS薄膜在氧气中于800℃温度下进行热氧化制备高质量纳米ZnO薄膜.x射线衍射结果表明,纳米ZnO薄膜具有六角纤锌矿多晶结构.室温下观察到一束强的紫外(3.26 eV) 光致发光和很弱的深能级发射.根据激子峰的半高宽度与温度的关系确定了激子-纵向光学声子(LO)的耦合强度(ГLO).由于量子限域效应使ГLO减少较多.
      In this paper, we report the photoluminescence from high-quality nanocrystalline ZnO thin films. The high-quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800℃, which are deposited by low-pressure metal-organic chemical vapor deposition technique. X-ray diffraction indicated that the nanocrystalline ZnO thin films have a polycrystalline hexagonal wurtzite structure. A strong ultraviolet emission peak at 3.26 eV was observed and the deep-level emission band was barely observable at room temperature. The strength (ΓLO) of the exciton-longitudinal-optical (LO)-phonon coupling is deduced from the temperature dependence of the full width at half maximum of the fundamental excitonic peak. ΓLO is reduced greatly due to the quantum confinement effect.
        • 基金项目:中国科学院百人计划、国家自然科学基金(批准号:69896260)、黑龙江省自然科学基金(批准号:A02-06)、国家教育部科学技术研究重点项目及黑龙江省普通高等学校骨干教师创新能力资助计划资助的课题.
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      出版历程
      • 收稿日期:2002-04-16
      • 修回日期:2002-08-10
      • 刊出日期:2005-04-03

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