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    钟春良, 耿魁伟, 姚若河

    S-shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell

    Zhong Chun-Liang, Geng Kui-Wei, Yao Ruo-He
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    • 通过异质结界面分析与 AMPS 模拟计算研究了 a-Si:H/c-Si 异质结太阳电池在低温工作、a-Si:H 层低掺杂、高价带补偿以及高界面态时光态 J-V 曲线出现 S-Shape 现象的物理过程,总结了 S-Shape 现象的物理原因.分析结果表明,当空穴输运受到界面势垒的限制时,空穴在 c-Si 界面附近聚集,能带重新分配,c-Si 耗尽区的电场减小,更多的电子从 c-Si 准中性区反转至 c-Si 界面及耗尽区与空穴复合,复合速率显著增大,光电流的损失显著增大,光态 J-V<
      In this paper the physical mechanism of the S-shaped J-V characteristics of (p) a-Si:H/(n) c-Si heterojunction solar cell at low working temperatures, low impurity concentrations in the a-Si:H layer, high valence band offsets or high interface defect densities is studied by heterojunction interface analysis and AMPS simulations. The results show that the barrier at the amorphous/crystalline interface hinders the collection of photogenerated holes. A high hole accumulation at the interface, in combination, causes a shift of the depletion region from the c-Si into the a-Si:H. This leads to the electric field decreasing, and the enhanced recombination inside the c-Si depletion region causes a significant current loss. It results in the S-shaped J-V characteristics.
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      • 文章访问数:9979
      • PDF下载量:1123
      • 被引次数:0
      出版历程
      • 收稿日期:2009-11-08
      • 修回日期:2010-01-06
      • 刊出日期:2010-09-15

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