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Chen Zhao-Liang, Lu Da-Biao, Ye Xu-Bin, Zhao Hao-Ting, Zhang Jie, Pan Zhao, Chi Zhen-Hua, Cui Tian, Shen Yao, Long You-Wen.High-pressure synthesized perovskite-type CeTaN2O and its magnetic and electrical properties. Acta Physica Sinica, 2024, 73(8): 080702.doi:10.7498/aps.73.20240025 |
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Zhao Shi-Ping, Zhang Xin, Liu Zhi-Hui, Wang Quan, Wang Hua-Lin, Jiang Wei-Wei, Liu Chao-Qian, Wang Nan, Liu Shi-Min, Cui Yun-Xian, Ma Yan-Ping, Ding Wan-Yu, Ju Dong-Ying.Influence of low-energy ammonia ion/group diffusion on electrical properties of indium tin oxide film. Acta Physica Sinica, 2020, 69(23): 236801.doi:10.7498/aps.69.20200860 |
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Wang Chun-Jie, Wang Yue, Gao Chun-Xiao.Grain boundary electrical characteristics for rutile TiO2under pressure. Acta Physica Sinica, 2019, 68(20): 206401.doi:10.7498/aps.68.20190630 |
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Fan Da-Zhi, Liu Gui-Li, Wei Lin.Electron-theoretical study on the influences of torsional deformation on electrical and optical properties of O atom absorbed graphene. Acta Physica Sinica, 2017, 66(24): 246301.doi:10.7498/aps.66.246301 |
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Zhu Yan-Xu, Cao Wei-Wei, Xu Chen, Deng Ye, Zou De-Shu.Effect of different ohmic contact pattern on GaN HEMT electrical properties. Acta Physica Sinica, 2014, 63(11): 117302.doi:10.7498/aps.63.117302 |
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Wang Yue, Zhang Feng-Xia, Wang Chun-Jie, Gao Chun-Xiao.DC and AC electrical properties of ZnSe under high pressure. Acta Physica Sinica, 2014, 63(21): 216401.doi:10.7498/aps.63.216401 |
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Guo Hong-Li, Yang Huan-Yin, Tang Huan-Fang, Hou Hai-Jun, Zheng Yong-Lin, Zhu Jian-Guo.Effects of high pressure annealing technique on the structure, morphology and electric properties of 0.65PMN-0.35PT thin films. Acta Physica Sinica, 2013, 62(13): 130704.doi:10.7498/aps.62.130704 |
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Liu Jian-Peng, Zhu Yan-Xu, Guo Wei-Ling, Yan Wei-Wei, Wu Guo-Qing.The effect of ITO annealing on electrical characteristic of GaN based LED. Acta Physica Sinica, 2012, 61(13): 137303.doi:10.7498/aps.61.137303 |
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Sun Wei-Feng, Zheng Xiao-Xia.First-principles study of interface relaxation effects on interface structure, band structure and optical property of InAs/GaSb superlattices. Acta Physica Sinica, 2012, 61(11): 117301.doi:10.7498/aps.61.117301 |
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He Xu, He Lin, Tang Ming-Jie, Xu Ming.Effects of the vacancy point-defect on electronic structure and optical properties of LiF under high pressure: A first principles investigation. Acta Physica Sinica, 2011, 60(2): 026102.doi:10.7498/aps.60.026102 |
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Wu Bao-Jia, Han Yong-Hao, Peng Gang, Liu Cai-Long, Wang Yue, Gao Chun-Xiao.Research of in-situ electrical property of micron dimension ZnO under high pressure. Acta Physica Sinica, 2010, 59(6): 4235-4239.doi:10.7498/aps.59.4235 |
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Tian Peng, Huang Li-Rong, Fei Shu-Ping, Yu Yi, Pan Bin, Xu Wei, Huang De-Xiu.Effect of different cap layers on the structure and optical properties of InAs/GaAs self-assembled quantum dot. Acta Physica Sinica, 2010, 59(8): 5738-5742.doi:10.7498/aps.59.5738 |
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Fu Xiu-Li, Tang Wei-Hua, Peng Zhi-Jian.Influence of doping level on electrical properties of ZnO-based composite varistor. Acta Physica Sinica, 2008, 57(9): 5844-5852.doi:10.7498/aps.57.5844 |
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He Kai-Hua, Zheng Guang, Lü Tao, Chen Gang, Ji Guang-Fu.Effect of high pressures on structural, electronic and optical properties of BN nanotube. Acta Physica Sinica, 2006, 55(6): 2908-2913.doi:10.7498/aps.55.2908 |
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CHENG SHAN-HUA, NING ZHAO-YUAN, KAN JIAN, MA CHUN-LAN, YE CHAO.EFFECTS OF DEPOSITION TEMPERATURE ON ELECTRICAL PROPERTIES OF HYDROGENATED AMORP HOUS CARBON FILMS. Acta Physica Sinica, 2000, 49(10): 2041-2046.doi:10.7498/aps.49.2041 |
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