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Wang Ning, Wang Bao-Chuan, Guo Guo-Ping.New progress of silicon-based semiconductor quantum computation. Acta Physica Sinica, 2022, 71(23): 230301.doi:10.7498/aps.71.20221900 |
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Cheng Zhe.Thermal science and engineering in third-generation semiconductor materials and devices. Acta Physica Sinica, 2021, 70(23): 236502.doi:10.7498/aps.70.20211662 |
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Zhang Ning, Xu Kai-Kai, Chen Yan-Xu, Zhu Kun-Feng, Zhao Jian-Ming, Yu Qi.Application prospect of metal-oxide-semiconductor silicon light emitting devices in integrated circuits. Acta Physica Sinica, 2019, 68(16): 167803.doi:10.7498/aps.68.20191004 |
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Luo Jun-Wei, Li Shu-Shen.Semiconductor Materials Genome Initiative: silicon-based light emission material. Acta Physica Sinica, 2015, 64(20): 207803.doi:10.7498/aps.64.207803 |
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Hong Xia, Guo Xiong-Bin, Fang Xu, Li Kan, Ye Hui.Design of silicon based germanium metal-semiconductor-metal photodetector enhanced by surface plasmon resonance. Acta Physica Sinica, 2013, 62(17): 178502.doi:10.7498/aps.62.178502 |
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Cao Lei, Liu Hong-Xia, Wang Guan-Yu.Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica, 2012, 61(1): 017105.doi:10.7498/aps.61.017105 |
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Peng Xian-De, Zhu Tao, Wang Fang-Wei.High temperature annealing treatment on Co doped ZnO bulks. Acta Physica Sinica, 2009, 58(5): 3274-3279.doi:10.7498/aps.58.3274 |
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Zhao Wen-Bin, Zhang Guan-Jun, Yan Zhang.Investigation on surface damage phenomena induced by flashover across semiconductor. Acta Physica Sinica, 2008, 57(8): 5130-5137.doi:10.7498/aps.57.5130 |
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Zhang Wen, Liu Cai-Chi, Wang Hai-Yun, Xu Yue-Sheng, Shi Yi-Qing.The effective viscosity of silicon melt in magnetic field. Acta Physica Sinica, 2008, 57(6): 3875-3879.doi:10.7498/aps.57.3875 |
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REN SHANG-YUAN, MAO DE-QIANG, LI MING-FU.ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅲ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN SI. Acta Physica Sinica, 1986, 35(11): 1457-1464.doi:10.7498/aps.35.1457 |
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YE HONG-JUAN.THE LOCAL DENSITY OF STATES FOR THE NARROW CHANNELS OF THE SEMICONDUCTOR SURFACE. Acta Physica Sinica, 1986, 35(7): 939-943.doi:10.7498/aps.35.939 |
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ZHANG KAI-MING, YE LING, XU YONG-NIAN.ALUMINIUM CHEMISORPTION ON THE SEMICONDUCTOR SURFACES. Acta Physica Sinica, 1982, 31(2): 220-225.doi:10.7498/aps.31.220 |
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GAN ZI-ZHAO, YANG GUO-ZHEN.ON THE THIRD ORDER OPTICAL NONLINEARITY OF SEMICONDUCTORS NEAR ITS ABSORPTION EDGE. Acta Physica Sinica, 1982, 31(2): 237-242.doi:10.7498/aps.31.237 |
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ZHU RU-ZENG.ON THE QUANTUM MECHANICAL TREATMENT OF A DAMPED HARMONIC OSILLATOR. Acta Physica Sinica, 1981, 30(10): 1410-1414.doi:10.7498/aps.30.1410 |
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LIU LIAO, YANG YI-HONG, CHEN FANG-PEI, SHAO JI-QUN.关于“典型时空”的问题讨论. Acta Physica Sinica, 1976, 25(4): 362-366.doi:10.7498/aps.25.362 |
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ZHANG EN-QIU.THEORY OF THERMIONIC EMISSION (I)——A CRITICISM OF THE SEMI-CONDUCTOR MODEL OF THE OXIDE-COATED CATHODE. Acta Physica Sinica, 1974, 23(5): 43-52.doi:10.7498/aps.23.43 |
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CHANG PEI-KUNG, SHIUH GEN-TWEN.AN ANALYSIS FOR THE OPERATION CURRENT RANGE OF INJECTION LASER. Acta Physica Sinica, 1966, 22(8): 930-944.doi:10.7498/aps.22.930 |
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CHANG YU-WON, YU QI-HUA.THE CALCULATION OF THE ENERGY-BAND STRUCTURE OF SOME SEMICONDUCTORS WITH THE PSEUDOPOTENTIAL PERTURBATION METHOD (APPLICATION TO GaAs, GaP AND Ga[As1-xPx]ALLOY). Acta Physica Sinica, 1965, 21(6): 1162-1169.doi:10.7498/aps.21.1162 |
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PU FU-CHO, CHENG CHIN-CHI.SPIN CONFIGURATION OF MAGNETIC SUBSTANCES. Acta Physica Sinica, 1962, 18(3): 135-142.doi:10.7498/aps.18.135 |
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CHEN SHIN-BI.ON THE PROBLEMS OF STORAGE TIME OF DRIFT TRANSISTOR OPERATING IN SATURATION REGION. Acta Physica Sinica, 1959, 15(7): 353-367.doi:10.7498/aps.15.353 |