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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi.Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801.doi:10.7498/aps.64.107801 |
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Wang Tian-Shu, Zhang Rui-De, Guan Zhe, Ba Ke, Zu Yun-Xiao.Properties of memristor in RLC circuit and diode circuit. Acta Physica Sinica, 2014, 63(17): 178101.doi:10.7498/aps.63.178101 |
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Zhai Dong-Yuan, Zhao Yi, Cai Yin-Fei, Shi Yi, Zheng You-Dou.Effect of the trench shape on the electrical properties of silicon based trench barrier schottky diode. Acta Physica Sinica, 2014, 63(12): 127201.doi:10.7498/aps.63.127201 |
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Chen Yi-Xin, Shen Guang-Di, Gao Zhi-Yuan, Guo Wei-Ling, Zhang Guang-Chen, Han Jun, Zhu Yan-Xu.Relationship between light efficiency and juction temperature of high power AlGaInP light-emitting diode. Acta Physica Sinica, 2011, 60(8): 087206.doi:10.7498/aps.60.087206 |
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Fan Guo-Li, Jiang Yue-Song, Liu Li, Li Fang.Analysis on high frequency performance of THz GaAs Schottky mixer diode. Acta Physica Sinica, 2010, 59(8): 5374-5381.doi:10.7498/aps.59.5374 |
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Wang Yan-Xin, Zhang Qi-Feng, Sun Hui, Chang Yan-Ling, Wu Jin-Lei.Fabrication of ZnO nanowire-based diodes and their light-emitting properties. Acta Physica Sinica, 2008, 57(2): 1141-1144.doi:10.7498/aps.57.1141 |
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