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Zhou Ji-Yang, Li Qiang, Xu Jin-Shi, Li Chuan-Feng, Guo Guang-Can.Theoretical calculation of fiber cavity coupling silicon carbide membrance. Acta Physica Sinica, 2022, 71(6): 060303.doi:10.7498/aps.71.20211797 |
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Wang Fu, Zhou Yi, Gao Shi-Xin, Duan Zhen-Gang, Sun Zhi-Peng, Wang Jun, Zou Yu, Fu Bao-Qin.Molecular dynamics study of effects of point defects on thermal conductivity in cubic silicon carbide. Acta Physica Sinica, 2022, 71(3): 036501.doi:10.7498/aps.71.20211434 |
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Hua Ye, Wan Hong, Chen Xing-Yu, Wu Ping, Bai Shu-Xin.Influence of surface microstructure on explosive electron emission properties of graphite cathode doped by silicon carbide whiskers. Acta Physica Sinica, 2016, 65(16): 168102.doi:10.7498/aps.65.168102 |
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Gao Shang-Peng, Zhu Tong.Quasiparticle band structure calculation for SiC using self-consistent GW method. Acta Physica Sinica, 2012, 61(13): 137103.doi:10.7498/aps.61.137103 |
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Zhou Nai-Gen, Hong Tao, Zhou Lang.A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica, 2012, 61(2): 028101.doi:10.7498/aps.61.028101 |
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Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong.Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308.doi:10.7498/aps.58.3302 |
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Song Jiu-Xu, Yang Yin-Tang, Liu Hong-Xia, Zhang Zhi-Yong.First-principles study of the electonic structure of nitrogen-doped silicon carbide nanotubes. Acta Physica Sinica, 2009, 58(7): 4883-4887.doi:10.7498/aps.58.4883 |
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