| [1] |
Zhao Jing, Yu Hui-Long, Liu Wei-Wei, Guo Jing.Analysis of the relation between spectral response and absorptivity of GaAs photocathode. Acta Physica Sinica, 2017, 66(22): 227801.doi:10.7498/aps.66.227801 |
| [2] |
Fan Zheng-Fu, Tan Zhi-Yong, Wan Wen-Jian, Xing Xiao, Lin Xian, Jin Zuan-Ming, Cao Jun-Cheng, Ma Guo-Hong.Study on ultrafast dynamics of low-temperature grown GaAs by optical pump and terahertz probe spectroscopy. Acta Physica Sinica, 2017, 66(8): 087801.doi:10.7498/aps.66.087801 |
| [3] |
Zhao You-Wen, Dong Zhi-Yuan.Generation and suppression of deep level defects in InP. Acta Physica Sinica, 2007, 56(3): 1476-1479.doi:10.7498/aps.56.1476 |
| [4] |
Yang Jian-Song, Li Bao-Xing.Study of the stability of gallium-arsenic ion clusters. Acta Physica Sinica, 2006, 55(12): 6562-6569.doi:10.7498/aps.55.6562 |
| [5] |
Xu Yue-Sheng, Yang Xin-Rong, Wang Hai-Yun, Tang Lei, Liu Cai-Chi, Wei Xin, Qin Dao-Zhi.Micro-distribution of carbon in semi-insulating gallium arsenide. Acta Physica Sinica, 2005, 54(4): 1904-1908.doi:10.7498/aps.54.1904 |
| [6] |
Xu Yue-Sheng, Tang Lei, Wang Hai-Yun, Liu Cai-Chi, Hao Jing-Chen.Study on the cell structure in semi-insulation gallium arsenide. Acta Physica Sinica, 2004, 53(2): 651-655.doi:10.7498/aps.53.651 |
| [7] |
Liu Hong-Xia, Zheng Xue-Feng, Hao Yao.. Acta Physica Sinica, 2002, 51(1): 163-166.doi:10.7498/aps.51.163 |
| [8] |
QIAO HAO, XU ZHI-ZHONG, ZHANG KAI-MING.DEEP LEVELS IN STRAINED Si AND Ge. Acta Physica Sinica, 1993, 42(11): 1830-1835.doi:10.7498/aps.42.1830 |
| [9] |
MA HAI-MING, LI FU-MING.SELF-TRANSMISSION OF PICOSECOND LIGHT PULSES IN GaAs. Acta Physica Sinica, 1989, 38(9): 1530-1533.doi:10.7498/aps.38.1530 |
| [10] |
WANG DE-NING, SHEN PENG-NIAN, WANG WEI-YUAN.THE EFFECT OF DEEP LEVEL TRAP ON PHOTO-TRANSIENT CHARACTERISTICS, EQUIVALENT NOISE CURRENT AND INCREMENT OF DRAIN CURRENT FOR FET. Acta Physica Sinica, 1987, 36(10): 1264-1272.doi:10.7498/aps.36.1264 |
| [11] |
CHENG ZHAO-NIAN, WANG WEI-YUAN.ELECTRONIC STOPPING POWER OF B+ IMPLANTATION IN GaAs. Acta Physica Sinica, 1985, 34(7): 968-972.doi:10.7498/aps.34.968 |
| [12] |
FU CHUN-YIN, LU YONG-LING, ZENG SHU-RONG.RESPONSE OF THE MINORITY CARRIER IN THE SEMICONDUCTORS DLTS UNDER MAJORITY CARRIER PULSE CONDITION. Acta Physica Sinica, 1985, 34(12): 1559-1566.doi:10.7498/aps.34.1559 |
| [13] |
MO DANG, PAN SHI-HONG, W. E. SPICER, I. LINDAU.PHOTOELECTRON SPECTROSCOPY FOR VALENCE BAND OF SILVER AND GOLD FILMS ON GALLIUM ARSENIDE. Acta Physica Sinica, 1983, 32(11): 1467-1470.doi:10.7498/aps.32.1467 |
| [14] |
CHENG ZHAO-NIAN, ZHU WEN-YU, WANG WEI-YUAN.CALCULATION OF RANGE STATISTIC PARAMETERS FOR IONS IMPLANTED IN GaAs. Acta Physica Sinica, 1982, 31(7): 922-931.doi:10.7498/aps.31.922 |
| [15] |
WANG WEI-YUAN, QIAO YONG, LIN CHENG-LU, LUO CHAO-WEI, ZHOU YONG-QUAN.SILICON IMPLANTATION IN SEMI-INSULATING GaAs SUBSTRATE. Acta Physica Sinica, 1982, 31(1): 71-77.doi:10.7498/aps.31.71 |
| [16] |
WANG WEI-YUAN, XU JING-YANG, NI QI-MIN, TAN RU-HUAN, LIU YUE-QIN, QIU YUE-YING.A STUDY OF PROTON IMPLANTATION FOR GaAs. Acta Physica Sinica, 1979, 28(5): 86-95.doi:10.7498/aps.28.86 |
| [17] |
GAAS SINGLE CRYSTAL RESEARCH GROUP.TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHOD. Acta Physica Sinica, 1976, 25(2): 179-180.doi:10.7498/aps.25.179 |
| [18] |
.. Acta Physica Sinica, 1965, 21(5): 1077-1079.doi:10.7498/aps.21.1077 |
| [19] |
YUAN KONG, CHEN NING-CHIANG.PRESSURE DEPENDENCE OF SOME TUNNELING PARAMETERS IN NARROW GALLIUM ARSENIDE P-N JUNCTIONS. Acta Physica Sinica, 1964, 20(8): 806-813.doi:10.7498/aps.20.806 |
| [20] |
SHAW NAN, LIU YI-HUAN.X-RAY MEASUREMENT OF THE THERMAL EXPANSION OF GERMANIUM, SILICON, INDIUM ANTIMONIDE AND GALLIUM ARSENIDE. Acta Physica Sinica, 1964, 20(8): 699-704.doi:10.7498/aps.20.699 |
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