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Ji Chuan, Xu Jin.Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer. Acta Physica Sinica, 2012, 61(23): 236102.doi:10.7498/aps.61.236102 |
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Wang Yong-Zhi, Xu Jin, Wang Na-Ting, Ji Chuan, Zhang Guang-Chao.Effect of copper precipitation on the formation of denuded zone in Czchralski silicon. Acta Physica Sinica, 2012, 61(1): 016105.doi:10.7498/aps.61.016105 |
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Liu Hong-Jie, Huang Jin, Wang Feng-Rui, Zhou Xin-Da, Jiang Xiao-Dong, Wu Wei-Dong.Effect of thermal stresses on fused silica surface on the laser induced damage. Acta Physica Sinica, 2010, 59(2): 1308-1313.doi:10.7498/aps.59.1308 |
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Xu Jin, Li Fu-Long, Yang De-Ren.Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy. Acta Physica Sinica, 2007, 56(7): 4113-4116.doi:10.7498/aps.56.4113 |
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Hao Qiu-Yan, Liu Cai-Chi, Sun Wei-Zhong, Zhang Jian-Qiang, Sun Shi-Long, Zhao Li-Wei, Zhang Jian-Feng, Zhou Qi-Gang, Wang Jing.Effect of high temperature rapid thermal annealing on flow pattern defects in heavily Sb-doped CZSi. Acta Physica Sinica, 2005, 54(10): 4863-4866.doi:10.7498/aps.54.4863 |
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Xu Jin, Yang De-Ren, Chu Jia, Ma Xiang-Yang, Que Duan-Lin.Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope. Acta Physica Sinica, 2004, 53(2): 550-554.doi:10.7498/aps.53.550 |
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ZHONG ZHI-PING, ZHANG WEI-HUA, XU KE-ZUN, FENG REN-FEI, LI JIA-MING.A STUDY OF OPTICAL OSCILLATOR STRENGTHS IN THE VALENCE AND CONTINUUM REGIONS (11.0—19.0 eV) OF MOLECULAR HYDROGEN. Acta Physica Sinica, 1999, 48(5): 816-824.doi:10.7498/aps.48.816 |
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LI MING, MAI ZHEN-HONG, CUI SHU-PAN.CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES. Acta Physica Sinica, 1994, 43(1): 78-83.doi:10.7498/aps.43.78 |
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HUANG YI-SEN, ZHAO QING-LAN.EFFECTS OF STRUCTURE IN RUBIDIUM ACID PHTHALATE (RAP) ON ITS SINGLE CRYSTAL GROWTH HABIT AND DEFECT FORMATION. Acta Physica Sinica, 1991, 40(12): 1960-1965.doi:10.7498/aps.40.1960 |
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GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA.THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1988, 37(1): 152-156.doi:10.7498/aps.37.152 |
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SU FANG, C. LEE, P. C. TAYLOR.ELECTRON SPIN RESONANCE INVESTIGATION ON Si-H BONDS AND H-INDUCED DEFECTS IN SINGLE CRYSTALS OF SILICON. Acta Physica Sinica, 1988, 37(7): 1053-1058.doi:10.7498/aps.37.1053 |
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CHU XI, MAI ZHEN-HONG, DAI DAO-YANG, CUI SHU-FAN, GE PEI-WEN.STUDY ON A PLANE-LIKE PRECIPITATE IN SILICON SINGLE CRYSTAL BY X-RAY TOPOGRAPHIC METHOD. Acta Physica Sinica, 1987, 36(3): 408-410.doi:10.7498/aps.36.408 |
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Duan Pei Gao Ping Tang Ji-you.A STUDY ON AS-GROWN SWIRL DEFECTS IN CZ SILICON CRYSTAL. Acta Physica Sinica, 1987, 36(8): 986-991.doi:10.7498/aps.36.986 |
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GAO YU-ZUN.TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTAL. Acta Physica Sinica, 1984, 33(6): 840-844.doi:10.7498/aps.33.840 |
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HE XIAN-CHANG.EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS. Acta Physica Sinica, 1984, 33(5): 694-695.doi:10.7498/aps.33.694 |
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MAI ZHEN-HONG, CUI SHU-FAN, FU QUAN-GUI, LIN RU-GAN, ZHANG JIN-FU.OBSERVATION ON “AS GROWN” MICRODEFECTS IN CZ SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1983, 32(5): 685-688.doi:10.7498/aps.32.685 |
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YANG CHUAN-ZHENG, ZHU JIAN-SHENG.INVESTIGATION OF THE DEFECTS IN SILICON SINGLE CRYSTALS GROWN BY FLOATING-ZONE METHOD IN THE ATMOSPHERE CONTAINING HYDROGEN. Acta Physica Sinica, 1982, 31(3): 278-284.doi:10.7498/aps.31.278 |
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LIU ZHEN-MAO, WANG GUI-HUA.A DISLOCATION SOURCE IN THE FLOAT-ZONE GROWN SILICON SINGLE CRYSTALS. Acta Physica Sinica, 1980, 29(9): 1164-1179.doi:10.7498/aps.29.1164 |
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JIANG BAI-LIN, SHENG SHI-XIONG, XIAO ZHI-GANG, BAO JIAN-YING.MECHANISM OF THE FORMATION OF THE DEFECTS DURING HEAT TREATMENT IN SINGLE SILICON CRYSTAL GROWN BY FLOATING ZONE METHOD UNDER PURE HYDROGEN. Acta Physica Sinica, 1980, 29(10): 1283-1292.doi:10.7498/aps.29.1283 |
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GAAS SINGLE CRYSTAL RESEARCH GROUP.TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHOD. Acta Physica Sinica, 1976, 25(2): 179-180.doi:10.7498/aps.25.179 |
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