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Xiao Zhi-Feng, Wang Shou-Yu, Dai Ya-Ting, Kang Xin-Miao, Zhang Zhen-Hua, Liu Wei-Fang.Physical mechanism of Ge doping enhanced Ruddlesden-Popper structure quasi-2D Sr3Sn2O7ceramic hybrid improper ferroelectricity. Acta Physica Sinica, 2024, 73(14): 147702.doi:10.7498/aps.73.20240583 |
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Guo Wen-Ti, Huang Lu, Xu Gui-Gui, Zhong Ke-Hua, Zhang Jian-Min, Huang Zhi-Gao.Pressure strain control of electronic structure of intrinsic magnetic topological insulator MnBi2Te4. Acta Physica Sinica, 2021, 70(4): 047101.doi:10.7498/aps.70.20201237 |
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Zhao Ming-Liang, Chen Song, Sun Feng, Zhang Jing, Lin Yan, Zhang Wei-Ru, Wang Wei-Guo.Grain boundary character distributions in Si3N4ceramics. Acta Physica Sinica, 2021, 70(22): 226801.doi:10.7498/aps.70.20210233 |
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Zhang Guan-Jie, Yang Hao, Zhang Nan.Research progress of the investigation of intrinsic and extrinsic origin of piezoelectric materials by X-ray diffraction. Acta Physica Sinica, 2020, 69(12): 127711.doi:10.7498/aps.69.20200301 |
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Lu Yuan-Yuan, Lu Gui-Hua, Zhou Heng-Wei, Huang Yi-Neng.Preparation and properties of spodumene/silicon carbide composite ceramic materials. Acta Physica Sinica, 2020, 69(11): 117701.doi:10.7498/aps.69.20200232 |
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Zhang Yu, Zhou Huan-Ping.Intrinsic stability of organic-inorganic hybrid perovskite. Acta Physica Sinica, 2019, 68(15): 158804.doi:10.7498/aps.68.20190343 |
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Zhu Jie, Ji Meng, Ma Shuang.Influence of asymmetrical angle on crystal lattice strain analysis using Voigt-function method. Acta Physica Sinica, 2018, 67(3): 036102.doi:10.7498/aps.67.20172043 |
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Cao Yu, Zhang Jian-Jun, Li Tian-Wei, Huang Zhen-Hua, Ma Jun, Ni Jian, Geng Xin-Hua, Zhao Ying.Optimization of the longitudinal structure of intrinsic layer in microcrystalline silicon germanium solar cell. Acta Physica Sinica, 2013, 62(3): 036102.doi:10.7498/aps.62.036102 |
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He Long, Song Yun.Numerical study of the superconductor-insulator transition in double-layer graphene driven by disorder. Acta Physica Sinica, 2013, 62(5): 057303.doi:10.7498/aps.62.057303 |
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Wang Guan-Yu, Ma Jian-Li, Zhang He-Ming, Wang Xiao-Yan, Wang Bin.Model of intrinsic carrier concentrationof [110]/(001)-uniaxial strained Si. Acta Physica Sinica, 2011, 60(7): 077105.doi:10.7498/aps.60.077105 |
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Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men, Wang Yue-Hu, Guo Hui.Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layer. Acta Physica Sinica, 2010, 59(5): 3542-3546.doi:10.7498/aps.59.3542 |
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi.Model of intrinsic carrier concentration of strained Si/(001）Si1－xGex. Acta Physica Sinica, 2010, 59(3): 2064-2067.doi:10.7498/aps.59.2064 |
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Han Xiao-Yan, Hou Guo-Fu, Wei Chang-Chun, Zhang Xiao-Dan, Dai Zhi-Hua, Li Gui-Jun, Sun Jian, Chen Xin-Liang, Zhang De-Kun, Xue Jun-Ming, Zhao Ying, Geng Xin-Hua.Optimization of high rate growth high quality μc-Si:H thin films and its application to the solar cells. Acta Physica Sinica, 2009, 58(6): 4254-4259.doi:10.7498/aps.58.4254 |
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Sun Fu-He, Zhang Xiao-Dan, Wang Guang-Hong, Xu Sheng-Zhi, Yue Qiang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying.Influence of boron on the properties of intrinsic microcrystalline silicon thin films. Acta Physica Sinica, 2009, 58(2): 1293-1297.doi:10.7498/aps.58.1293 |
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Chen Xue-Feng, Li Hua-Mei, Li Dong-Jie, Cao Fei, Dong Xian-Lin.Study on slim-loop ferroelectric ceramics for high-power pulse capacitors. Acta Physica Sinica, 2008, 57(11): 7298-7304.doi:10.7498/aps.57.7298 |
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FU GANG, CHEN ZHI-XIONG, SHI BIN.INTRINSIC DEFECTS IN ZnO VARISTOR CERAMICS. Acta Physica Sinica, 1996, 45(5): 850-853.doi:10.7498/aps.45.850 |
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ZHE XIAO-LI, ZHANG HONG-TU.CRACKING DUE TO A PLATE-FORM INCLUSION OF SHEAR TYPE. Acta Physica Sinica, 1983, 32(2): 182-190.doi:10.7498/aps.32.182 |
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