[1] |
Yan Shao-Qi, Gao Ji-Kun, Chen Yue, Ma Yao, Zhu Xiao-Dong.Low-density plasmas generated by electron beams passing through silicon nitride window. Acta Physica Sinica, 2024, 73(14): 144102.doi:10.7498/aps.73.20240302 |
[2] |
Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, Huang Rui.Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices. Acta Physica Sinica, 2014, 63(3): 037801.doi:10.7498/aps.63.037801 |
[3] |
Jiang Qiang, Mao Xiu-Juan, Zhou Xi-Ying, Chang Wen-Long, Shao Jia-Jia, Chen Ming.Influence of applied magnetic field on properties of silicon nitride thin film with light trapping structure prepared by R.F. magnetron sputtering. Acta Physica Sinica, 2013, 62(11): 118103.doi:10.7498/aps.62.118103 |
[4] |
Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting.Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films. Acta Physica Sinica, 2013, 62(3): 037703.doi:10.7498/aps.62.037703 |
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Zou Xiang-Yun, Yuan Jin-She, Jiang Yi-Xiang.The formation mechanism of the silicon nano-clusters embedded in silicon nitride. Acta Physica Sinica, 2012, 61(14): 148106.doi:10.7498/aps.61.148106 |
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Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju.Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica, 2011, 60(6): 066101.doi:10.7498/aps.60.066101 |
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Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin.Raman investigation of ion-implanted ZnO films. Acta Physica Sinica, 2010, 59(7): 4831-4836.doi:10.7498/aps.59.4831 |
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Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng.Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica, 2008, 57(6): 3661-3665.doi:10.7498/aps.57.3661 |
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Fang Shao-Hua, Cheng Xiu-Lan, Huang Ye, Gu Huai-Huai.Investigating the effect of doping amorphous silicon nitride on retention characteristics of SONOS device by DFT calculation. Acta Physica Sinica, 2007, 56(11): 6634-6641.doi:10.7498/aps.56.6634 |
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Chen Zhi-Quan, Kawasuso Atsuo.Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357.doi:10.7498/aps.55.4353 |
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Wang Jiu-Min, Chen Kun-Ji, Song Jie, Yu Lin-Wei, Wu Liang-Cai, Li Wei, Huang Xin-Fan.Double-level charge storage in self-aligned doubly-stacked Si nanocrystals in SiNx dielectric. Acta Physica Sinica, 2006, 55(11): 6080-6084.doi:10.7498/aps.55.6080 |
[12] |
Lu Ting, Zhou Hong-Yu, Ding Xiao-Ji, Wang Xin-Fu, Zhu Guang-Hua.The study of depth distribution for ion with low energy implanted into plant seeds and mechanism of biological effect. Acta Physica Sinica, 2005, 54(10): 4822-4826.doi:10.7498/aps.54.4822 |
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Xie Jing-Yi, Zhou Hong-Yu, Wang Ping, Ding Xiao-Ji, Liu Zhi-Guo, Song Hai, Lu Ting, Zhu Guang-Hua.A study of directional effect of depth-concentration distribution for implanted heavy ions with low energies in dry peanut seeds. Acta Physica Sinica, 2003, 52(10): 2530-2533.doi:10.7498/aps.52.2530 |
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Zhang Gu-Ling, Wang Jiu-Li, Yang Wu-Bao, Fan Song-Hua, Liu Chi-Zi, Yang Si-Ze.TiN coating for inner surface modification by grid enhanced plasma source ion im plantation. Acta Physica Sinica, 2003, 52(9): 2213-2218.doi:10.7498/aps.52.2213 |
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Yu Wei, Liu Li-Hui, Hou Hai-Hong, Ding Xue-Cheng, Han Li, Fu Guang-Sheng.Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition. Acta Physica Sinica, 2003, 52(3): 687-691.doi:10.7498/aps.52.687 |
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TU XIAN-HUA, LI DAO-HUO.BLUE-LIGHT ENHANCEMENT EFFECT IN ION IMPLANTED NANO-Si3N4 QUANTUM DOTS. Acta Physica Sinica, 2000, 49(7): 1383-1385.doi:10.7498/aps.49.1383 |
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ZOU YUN-JUAN, YAN HUI, CHEN GUANG-HUA, JIN YUN-FAN, YANG RU.ION RADIATION DAMAGE OF C60 FILMS. Acta Physica Sinica, 1998, 47(11): 1923-1927.doi:10.7498/aps.47.1923 |
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CHEN JUN-FANG, WANG WEI-XIANG, LIU SONG-HAO, REN ZHAO-XING.MICROSTRUCTURE OF SILICON NITRIDE THIN FILM. Acta Physica Sinica, 1998, 47(9): 1529-1535.doi:10.7498/aps.47.1529 |
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YE CHAO, NING ZHAO-YUAN, MA YUN-XIU, SHEN MING-RONG, WANG HAO, GAN ZHAO-QIANG.DIELECTRIC PROPERTIES OF SiNx FILMS DEPOSITED AT LOW TEMPERATURE. Acta Physica Sinica, 1997, 46(6): 1199-1205.doi:10.7498/aps.46.1199 |
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YU YUE-HUI, LIN CHENG-LU, ZHANG SHUN-KAI, FANG ZI-ZEI, ZOU SHI-CHANG.AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION. Acta Physica Sinica, 1989, 38(12): 1996-2002.doi:10.7498/aps.38.1996 |