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Liang De-Shan, Huang Hou-Bing, Zhao Ya-Nan, Liu Zhu-Hong, Wang Hao-Yu, Ma Xing-Qiao.Size effect of topological charge in disc-like nematic liquid crystal films. Acta Physica Sinica, 2021, 70(4): 044202.doi:10.7498/aps.70.20201623 |
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Hao Di, Guo San-Dong, Ma Zhi-Yuan, Hui Yu-Ting.The gravitational magnetic component and its magnetic effects in linearized theory of gravity. Acta Physica Sinica, 2020, 69(13): 130401.doi:10.7498/aps.69.20191673 |
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Wang Ning, Dong Gang, Yang Yin-Tang, Chen Bin, Wang Feng-Juan, Zhang Yan.Study of the grain size effects on electrical resistivity model for ultrathin (10-50 nm) Cu films. Acta Physica Sinica, 2012, 61(1): 016802.doi:10.7498/aps.61.016802 |
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Hao Da-Peng, Tang Gang, Xia Hui, Han Kui, Xun Zhi-Peng.Finite size effect of the ballistic depositionmodel with shadowing. Acta Physica Sinica, 2011, 60(3): 038102.doi:10.7498/aps.60.038102 |
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Zhang Chun-Zu, Zhang Ying, Zhou Zhi-Dong.Size effect on phase transition temperature of epitaxial ferroelectric films. Acta Physica Sinica, 2010, 59(9): 6620-6625.doi:10.7498/aps.59.6620 |
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Zhang Ran, He Jun, Peng Zeng-Hui, Xuan Li.Molecular dynamics simulation of the rotational viscosity and its odd-even effect of nematic liquid crystals nCB(4-n-alkyl-4′-cyanobiphenyls, n=5—8). Acta Physica Sinica, 2009, 58(8): 5560-5566.doi:10.7498/aps.58.5560 |
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Wu Xiao-Yan, Kong Ming, Li Ge-Yang, Zhao Wen-Ji.Crystallization of Si3N4 on h-AlN and superhardness effect of AlN/Si3N4 nanomultilayers. Acta Physica Sinica, 2009, 58(4): 2654-2659.doi:10.7498/aps.58.2654 |
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.The surface mapping and crystal orientation of body-centered cubic thin metal tungsten films of different thickness. Acta Physica Sinica, 2007, 56(12): 7248-7254.doi:10.7498/aps.56.7248 |
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Song Hong-Zhou, Zhang Ping, Zhao Xian-Geng.First-principles calculation of Be(0001) thin films: quantum size effect and adsorption of atomic hydrogen. Acta Physica Sinica, 2007, 56(1): 465-473.doi:10.7498/aps.56.465 |
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Zhao Wen-Ji, Dong Yun-Shan, Yue Jian-Ling, Li Ge-Yang.Crystallization of Si3N4 and superhardness effect of ZrN/Si3N4 nano-multilayers. Acta Physica Sinica, 2007, 56(1): 459-464.doi:10.7498/aps.56.459 |
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San Hai-Sheng, Chen Chong, He Yu-Yang, Wang Jun, Feng Bo-Xue.Study on electrical properties of n-type transparent and conductiveCdIn22O44 thin film and the optimum preparation parameters for large- area film. Acta Physica Sinica, 2005, 54(4): 1736-1741.doi:10.7498/aps.54.1736 |
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Xie Yan-Bo, Wang Bing-Hong, Quan Hong-Jun, Yang Wei-Song, Wang Wei-Ning.Finite size effect in EZ model. Acta Physica Sinica, 2003, 52(10): 2399-2403.doi:10.7498/aps.52.2399 |
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CHEN JUN-FANG, WU XIAN-QIU, WANG DE-QIU, DING ZHEN-FENG, REN ZHAO-XING.INVESTIGATION ON THE DEPOSITION PROCESS OF SILICON NITRIDE THIN FILM PREPARED BY ECR-PECVD. Acta Physica Sinica, 1999, 48(7): 1309-1314.doi:10.7498/aps.48.1309 |
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YI XIN-JIAN, LI YI, HAO JIAN-HUA, ZHANG XIN-YU, G.K.WONG.THIN FILMS OF Sb GROWN BY MOLECULAR BEAM EPITAXY AND THE QUANTUM SIZE EFFECT. Acta Physica Sinica, 1998, 47(11): 1896-1899.doi:10.7498/aps.47.1896 |
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WU DA-WEI, HE MENG-BING, GUO HUAI-XI, LUO HAI-LIN, ZHANG ZHI-HONG, FU DE-JUN, FAN XIANG-JUN.STRUCTURE AND CHARACTERISTICS OF C3N4 THIN FILMS. Acta Physica Sinica, 1997, 46(3): 530-535.doi:10.7498/aps.46.530 |
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LIU WEI-GUO, KONG LING-BING, ZHANG LIANG-YING, YAO XI.PHASE TRANSITION IN POLYCRYSTALLINE FERROELECTRIC THIN FILMS——STRESS AND SIZE EFFECTS. Acta Physica Sinica, 1996, 45(2): 318-323.doi:10.7498/aps.45.318 |
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XING XU, JIANG WEI, WANG XI-FU.INVESTIGATION OF THE ANOMALOUS HALL EFFECT IN n-Ge AT ROOM TEMPERATURE BY THE INVERSION LAYERS MODEL. Acta Physica Sinica, 1989, 38(7): 1210-1214.doi:10.7498/aps.38.1210 |
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ZOU NAN-ZHI, GONG CHANG-DE.INFLUENCE OF SIZE EFFECT ON CRITICAL BEHAVIORS AT FILM SURFACE. Acta Physica Sinica, 1989, 38(5): 807-811.doi:10.7498/aps.38.807 |
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WANG KE-LIN, WU ZI-YU, WANG MAO-HUA.THE SOLITON SOLUTION AND SIZE EFFECT IN K-S MODEL. Acta Physica Sinica, 1986, 35(6): 824-828.doi:10.7498/aps.35.824 |
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LI SZE-YUAN, LI SHOU-SONG, WANG YU-ZHEN, ZHANG TONG-JUN.THE ELECTRICAL EFFECTS OF GOLD AT THE SILICON NITRIDE-SILICON INTERFACE. Acta Physica Sinica, 1984, 33(5): 662-670.doi:10.7498/aps.33.662 |
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