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Deng Wen-Juan, Zhu Bin, Wang Zhuang-Fei, Peng Xin-Cun, Zou Ji-Jun.Resolution characteristics of varying doping and varying composition AlxGa1–xAs/GaAs reflective photocathodes. Acta Physica Sinica, 2022, 71(15): 157901.doi:10.7498/aps.71.20220244 |
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi.Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica, 2013, 62(20): 207303.doi:10.7498/aps.62.207303 |
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Ye Xian, Huang Hui, Ren Xiao-Min, Guo Jing-Wei, Huang Yong-Qing, Wang Qi, Zhang Xia.Growths of InAs/GaAs and InAs/In x Ga1-x As/GaAs nanowire heterostructures. Acta Physica Sinica, 2011, 60(3): 036103.doi:10.7498/aps.60.036103 |
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Liang Ying-Xin, Li Wei-Feng, Wei Jian-Hua, Jin Yong.Bipolaron mechanism of DX center in AlxGa1-xAs:Si. Acta Physica Sinica, 2010, 59(12): 8850-8855.doi:10.7498/aps.59.8850 |
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Lei Shuang-Ying, Shen Bo, Zhang Guo-Yi.Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions. Acta Physica Sinica, 2008, 57(4): 2386-2391.doi:10.7498/aps.57.2386 |
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Wang Chuan-Dao.Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots. Acta Physica Sinica, 2008, 57(2): 1091-1096.doi:10.7498/aps.57.1091 |
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MIU ZHONG-LIN, CHEN PING-PING, LU WEI, XU WEN-LAN, LI ZHI-FENG, CAI WEI-YING.. Acta Physica Sinica, 2001, 50(1): 111-115.doi:10.7498/aps.50.111 |
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Li Na, Yuan Xian-Zhang, Li Ning, Lu Wei, Li Zhi-Feng, Dou Hong-Fei, Shen Xue-Chu, Jin Li, Li Hong-Wei, Zhou Jun-Ming, Huang Yi.. Acta Physica Sinica, 2000, 49(4): 797-801.doi:10.7498/aps.49.797 |
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CHEN YI-DONG, LIU XING-QUAN, LU WEI, SHI GUO-LIANG, SHEN XUE-CHU, Q.X.ZHAO, M.WILLANDER.STUDY OF THE INTER-BAND TRANSITION OF THE GaAs SINGLE-CRYSTAL FILM ON SrTiO3 SUBSTRATE BY MBE. Acta Physica Sinica, 1999, 48(9): 1718-1722.doi:10.7498/aps.48.1718 |
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CHENG WEN-QIN, CAI LI-HONG, XIE XIAO-GANG, WANG WEN-XIN, HU QIANG, ZHOU JUN-MING.PHOTOLUMINESCENCE SPECTRA OF AlyGa1-yAs/AlxGa1-xAs QUANTUM WELL FOR LASERS. Acta Physica Sinica, 1996, 45(2): 304-306.doi:10.7498/aps.45.304 |
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CHEN WEI-DE, GUI YU-DE.DETERMINATION OF AlxGa1-xAs AUGER SENSITIVITY FACTORS. Acta Physica Sinica, 1994, 43(4): 673-677.doi:10.7498/aps.43.673 |
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WEI YA-YI, SHEN JIN-XI, ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN, PENG ZHENG-FU, ZHANG YUN-QIANG.STUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION. Acta Physica Sinica, 1994, 43(2): 282-288.doi:10.7498/aps.43.282 |
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PAN SHAO-HUA, FENG SI-MIN, CUI DA-FU, YANG GUO-ZHEN.TUNNEL BROADENING EFFECT ON INTERSUBBAND OPTICAL SATURATION IN SUPERLATTICES. Acta Physica Sinica, 1993, 42(7): 1074-1079.doi:10.7498/aps.42.1074-2 |
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FAN WEI-JUN, XIA JIAN-BAI.SUBBAND STRUCTURE OF GaAs/AlGaAs SUPERLAT-TICES UNDER CROSSED ELECTRIC AND MAGNETIC FIELDS. Acta Physica Sinica, 1990, 39(9): 1465-1472.doi:10.7498/aps.39.1465 |
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WANG LI-JUN, HOU HONG-QI, ZHOU JUN-MING, TANG RU-MING, LU ZHI-DONG, WANG YAN-YUN, HUANG YI.PHOTOLUMINESCENCE STUDIES ON InxGa1-xAs-GaAs STRAINED QUANTUM WELLS STRUCTURE UNDER HYDROSTATIC PRESSURE. Acta Physica Sinica, 1989, 38(7): 1086-1092.doi:10.7498/aps.38.1086 |
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