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Kang Jia-Xing, Yan Quan-He, Cao Hao-Yu, Meng Wei-Wei, Xu Fei, Hong Feng.Photovoltaic properties of novel quaternary chalcogenides based on high-throughput screening and first-principles calculations. Acta Physica Sinica, 2024, 73(17): 176301.doi:10.7498/aps.73.20240795 |
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Tang Yan-Hao.Exotic states in moiré superlattices of twisted semiconducting transition metal dichalcogenides. Acta Physica Sinica, 2023, 72(2): 027802.doi:10.7498/aps.72.20222080 |
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Shu Yan-Tao, Zhang You-Wei, Wang Shun.Photodetectors based on homojunctions of transition metal dichalcogenides. Acta Physica Sinica, 2021, 70(17): 177301.doi:10.7498/aps.70.20210859 |
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Shi Heng-Xian, Yang Kai-Ke, Luo Jun-Wei.Origin of abnormal thermal conductivity in group III-V boron compound semiconductors. Acta Physica Sinica, 2021, 70(14): 147302.doi:10.7498/aps.70.20210797 |
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Liu Hui-Ying, Wang Shu-Shen, Lin Heng-Fu.Group III monochalcogenide of single-layered haeckelites structureMX(M= Al, Ga, In;X= S, Se, Te). Acta Physica Sinica, 2020, 69(14): 146802.doi:10.7498/aps.69.20191955 |
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Ma Song-Song, Shu Tian-Yu, Zhu Jia-Qi, Li Kai, Wu Hui-Zhen.Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas. Acta Physica Sinica, 2019, 68(16): 166801.doi:10.7498/aps.68.20191074 |
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Zhou Yu-Zhi.Model and applications of transition metal dichalcogenides based compliant substrate epitaxy system. Acta Physica Sinica, 2018, 67(21): 218102.doi:10.7498/aps.67.20181571 |
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Qian Yu-Min, Xu Gang.Electronic structures cobalt group pnictides: BaT2P2 and BaT2As2 (T=Co, Rh, Ir). Acta Physica Sinica, 2011, 60(6): 067101.doi:10.7498/aps.60.067101 |
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Liu Su, Li Bin, Wang Wei, Wang Jun, Liu Mei.Electronic structure and magnetism of SrFeAsF and Co-doped superconductor SrFe0.875Co0.125AsF. Acta Physica Sinica, 2010, 59(6): 4245-4252.doi:10.7498/aps.59.4245 |
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Chen Xiang-Lei, Zhang Jie, Du Huai-Jiang, Zhou Xian-Yi, Ye Bang-Jiao.Calculation of positron lifetime of compound semiconductors. Acta Physica Sinica, 2010, 59(1): 603-608.doi:10.7498/aps.59.603 |
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