[1] |
Zhao Ming-Hai, Sun Jing-Jing, Wang Dan, Zou Zhi-Qiang, Liang Qi.STM studies of the epitaxial growth of C60 molecules on Si(111)-7×7 surface. Acta Physica Sinica, 2010, 59(1): 636-642.doi:10.7498/aps.59.636 |
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Zhang Chong, Ye Hui, Zhang Lei, Huang-Fu You-Rui, Liu Xu.A study of RHEED pattern from the epitaxial growth of Si-Ge crystal. Acta Physica Sinica, 2009, 58(11): 7765-7772.doi:10.7498/aps.58.7765 |
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Zhang Li-Xin, Wang En-Ge.Surface reconstructions and the local magnetic moments in Mn/GaAs(001) system. Acta Physica Sinica, 2006, 55(1): 142-147.doi:10.7498/aps.55.142 |
[4] |
Yan Long, Zhang Yong-Ping, Peng Yi-Ping, Pang Shi-Jin, Gao Hong-Jun.. Acta Physica Sinica, 2002, 51(5): 1017-1021.doi:10.7498/aps.51.1017 |
[5] |
Zhang Yong-Peng, Yan Long, Xie Si-Shen, Pang Shi-Jin, Gao Hong-Jun.. Acta Physica Sinica, 2002, 51(2): 296-299.doi:10.7498/aps.51.296 |
[6] |
WANG PEI-LU, LIU ZHONG-YANG, ZHENG SI-XIAO, LIAO XIAO-DONG, YANG CHAO-WEN, TANG A-YOU, SHI MIAN-GONG, YANG BEI-FANG, MIAO JING-WEI.STUDIES ON THE FEATURE OF Si(111) SURFACE IMPLANTED BY NITROGEN ATOM,MOLECULE AND CLUSTER IONS. Acta Physica Sinica, 2001, 50(5): 860-864.doi:10.7498/aps.50.860 |
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YAN LONG, ZHANG YONG-PING, PENG YI-PING, PANG SHI-JIN, GAO HONG-JUN.THE PREFERENTIAL ADSORPTION OF Ge ON Si(111)7×7 SURFACE. Acta Physica Sinica, 2001, 50(11): 2132-2136.doi:10.7498/aps.50.2132 |
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FAN CHAO-YANG, ZHANG XUN-SHENG, TANG JING-CHANG, SUI HUA, XU YA-BO, XU SHI-HONG, PAN HAI-BIN, XU PENG-SHOU.INVESTIGATION OF Na/Si(111)3×1 SURFACE STRUCTURE USING NEXAFS. Acta Physica Sinica, 1997, 46(5): 953-958.doi:10.7498/aps.46.953 |
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LI MING, XU MING, LIU HUI-ZHOU.KINETICS OF ORDERING AND 2-DIMENSIONAL GROWTH OF Ag ON Si(111). Acta Physica Sinica, 1996, 45(8): 1380-1389.doi:10.7498/aps.45.1380 |
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GAI ZHENG, HE YI, YANG WEI-SHENG.CONCERTED MOTION OF Ge ADATOMS ON THE MODERATE TEMPERATURE PHASE OF THE Ge(111) SURFACE. Acta Physica Sinica, 1996, 45(8): 1350-1358.doi:10.7498/aps.45.1350 |
[11] |
Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica, 1991, 40(7): 1121-1128.doi:10.7498/aps.40.1121 |
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CHEN KE-MING, JIN GAO-LONG, SHENG CHI, YU MING-REN.THE GROWTH DYNAMICS OF Si(111) MBE STUDIED BY RHEED INTENSITY OSCILLATIONS. Acta Physica Sinica, 1990, 39(12): 1945-1951.doi:10.7498/aps.39.1945 |
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MEI LIANG-MO, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING.THEORETICAL STUDY OF THE ELECTRONIC STRUCTURES OF Si(111) SURFACE. Acta Physica Sinica, 1989, 38(10): 1578-1584.doi:10.7498/aps.38.1578 |
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LIN ZI-JING, WANG KE-LIN.INVESTIGATION OF SURFACE PHONONS AT IDEAL, RELAXED AND 2×1 RECONSTRUCTED Si(lll) SURFACE. Acta Physica Sinica, 1989, 38(6): 891-899.doi:10.7498/aps.38.891 |
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WANG XIANG-DONG, HU JI-HUANG, DAI DAO-XUAN.TOTAL CURRENT SPECTROSCOPY STUDY ON CLEAN Si(111)7×7 SURFACE. Acta Physica Sinica, 1988, 37(11): 1888-1892.doi:10.7498/aps.37.1888 |
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YE LING, ZHANG KAI-MING.A TOTAL ENERGY LDF-DVM STUDY ON THE CHEMISORPTION OF IODINE ON Si AND Ge(111) SURFACES. Acta Physica Sinica, 1987, 36(1): 47-53.doi:10.7498/aps.36.47 |
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XIA JIAN-BAI.RELAXATION EFFECTS OF THE (111) SURFACE OF Si AND GaAs. Acta Physica Sinica, 1984, 33(2): 143-153.doi:10.7498/aps.33.143 |
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XU YONG-NIAN, ZHANG KAI-MING.THE GROUP Ⅶ ELEMENTS CHEMISORPTION ON Si(111) AND Ge (111) SURFACES. Acta Physica Sinica, 1984, 33(11): 1619-1623.doi:10.7498/aps.33.1619 |
[19] |
ZHANG KAI-MING, YE LING.A PRELIMINARY STUDY ON THE RELAXATION OF Si(111) SURFACE ATOMS. Acta Physica Sinica, 1980, 29(1): 122-126.doi:10.7498/aps.29.122 |
[20] |
ZHANG KAI-MING, YE LING.CHLORINE CHEMISORPTION ON THE SILICON AND GERMANIUM SURFACE. Acta Physica Sinica, 1980, 29(12): 1596-1603.doi:10.7498/aps.29.1596 |