[1] |
Zhou Kai, Li Hui, Wang Zhu.Defects in proton-irradiated Zn-doped GaSb studied by positron annihilation and photoluminescence. Acta Physica Sinica, 2010, 59(7): 5116-5121.doi:10.7498/aps.59.5116 |
[2] |
CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING.PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica, 1994, 43(11): 1847-1853.doi:10.7498/aps.43.1847 |
[3] |
PENG DONG-LIANG, WANG TIAN-MIN, TONG ZHI-SHEN.INVESTIGATION ON THE DEFECTS IN THE POST-DEFORM- ATION HYDROGEN-CHARGED POLYCRYSTALLINE PURE Co BY POSITRON ANNIHILATION. Acta Physica Sinica, 1992, 41(7): 1106-1110.doi:10.7498/aps.41.1106 |
[4] |
WANG HONG, ZHU MEI-FANG, ZHENG DE-JUAN.CALCULATION OF ELECTRONIC POTENTIAL DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1992, 41(8): 1338-1344.doi:10.7498/aps.41.1338 |
[5] |
SHI ZHI-KANG, HUANG CUN-PING.A STUDY ON THE 2% PdO/Al2O3 BY MEANS OF FREE POSITRON ANNIHILATION TECHNIQUE IN THE SOLID SURFACE LAYER. Acta Physica Sinica, 1992, 41(2): 288-294.doi:10.7498/aps.41.288 |
[6] |
ZHONG ZHAN-TIAN, WANG DA-WEN, LIAO XIAN-BO, FAN YUE, LI CHENG-FANG, MOU SHAN-MING.XPS AND AES STUDY FOR Au/a-Si:H INTERFACE. Acta Physica Sinica, 1991, 40(2): 275-280.doi:10.7498/aps.40.275 |
[7] |
WU YI-CHU, TIAN ZHONG-ZHUO, CHANG XIANG-RONG, XIAO JI-MEI.POSITRON ANNIHILATION STUDY ON THE INTERACTION BETWEEN HYDROGEN ATOMS AND DEFECTS IN COLD-ROLLED NICKEL. Acta Physica Sinica, 1991, 40(11): 1883-1887.doi:10.7498/aps.40.1883 |
[8] |
ZHU MEI-FANG, ZONG JUN, ZHANG XIU-ZEN.THE EFFECTS OF NITROGEN CONTENT OF a-SiNx:H ON THE INTERFACE PROPERTIES IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1991, 40(2): 253-261.doi:10.7498/aps.40.253 |
[9] |
HUANG XU-GUANG, WANG HE-ZHOU, SHE WE-LONG, LI QING-XING, YU ZHEN-XIN, JIN BO, PENG SHAO-QI.PICOSECOND PHOTOLUMINESCENCE IN a-Si:H/a-SiNx:H MULTILAYERS. Acta Physica Sinica, 1991, 40(10): 1677-1682.doi:10.7498/aps.40.1677 |
[10] |
WANG SHAO-JIE, Y. C. JEAN.TEMPERATURE DEPENDENCE OF CONDENSED METHANE STUDIED BY POSITRON LIFETIME MEASUREMENTS. Acta Physica Sinica, 1990, 39(7): 106-111.doi:10.7498/aps.39.106 |
[11] |
WANG ZHI-CHAO, LIU XIANG-NA, FENG XIAO-MIE, GENG XI-SHENG.OPTICAL PROPERTIES OF THE a-Si:H/a-SiNx:H SUPERLATTICE FILMS. Acta Physica Sinica, 1988, 37(2): 189-196.doi:10.7498/aps.37.189 |
[12] |
WANG SHU-LIN, CHENG RU-GUANG.DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1988, 37(7): 1119-1123.doi:10.7498/aps.37.1119 |
[13] |
WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE.THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica, 1988, 37(8): 1291-1297.doi:10.7498/aps.37.1291 |
[14] |
CHEN GUANG-HUA, PENG YING-QUAN, CHEN JI-HONG.STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H. Acta Physica Sinica, 1987, 36(4): 524-528.doi:10.7498/aps.36.524 |
[15] |
WANG YUN-YU, PAN XIAO-LIANG, LEI ZHEN-XI, YANG JU-HUA.STUDY OF FAST IONIC CONDUCTOR BY POSITRON ANNIHILATION. Acta Physica Sinica, 1987, 36(4): 514-517.doi:10.7498/aps.36.514 |
[16] |
WANG WAN-LU, LIAO KE-JUN.STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica, 1987, 36(12): 1529-1537.doi:10.7498/aps.36.1529 |
[17] |
HE YONG-SHU, HUANG MAO-RONG, WAN XIN-ZHU, MA RU-ZHANG, YU EN-HUA.POSITRON ANNIHILATION STUDY OF DEFECTS IN MARTENSITIC TRANSFORMATION OF Fe-Ni ALLOYS. Acta Physica Sinica, 1986, 35(11): 1528-1531.doi:10.7498/aps.35.1528 |
[18] |
WANG TIAN-MIN, MICHIO SHIMOTOMAI, MASAO DOYAMA.STUDY OF THE LATTICE DEFECTS IN NiAl BY POSITRON ANNIHILATION. Acta Physica Sinica, 1986, 35(6): 704-708.doi:10.7498/aps.35.704 |
[19] |
WANG SHU-YING, JI GUO-KUN, HOU YAO-YONG, LI LI.POSITRON ANNIHILATION STUDY OF CRYSTAL DEFECTS DEVELOPED DURING FATIGUE PROCESS OF PURE POLYCRYSTALLINE Ni. Acta Physica Sinica, 1985, 34(12): 1627-1633.doi:10.7498/aps.34.1627 |
[20] |
CAO CHUAN, WANG YUN-YU, XIONG XING-MIN, XIONG LIANG-YUE, JIANG JIAN.INVESTIGATION OF THE RECOVERY OF DEFORMED IRON BY POSITRON ANNIHILATION. Acta Physica Sinica, 1982, 31(1): 126-131.doi:10.7498/aps.31.126 |