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Chen Xiao-Hui, Tan Bo-Zhong, Xue Tao, Ma Yun-Can, Jin Sai, Li Zhi-Jun, Xin Yue-Feng, Li Xiao-Ya, Li Jun.In situobservation of phase transition in polycrystalline under high-pressure high-strain-rate shock compression by X-ray diffraction. Acta Physica Sinica, 2020, 69(24): 246201.doi:10.7498/aps.69.20200929 |
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Sun Yun, Wang Sheng-Lai, Gu Qing-Tian, Xu Xin-Guang, Ding Jian-Xu, Liu Wen-Jie, Liu Guang-Xia, Zhu Sheng-Jun.Study of KDP crystal lattice strain and stress by high resolution X-ray diffraction. Acta Physica Sinica, 2012, 61(21): 210203.doi:10.7498/aps.61.210203 |
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YU MIN-FENG, YANG YU, SHEN WEN-ZHONG, ZHU HAI-JUN, GONG DA-WEI, SHENG CHI, WANG XUN.INTERSUBBAND ABSORPTION IN p-TYPE GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS. Acta Physica Sinica, 1997, 46(4): 740-746.doi:10.7498/aps.46.740 |
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XU ZHI-ZHONG.THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATES. Acta Physica Sinica, 1996, 45(1): 126-132.doi:10.7498/aps.45.126 |
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WANG YU-TIAN, ZHUANG YAN, JIANG DE-SHENG, YANG XIAO-PING, JIANG XIAO-MING, WU JIA-YANG, XIU LI-SONG, ZHENG WEN-LI.STUDY OF DOUBLE-BARRIER SUPERLATTICE BY SYNCHROTRON RADIATION AND DOUBLE-CRYSTAL X-RAY DIFFRACTION. Acta Physica Sinica, 1996, 45(10): 1709-1716.doi:10.7498/aps.45.1709 |
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GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING.Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica, 1996, 45(4): 647-654.doi:10.7498/aps.45.647 |
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Zhang Yan, Wang Yu-Tian, Pan Shi-Hong.. Acta Physica Sinica, 1995, 44(7): 1073-1080.doi:10.7498/aps.44.1073 |
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Xu Zhi-Zhong.. Acta Physica Sinica, 1995, 44(7): 1141-1147.doi:10.7498/aps.44.1141 |
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XU ZHI-ZHONG.THE BOND LENGTHS AND THEIR EFFECTS ON THE ELECTRONIC ENERGY BAND STRUCTURES IN THE GexSi1-x ALLOYS. Acta Physica Sinica, 1994, 43(7): 1111-1117.doi:10.7498/aps.43.1111 |
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HE XIAN-CHANG, WU ZI-QIN, ZHAO TE-XIU, Lü ZHI-HUI, WANG XIAO-PING, SUN GUO-XI.INVESTIGATION OF LATTICE DEFORMATION OF POROUS SILICON FILMS BY X-RAY DOUBLE CRYSTAL DIFFRACTION. Acta Physica Sinica, 1993, 42(6): 954-962.doi:10.7498/aps.42.954 |
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XU ZHI-ZHONG.OPTICAL PROPERTIES OF COHERENTLY STRAINED ALLOYS GexSi1-x ON Si (001) SUBSTRATES. Acta Physica Sinica, 1993, 42(5): 824-831.doi:10.7498/aps.42.824 |
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LI JIAN-HUA, MAI ZHEN-HONG, CUI SHU-FAN.X-RAY DOUBLE-CRYSTAL DIFFRACTION AND TOPOGRAPHY STUDY OF STRAIN RELAXED InGaAs/GaAs SUPERLATTICES. Acta Physica Sinica, 1993, 42(9): 1485-1490.doi:10.7498/aps.42.1485 |
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ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica, 1993, 42(7): 1121-1128.doi:10.7498/aps.42.1121-2 |
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Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica, 1991, 40(7): 1121-1128.doi:10.7498/aps.40.1121 |
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MAI ZHEN-HONG, GUI SHU-FAN, WANG CHAO-YING, WU LAN-SHENG.STUDY OF AlGaAs/GaAs WAVEGUIDE STRUCTURE BY X-RAY DOUBLE CRYSTAL DIFFRACTION. Acta Physica Sinica, 1991, 40(6): 969-977.doi:10.7498/aps.40.969 |
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ZHU NAN-CHANG, LI RUN-SHEN, XU SHUN-SHENG.INVESTIGATION OF THE SEMICONDUCTOR STRAINED SUPERLATTICE STRUCTURE AND INTERFACE BY X-RAY ROCKING-CURVE ANALYSIS. Acta Physica Sinica, 1991, 40(3): 433-440.doi:10.7498/aps.40.433 |
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WEI XING, JIANG WEI-DONG, ZHOU GUO-LIANG, YU MING-REN, WANC XUN.AUGER DEPTH PROFILE ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica, 1991, 40(9): 1514-1519.doi:10.7498/aps.40.1514 |
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ZHOU GUO-LIANG, SHEN XIAO-LIANG, SHENG CHI, JIANG WEI-DONG, YU MING-REN.SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica, 1991, 40(1): 56-63.doi:10.7498/aps.40.56 |
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ZHU NAN-CHANG, LI RUN-SHEN, CHEN JING-YI, XU SHUN-SHENG.INVESTIGATION OF THE SURFACE DISTORTED CRYSTALS BY DYNAMICAL X-RAY DOUBLE-CRYSTAL DIFFRACTION. Acta Physica Sinica, 1990, 39(5): 770-777.doi:10.7498/aps.39.770 |
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MA DE-LU, SHANG DE-YING, YU JIN-HUA.XRD STUDY OF N2+ IMPLANTED Si. Acta Physica Sinica, 1989, 38(4): 579-585.doi:10.7498/aps.38.579 |
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