In this paper infra-red absorption spectra and surface photovoltaic spectra of An-doped and undoped silicon are studied. The relation of minority carrier diffusion length to the height of base line of infra-red absorption spectra under the same surface condition is determined. By using semiconductor statistics, we obtain the Au-doped silicon semicondutor statistics formulae when the degeneracy factor is different from unit, as well as silicon two-levels recombination theory formulae when gAu,a≠1 and gAn,d≠ 1 The ratios of the ca-culated lifetime of minority carrier to the experimental data are between 1.64 and 0.745.
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