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Jiao Fei, Jiang Jun, Xie Lu-You, Zhang Deng-Hong, Dong Chen-Zhong, Chen Zhan-Bin.Theoretical study on electron-impact excitation cross section and polarization for 5s2S1/2 → 5p2P3/2 of Cd. Acta Physica Sinica, 2015, 64(23): 233401.doi:10.7498/aps.64.233401 |
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Jia Yu, Yang Shi-E, Ma Bing-Xian, Li Xin-Jian, Hu Xing.Electronic structure of the stable GaAs(2 5 1 1) surface. Acta Physica Sinica, 2004, 53(10): 3515-3520.doi:10.7498/aps.53.3515 |
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Zhang Fa－pei, Guo Hong－zhi, Xu Peng－shou, Zhu Chuan－gang, Lu Er－dong, Zhang Xin－yi, Liang Ren－you.Interface Formation Between Co With S－Passivated GaAs(100) . Acta Physica Sinica, 2000, 49(1): 142-145.doi:10.7498/aps.49.142 |
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WU DI, LIU GUO-LEI, WU YI-ZHENG, DONG GUO-SHENG, JIN XIAO-FENG, SHEN XIAO-LIANG.EPITAXIAL STRUCTURES AND MAGNETIC PROPERTIES OF Co100-xMnx ALLOYS ON GaAs(001) SURFACE. Acta Physica Sinica, 1999, 48(12): 2320-2326.doi:10.7498/aps.48.2320 |
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HU HAI-TIAN, LAI BING, YUAN ZE-LIANG, DING XUN-MIN, HOU XIAO-YUAN.NITRIDATION OF K/GaAs(100) SURFACES. Acta Physica Sinica, 1998, 47(6): 1041-1046.doi:10.7498/aps.47.1041 |
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YUAN ZE-LIANG, DING XUN-MIN, HU HAI-TIAN, LI ZHE-SHEN, YANG JIAN-SHU, MIAO XI-YUE, CHEN XI-YING, CAO XIAN-AN, HOU XIAO-YUAN, LU ER-DONG, XU SHI-HONG, XU PENG-SHOU, ZHANG XIN-YI.INVESTIGATION OF NEUTRALIZED (NH4)2S SOLUTION-PASSIVATED GaAs(100) SURFACES. Acta Physica Sinica, 1998, 47(1): 68-74.doi:10.7498/aps.47.68 |
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BAN DA-YAN, FANG RONG-CHUAN, YANG FENG-YUAN, XU SHI-HONG, XU PENG-SHOU, YUAN SHI-XIN.VALENCE BAND OFFSETS OF Ge/ZnSe(100) STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION. Acta Physica Sinica, 1997, 46(3): 587-595.doi:10.7498/aps.46.587 |
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XU SHI-HONG, LU ER-DONG, YU XIAO-JIANG, PAN HAI-BIN, ZHANG FA-PEI, XU PENG-SHOU.SRPES STUDY OF THE Sm/Si(100) INTERFACE FORMATION AND ELECTRONIC STRUCTURES. Acta Physica Sinica, 1996, 45(11): 1898-1904.doi:10.7498/aps.45.1898 |
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LU ER-DONG, XU PENG-SHOU, YU XIAO-JIANG, XU SHI-HONG, PAN HAI-BIN, ZHANG XIN-YI.A NEW METHOD:CH3CSNH2/NH4OH PASSIVATED GaAs (100) SURFACE BY SRPES INVESTIGATION. Acta Physica Sinica, 1996, 45(4): 715-720.doi:10.7498/aps.45.715 |
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Zhao Te-Xiu, Wang Xiao-Peng, Wu Jian-Xin, Xu Peng-Shou, Lu Er-Dong, Xu Zhen-Jia, Ji Hang.. Acta Physica Sinica, 1995, 44(4): 622-628.doi:10.7498/aps.44.622 |
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CHEN YAN, DONG GUO-SHENG, ZHANG MING, Jin Xiao-Feng, LU ER-DONG, PAN HAI-BING, XU PENG-SHOU, ZHANG XIN-YI, FAN CHAO-YANG.. Acta Physica Sinica, 1995, 44(1): 145-151.doi:10.7498/aps.44.145 |
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Chen Wei-De, Jin Gao-Long, Cui Yu-De, Duan Li-Hong, Gao Zhi-Qiang.. Acta Physica Sinica, 1995, 44(8): 1328-1334.doi:10.7498/aps.44.1328 |
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LU XUE-KUN, HAO PING-HAI, HE ZHONG-QING, HOU XIAO-YUAN, DING XUN-MIN.TEMPERATURE EFFECTS ON THE INTERACTION BETWEEN P AND GaAs(lOO) SURFACE. Acta Physica Sinica, 1992, 41(10): 1728-1736.doi:10.7498/aps.41.1728 |
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WANG XIANG-DONG, HU JI-HUANG, GE YU-QING, DAI DAO-XUAN.TOTAL CURRENT SPECTRA STUDIES ON ELECTRONIC STATES OF Si(100) SURFACE. Acta Physica Sinica, 1992, 41(6): 992-998.doi:10.7498/aps.41.992 |
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LU XUE-KUN, HOU XIAO-YUAN, DONG GUO-SHENG, DING XUN-MIN.PHOTOELECTRON SPECTROSCOPY STUDIES OF α-P/GaAs (100) INTERFACES. Acta Physica Sinica, 1992, 41(4): 689-696.doi:10.7498/aps.41.689 |
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XU ZHANG-LONG, LIU GU, JI ZHEN-GUO, ZHOU XIAO-XIA.A ARUPS INVESTIGATION OF TWO SURFACE SUPERSTRU-CTURES (4×1)-O AND (2×2)-S ON VANADIUM(001) SURFACES. Acta Physica Sinica, 1988, 37(2): 311-317.doi:10.7498/aps.37.311 |
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DING XUN-MIN, DONG GUO-SHENG, YANG SHU, CHEN PING, WANG XUN.AN ELECTRON SPECTROSCOPY STUDY OF THE In/GaAs (111) INTERFACE FORMATION PROCESS. Acta Physica Sinica, 1985, 34(5): 634-639.doi:10.7498/aps.34.634 |
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JIN XIAO-FENG, FENG YI-QING, ZHUANG CHENG-QUN, WANG XUN.THE THERMAL DESORPTION SPECTRA STUDY OF HYDROGEN CHEMISORPTION ON Si(100) CLEAN SURFACE. Acta Physica Sinica, 1984, 33(6): 747-754.doi:10.7498/aps.33.747 |
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XU YA-BUO, DONG GUO-SHENG, DING XUN-MIN, YANG SHU, WANG XUN.THE UPS STUDY OF GaAs(1OO) SURFACE (4×1) STRUCTURE. Acta Physica Sinica, 1983, 32(10): 1339-1343.doi:10.7498/aps.32.1339 |
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Yu Ming-ren, Yang Guang, Wang Xun.DETERMINATION OF THE ATOMIC CONCENTRATION RATIO ON InP (100) CLEAN SURFACES BY X-RAY PHOTOELECTRON SPECTROSCOPY. Acta Physica Sinica, 1983, 32(6): 799-802.doi:10.7498/aps.32.799 |
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