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Zhang Zhu-Feng, Ren Yin-Shuan.Preparation and magnetic properties of chromium doped zinc sulfide and cadmium sulfide nanostructures by solvothermal method. Acta Physica Sinica, 2021, 70(13): 137103.doi:10.7498/aps.70.20201963 |
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Zhu Wei-Jun, Chen Jin-Xin, Gao Yu-Han, Yang De-Ren, Ma Xiang-Yang.Electroluminescence from silicon-based light-emitting device with erbium-doped TiO2films: Enhancement effect of ytterbium codoping. Acta Physica Sinica, 2019, 68(12): 124204.doi:10.7498/aps.68.20190300 |
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Chen Dan-Dan, Xu Fei, Cao Ru-Nan, Jiang Zui-Min, Ma Zhong-Quan, Yang Jie, Du Hui-Wei, Hong Feng.Near infrared broadband from Er-Tm codoped zinc oxide and temperature-dependent properties. Acta Physica Sinica, 2015, 64(4): 047104.doi:10.7498/aps.64.047104 |
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Gao Song, Zhao Su-Ling, Xu Zheng, Yang Yi-Fan, Liu Zhi-Min, Xie Xiao-Yi.Near ultraviolet luminescence characteristics of ZnO nanoparticle film. Acta Physica Sinica, 2014, 63(15): 157702.doi:10.7498/aps.63.157702 |
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Yu Tian-Yan, Qin Yang, Liu Ding-Quan.Investigation of the crystal and optical properties of ZnS thin films deposited at different temperature. Acta Physica Sinica, 2013, 62(21): 214211.doi:10.7498/aps.62.214211 |
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Li Cheng-Ren, Ming Cheng-Guo, Li Shu-Feng, Ding Jian-Hua, Wang Bao-Cheng, Zhang Li.Up-conversion mechanisms of Yb-Er co-doped Al2O3 film and its temperature characteristics. Acta Physica Sinica, 2008, 57(10): 6604-6608.doi:10.7498/aps.57.6604 |
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Zhang Xiu-Long, Yang Sheng-Yi, Lou Zhi-Dong, Hou Yan-Bing.Dynamic electrical characteristics of organic light-emitting diodes. Acta Physica Sinica, 2007, 56(3): 1632-1636.doi:10.7498/aps.56.1632 |
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Xin Xian-Shuang, Zhou Bai-Bin, Lü Shu-Chen, Su Wen-Hui.Preparation and luminescence characteristics of Eu-doped nanocrystalline zinc o xide. Acta Physica Sinica, 2005, 54(4): 1859-1862.doi:10.7498/aps.54.1859 |
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Peng Xing-Ping, Lan Wei, Tan Yong-Sheng, Tong Li-Guo, Wang Yin-Yue.Photoluminescent properties of Cu-doped ZnO thin films. Acta Physica Sinica, 2004, 53(8): 2705-2709.doi:10.7498/aps.53.2705 |
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Chen Chang-Yong, Chen Wei-De, Wang Yong-Qian, Song Shu-Fang, Xu Zhen-Jia.Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films. Acta Physica Sinica, 2003, 52(3): 736-739.doi:10.7498/aps.52.736 |
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Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia.RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica, 2003, 52(10): 2558-2562.doi:10.7498/aps.52.2558 |
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XIAO ZHI-FEI, XU FEI, ZHANG TONG-HE, CHENG GUO-AN, GU LAN-LAN.. Acta Physica Sinica, 2001, 50(1): 164-168.doi:10.7498/aps.50.164 |
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ZHAO LI-JUAN, ZHONG GUO-ZHU, ZHANG GUANG-YIN.ELECTROLUMINESCENT MECHANISM IN SrS:HoF3 THIN FILM. Acta Physica Sinica, 1999, 48(7): 1381-1388.doi:10.7498/aps.48.1381 |
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LEI HONG-BING, YANG QIN-QING, WANG QI-MING.CRYSTAL-FIELD SPLITTING OF Er3+ IN SILICON. Acta Physica Sinica, 1998, 47(7): 1201-1206.doi:10.7498/aps.47.1201 |
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WAN JUN, SHENG CHI, LU FANG, GONG DA-WEI, FAN YONG-LIANG, LIN FENG, WANG XUN.PHOTOLUMINESCENCE OF Er IN SiOx. Acta Physica Sinica, 1998, 47(10): 1741-1746.doi:10.7498/aps.47.1741 |
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TONG SONG, LIU XIANG-NA, WANG LU-CHUN, YAN FENG, BAO XI-MAO.VISIBLE ELECTROLUMINESCENCE FROM SILICONNANOCRYSTALLITES PREPARED BY PLASMAENHANCED CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica, 1997, 46(6): 1217-1222.doi:10.7498/aps.46.1217 |
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YUAN RU-LIN, SHI ER-WEI, WANG BU-GUO, XIA CHANG-TAI, LI WEN-JUN, ZHONG WEI-ZHOU.STABILITY ENERGY OF GROWTH-UNIT AND MORPHOLOGY OF SPHALERITE CRYSTALLITES. Acta Physica Sinica, 1997, 46(10): 2071-2080.doi:10.7498/aps.46.2071 |
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HU KAI-SHENG, LI ZONG-XIANG, NING DING, LI HAO, ZHOU JIAN-PING, LIU QUAN-MIN.EFFECTS OF ELECTRON IRRADIATION ON LOSS CHARACTERISTICS OF SINGLE MODE OPTICAL FIBERS DOPED WITH RARE EARTH Er3+. Acta Physica Sinica, 1991, 40(4): 560-567.doi:10.7498/aps.40.560 |
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MENG LI-JIAN, LI CHANG-HUA, ZHONG GUO-ZHU.THE EFFECT OF Er3+ CONCENTRATION ON ALTERNATING CURRENT ELECTROLUMINESCENCE CHARACTERISTICS OF ZnS:ErF, THIN FILMS. Acta Physica Sinica, 1988, 37(10): 1619-1625.doi:10.7498/aps.37.1619 |
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