[1] |
Chen Jin-Feng, Zhu Lin-Fan.Electron collision cross section data in plasma etching modeling. Acta Physica Sinica, 2024, 73(9): 095201.doi:10.7498/aps.73.20231598 |
[2] |
Feng Jing-Hua, Meng Shi-Jian, Fu Yue-Cheng, Zhou Lin, Xu Rong-Kun, Zhang Jian-Hua, Li Lin-Bo, Zhang Fa-Qiang.Spatiotemporal distribution of hydrogenous electrode vacuum arc discharge plasma. Acta Physica Sinica, 2014, 63(14): 145205.doi:10.7498/aps.63.145205 |
[3] |
Yang Fa-Zhan, Shen Li-Ru, Wang Shi-Qing, Tang De-Li, Jin Fa-Ya, Liu Hai-Feng.UV Raman and XPS studies of hydrogenous diamond-like carbon films prepared by PECVD. Acta Physica Sinica, 2013, 62(1): 017802.doi:10.7498/aps.62.017802 |
[4] |
Wang Jian-Wei, Song Yi-Xu, Ren Tian-Ling, Li Jin-Chun, Chu Guo-Liang.Molecular dynamics simulation of Lag effect in fluorine plasma etching Si. Acta Physica Sinica, 2013, 62(24): 245202.doi:10.7498/aps.62.245202 |
[5] |
Wu Jun, Ma Zhi-Bin, Shen Wu-Lin, Yan Lei, Pan Xin, Wang Jian-Hua.Influence of nitrogen in diamond films on plasma etching. Acta Physica Sinica, 2013, 62(7): 075202.doi:10.7498/aps.62.075202 |
[6] |
Han Liang, Ning Tao, Liu De-Lian, He Liang.The study on the stress and the friction coefficient of tetrahedral amorphous carbon films bombarded by energetic Ar ion. Acta Physica Sinica, 2012, 61(17): 176801.doi:10.7498/aps.61.176801 |
[7] |
Wang Feng, Wu Wei-Dong, Jiang Xiao-Dong, Tang Yong-Jian.Surface crystallization of amorphous fused silica during electron cyclotron resonance plasma etching. Acta Physica Sinica, 2012, 61(2): 024206.doi:10.7498/aps.61.024206 |
[8] |
Han Liang, Chen Xian, Yang Li, Wang Yan-Wu, Wang Xiao-Yan, Zhao Yu-Qing.Surface modification and the friction coefficient of tetrahedral amorphous carbon films bombarded by energetic N ion. Acta Physica Sinica, 2011, 60(6): 066804.doi:10.7498/aps.60.066804 |
[9] |
Wu Zhi-Guo, Zhang Peng-Ju, Xu Liang, Li Shuan-Kui, Wang Jun, Li Xu-Dong, Yan Peng-Xun.Field emission properties of amorphous carbon nanodot arrays in a novel anodic aluminum oxide template by self-assembly technique. Acta Physica Sinica, 2010, 59(1): 438-442.doi:10.7498/aps.59.438 |
[10] |
Lü Ling, Gong Xin, Hao Yue.Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica, 2008, 57(2): 1128-1132.doi:10.7498/aps.57.1128 |
[11] |
Ma Xiao-Tao, Zheng Wan-Hua, Ren Gang, Fan Zhong-Chao, Chen Liang-Hui.Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal. Acta Physica Sinica, 2007, 56(2): 977-981.doi:10.7498/aps.56.977 |
[12] |
Wang Bi-Ben, Xu Xing-Zi, Zhang Bing.Growth of carbon nanotips by plasma-enhanced hot filament chemical vapor deposition. Acta Physica Sinica, 2006, 55(2): 941-946.doi:10.7498/aps.55.941 |
[13] |
Yang Wu-Bao, Fan Song-Hua, Ge Min, Zhang Gu-Ling, Shen Zeng-Min, Yang Si-Ze.Investigation of a new type nano carbon film prepared by high energy plasma assisted CVD. Acta Physica Sinica, 2006, 55(1): 351-356.doi:10.7498/aps.55.351 |
[14] |
Zhu Jia-Qi, Wang Jing-He, Meng Song-He, Han Jie-Cai, Zhang Lian-Sheng.The microstructure and properties of tetrahedral amorphous carbon films deposited by filtered arc with accelerating at different energetic grades. Acta Physica Sinica, 2004, 53(4): 1150-1156.doi:10.7498/aps.53.1150 |
[15] |
YE CHAO, NING ZHAO-YUAN, CHENG SHAN-HUA, KANG JIAN.STUDY ON α-C∶F FILMS DEPOSITED BY ELECTRON CYCLOTRONRESONANCE PLASMA CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica, 2001, 50(4): 784-789.doi:10.7498/aps.50.784 |
[16] |
YE CHAO, NING ZHAO-YUAN, CHENG SHAN-HUA.OPTICAL PROPERTIES OF AMORPHOUS FLUORINATED CARBON FILMS PREPARED BY ELECTRON CYCLOTRON RESONANCE PLASMA. Acta Physica Sinica, 2001, 50(10): 2017-2022.doi:10.7498/aps.50.2017 |
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CHENG SHAN-HUA, NING ZHAO-YUAN, KAN JIAN, MA CHUN-LAN, YE CHAO.EFFECTS OF DEPOSITION TEMPERATURE ON ELECTRICAL PROPERTIES OF HYDROGENATED AMORP HOUS CARBON FILMS. Acta Physica Sinica, 2000, 49(10): 2041-2046.doi:10.7498/aps.49.2041 |
[18] |
DU XIAO-LONG, CHEN GUANG-CHAO, JIANG DE-YI, YAO XIN-ZI, ZHU HE-SUN.PROPERTIES OF ELECTRON CYCLOTRON RESONANCE PLASMAS AND THEIR INFLUENCE ON THE DEPOSITION OF GaN FILMS. Acta Physica Sinica, 1999, 48(2): 257-266.doi:10.7498/aps.48.257 |
[19] |
CHAI CHANG-CHUN, YANG YIN-TANG, LI YUE-JIN, JIA HU-JUN, JI HUI-LIAN.STUDY ON PLASMA ETCHING OF β-SiC THIN FILMS IN SF6 AND THE SF6+O2 MIXTURES. Acta Physica Sinica, 1999, 48(3): 550-555.doi:10.7498/aps.48.550 |
[20] |
WANG FANG-PING, XU JIAN-GUO, SUN HENG-HUI.STUDY OF THE DEFECTS IN OXYGEN PLASMA IRRADIATED n/n+ Si. Acta Physica Sinica, 1987, 36(5): 646-650.doi:10.7498/aps.36.646 |