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Wang Yi-Lin, Lan Zi-Xuan, Du Hui-Wei, Zhao Lei, Ma Zhong-Quan.Phosphorus oxides in heavily doped polysilicon films. Acta Physica Sinica, 2022, 71(18): 188201.doi:10.7498/aps.71.20220706 |
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Zhang Hua-Lin, He Xin, Zhang Zhen-Hua.Magneto-electronic property in zigzag phosphorene nanoribbons doped with transition metal atom. Acta Physica Sinica, 2021, 70(5): 056101.doi:10.7498/aps.70.20201408 |
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Lv Huan-Ling, Wang Jing.The multi-scale theoretical models of Young's modulus of doped monocrystalline silicon nano-film. Acta Physica Sinica, 2015, 64(23): 236103.doi:10.7498/aps.64.236103 |
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Feng Qiu-Ju, Xu Rui-Zhuo, Guo Hui-Ying, Xu Kun, Li Rong, Tao Peng-Cheng, Liang Hong-Wei, Liu Jia-Yuan, Mei Yi-Ying.Influences of the substrate position on the morphology and characterization of phosphorus doped ZnO nanomaterial. Acta Physica Sinica, 2014, 63(16): 168101.doi:10.7498/aps.63.168101 |
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Wang Jing, Wang Ru-Zhi, Zhao Wei, Chen Jian, Wang Bo, Yan Hui.Field emission properties of silicon doped AlGaN thin film. Acta Physica Sinica, 2013, 62(1): 017702.doi:10.7498/aps.62.017702 |
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Cai Ya-Nan, Cui Can, Shen Hong-Lei, Liang Da-Yu, Li Pei-Gang, Tang Wei-Hua.Effects of thermal treatments on the formation of nanocrystalline Si embedded in Si-rich oxide films. Acta Physica Sinica, 2012, 61(15): 157804.doi:10.7498/aps.61.157804 |
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Zhang Ying, He Zhi-Bing, Li Ping, Yan Jian-Cheng.Thermal stability of Si-doped glow discharge polymer films. Acta Physica Sinica, 2011, 60(12): 126501.doi:10.7498/aps.60.126501 |
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Hu Xiao-Jun, Hu Heng, Chen Xiao-Hu, Xu Bei.The n-type conduction and microstructural properties of phosphorus ion implanted nanocrystalline diamond films. Acta Physica Sinica, 2011, 60(6): 068101.doi:10.7498/aps.60.068101 |
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Zhou Hong-Juan, Zhen Cong-Mian, Zhang Yong-Jin, Zhao Cui-Lian, Ma Li, Hou Deng-Lu.Preparation and magnetism of the N doped SiO2 thin film. Acta Physica Sinica, 2010, 59(5): 3499-3503.doi:10.7498/aps.59.3499 |
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