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Liang Qi, Yang Meng-Qi, Zhang Jing-Yang, Wang Ru-Zhi.PECVD-prepared high-quality GaN films and their photoresponse properties. Acta Physica Sinica, 2022, 71(9): 097302.doi:10.7498/aps.71.20211922 |
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Tang Dao-Sheng, Hua Yu-Chao, Zhou Yan-Guang, Cao Bing-Yang.Thermal conductivity modeling of GaN films. Acta Physica Sinica, 2021, 70(4): 045101.doi:10.7498/aps.70.20201611 |
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Jiang Feng-Yi, Liu Jun-Lin, Zhang Jian-Li, Xu Long-Quan, Ding Jie, Wang Guang-Xu, Quan Zhi-Jue, Wu Xiao-Ming, Zhao Peng, Liu Bi-Yu, Li Dan, Wang Xiao-Lan, Zheng Chang-Da, Pan Shuan, Fang Fang, Mo Chun-Lan.Semiconductor yellow light-emitting diodes. Acta Physica Sinica, 2019, 68(16): 168503.doi:10.7498/aps.68.20191044 |
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Wang Bao-Zhu, Zhang Xiu-Qing, Zhang Ao-Di, Zhou Xiao-Ran, Bahadir Kucukgok, Na Lu, Xiao Hong-Ling, Wang Xiao-Liang, Ian T. Ferguson.Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition. Acta Physica Sinica, 2015, 64(4): 047202.doi:10.7498/aps.64.047202 |
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Chen Cheng-Cheng, Liu Li-Ying, Wang Ru-Zhi, Song Xue-Mei, Wang Bo, Yan Hui.Preparation of nanostructured GaN films and their field emission enhancement for different substrates. Acta Physica Sinica, 2013, 62(17): 177701.doi:10.7498/aps.62.177701 |
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Li Tian-Wei, Liu Feng-Zhen, Zhu Mei-Fang.rf excited optical emission spectrum of radicals generated during hot wire chemical vapour deposition for the preparation of microcrystalline silicon thin film. Acta Physica Sinica, 2011, 60(1): 018103.doi:10.7498/aps.60.018103 |
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Li Bing, Liu Cai, Feng Liang-Huan, Zhang Jing-Quan, Zheng Jia-Gui, Cai Ya-Ping, Cai Wei, Wu Li-Li, Li Wei, Lei Zhi, Zeng Guang-Gen, Xia Geng-Pei.Deep level transient spectroscopy and photoluminescence studies of CdS/CdTe thin film solar cells. Acta Physica Sinica, 2009, 58(3): 1987-1991.doi:10.7498/aps.58.1987 |
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Han Xiao-Yan, Geng Xin-Hua, Hou Guo-Fu, Zhang Xiao-Dan, Li Gui-Jun, Yuan Yu-Jie, Wei Chang-Chun, Sun Jian, Zhang De-Kun, Zhao Ying.An optical emission spectroscopy study on the high rate growth of microcrystalline silicon films. Acta Physica Sinica, 2009, 58(2): 1344-1347.doi:10.7498/aps.58.1344 |
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Pan Xiao-Jun, Zhang Zhen-Xing, Wang Tao, Li Hui, Xie Er-Qing.Room temperature visible photoluminescence from nanocrystalline GaN∶Er film prepared by sputtering. Acta Physica Sinica, 2008, 57(6): 3786-3790.doi:10.7498/aps.57.3786 |
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Li Hong-Tao, Luo Yi, Xi Guang-Yi, Wang Lai, Jiang Yang, Zhao Wei, Han Yan-Jun, Hao Zhi-Biao, Sun Chang-Zheng.Thickness measurement of GaN films by X-ray diffraction. Acta Physica Sinica, 2008, 57(11): 7119-7125.doi:10.7498/aps.57.7119 |
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Yuan Jin-She, Chen Guang-De.Instantaneous relaxation of photoconductivity in GaN film grown on vicinal sapphire substrate by MBE. Acta Physica Sinica, 2007, 56(7): 4218-4223.doi:10.7498/aps.56.4218 |
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Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min.Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica, 2006, 55(10): 5487-5493.doi:10.7498/aps.55.5487 |
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Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben.A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica, 2006, 55(7): 3606-3610.doi:10.7498/aps.55.3606 |
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Xu Bo, Yu Qing-Xuan, Wu Qi-Hong, Liao Yuan, Wang Guan-Zhong, Fang Rong-Chuan.Effects of strain and Mg-dopant on the photoluminescencespectra in p-type GaN. Acta Physica Sinica, 2004, 53(1): 204-209.doi:10.7498/aps.53.204 |
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Zhang Jin-Cheng, Hao Yue, Li Pei-Xian, Fan Long, Feng Qian.Thickness measurement of GaN film based on transmission spectra. Acta Physica Sinica, 2004, 53(4): 1243-1246.doi:10.7498/aps.53.1243 |
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Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia.RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica, 2003, 52(10): 2558-2562.doi:10.7498/aps.52.2558 |
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Lai Tian-Shu, Fan Hai-Hua, Liu Zhen-Dong, Lin Wei-Zhu.Studies of broadband yellow luminescence of GaN. Acta Physica Sinica, 2003, 52(10): 2638-2641.doi:10.7498/aps.52.2638 |
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YUAN JIN-SHE, CHEN GUANG-DE, QI MING, LI AI-ZHEN, XU ZHUO.XPS AND AES INVESTIGATION OF GaN FILMS GROWN BY MBE. Acta Physica Sinica, 2001, 50(12): 2429-2433.doi:10.7498/aps.50.2429 |
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ZHANG HAO-XIANG, LU HUAN-MING, YE ZHI-ZHEN, ZHAO BING-HUI, WANG LEI, QUE DUAN-LIN.SECONDARY ION MASS SPECTROSCOPY AND PHOTOLUMINESCENCE INVESTIGATIONS ON THE GaN EPILAYER GROWN ON Si SUBSTRATE. Acta Physica Sinica, 1999, 48(7): 1315-1319.doi:10.7498/aps.48.1315 |
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WANG SHAO-QING, LIU QUAN-PU, YE HENG-QIANG.AN INCIPIENT EDGE DISLOCATION IN EPITAXIAL WURTZITE GaN. Acta Physica Sinica, 1998, 47(11): 1858-1861.doi:10.7498/aps.47.1858 |
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