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Zhang Leng, Zhang Peng-Zhan, Liu Fei, Li Fang-Zheng, Luo Yi, Hou Ji-Wei, Wu Kong-Ping.Carrier mobility in doped Sb2Se3based on deformation potential theory. Acta Physica Sinica, 2024, 73(4): 047101.doi:10.7498/aps.73.20231406 |
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Zhou Zhan-Hui, Li Qun, He Xiao-Min.Electron transport mechanism in AlN/β-Ga2O3heterostructures. Acta Physica Sinica, 2023, 72(2): 028501.doi:10.7498/aps.72.20221545 |
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi.Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica, 2013, 62(20): 207303.doi:10.7498/aps.62.207303 |
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Dong Hai-Ming.Investigation on mobility of single-layer MoS2 at low temperature. Acta Physica Sinica, 2013, 62(20): 206101.doi:10.7498/aps.62.206101 |
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Wang Xiao-Yan, Wang Guan-Yu.Hole scattering mechanism in tetragonal strained Si. Acta Physica Sinica, 2012, 61(5): 057304.doi:10.7498/aps.61.057304 |
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Zheng Xin, Jiang Tian, Cheng Xiang-Ai, Jiang Hou-Man, Lu Qi-Sheng.A new phenomenon of photoconductive InSb detector under the irradiation of out-band laser. Acta Physica Sinica, 2012, 61(4): 047302.doi:10.7498/aps.61.047302 |
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Yu Huang-Zhong.Measurement of the hole mobility in the blend system by space charge limited current. Acta Physica Sinica, 2012, 61(8): 087204.doi:10.7498/aps.61.087204 |
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Luo Yang, Duan Yu, Chen Ping, Zang Chun-Liang, Xie Yue, Zhao Yi, Liu Shi-Yong.Preliminary investigation on the method of determining electron mobility of tris (8-hydroxyquinolinato) aluminum by space charge limited current. Acta Physica Sinica, 2012, 61(14): 147801.doi:10.7498/aps.61.147801 |
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Chen Yi-Xin, Shen Guang-Di, Gao Zhi-Yuan, Guo Wei-Ling, Zhang Guang-Chen, Han Jun, Zhu Yan-Xu.Relationship between light efficiency and juction temperature of high power AlGaInP light-emitting diode. Acta Physica Sinica, 2011, 60(8): 087206.doi:10.7498/aps.60.087206 |
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Wang Ping-Ya, Zhang Jin-Feng, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue.Transport properties of two-dimensional electron gas in lattice-matched InAlN/GaN and InAlN/AlN/GaN materials. Acta Physica Sinica, 2011, 60(11): 117304.doi:10.7498/aps.60.117304 |
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Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue.High electron mobility lattice-matched InAlN/GaN materials. Acta Physica Sinica, 2011, 60(11): 117305.doi:10.7498/aps.60.117305 |
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Chen Yi-Xin, Shen Guang-Di, Han Jin-Ru, Li Jian-Jun, Guo Wei-Ling.Study of light efficiency and lifetime of LED with different surface structures. Acta Physica Sinica, 2010, 59(1): 545-549.doi:10.7498/aps.59.545 |
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Chen Yue-Ning, Xu Zheng, Zhao Su-Ling, Sun Qin-Jun, Yin Fei-Fei, Dong Yu-Hang.Research on least-squares fitting calculation of the field-effect mobility. Acta Physica Sinica, 2010, 59(11): 8113-8117.doi:10.7498/aps.59.8113 |
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Xu Miao, Peng Jun-Biao.Effect of casting process of polymer active layer on performances of polymer solar cells. Acta Physica Sinica, 2010, 59(3): 2131-2136.doi:10.7498/aps.59.2131 |
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Wang Lai, Zhang Xian-Peng, Xi Guang-Yi, Zhao Wei, Li Hong-Tao, Jiang Yang, Han Yan-Jun, Luo Yi.Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy. Acta Physica Sinica, 2008, 57(9): 5923-5927.doi:10.7498/aps.57.5923 |
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Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min.Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica, 2007, 56(7): 4117-4121.doi:10.7498/aps.56.4117 |
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Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min.A new small signal physical model of InP-based composite channel high electron mobility transistor. Acta Physica Sinica, 2006, 55(7): 3617-3621.doi:10.7498/aps.55.3617 |
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan.An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica, 2006, 55(11): 6090-6094.doi:10.7498/aps.55.6090 |
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Yang Jing, Li Jing-Zhen, Sun Xiu-Quan, Gong Xiang-Dong.Simulation of step response of silane low-temperature pasma(1). Acta Physica Sinica, 2005, 54(7): 3251-3256.doi:10.7498/aps.54.3251 |
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Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping.Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica, 2005, 54(6): 2918-2923.doi:10.7498/aps.54.2918 |
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