- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract
A simple model of the graded heterojunction in ALGaInP compound semiconductors was introduced to analyze the energy band profile.We analyze the energy band profiles with the different grading ways but the same grading length,under the different doping densities.We analyze the effect of the different grading lengths on the surplus of the spike potential to the potential of the n region under the different doping densities.We analyze the effect of the graded heterojunction,finding it can improve the HB-LED (high-brightness light emitting diode)performance,and proved by the experiment.A graded heterojunction should be applied to HB-LED,based on this analysis.

Keywords:
AlGaInP/

heterojunction/

graded/

LED
Authors and contacts
Liu Lu¹,

Fan Guang-Han¹,

Liao Chang-Jun²,

Cao Ming-De¹,

Chen Gui-Chu¹,

Chen Lian-Hui¹
References

Cited By

[1]	Liu Jun-Ling, Bai Yu-Jie, Xu Ning, Zhang Qin-Fang.First-principles study on electronic structure of GaS/Mg(OH)₂heterostructure. Acta Physica Sinica, 2024, 73(13): 137103.doi:10.7498/aps.73.20231979
[2]	Ding Jun, Wen Li-Wei, Li Rui-Xue, Zhang Ying.Control of electric properties of silicene heterostructure by reversal of ferroelectric polarization. Acta Physica Sinica, 2022, 71(17): 177303.doi:10.7498/aps.71.20220815
[3]	Bai Liang, Zhao Qi-Xu, Shen Jian-Wei, Yang Yan, Yuan Qing-Hong, Zhong Cheng, Sun Hai-Tao, Sun Zhen-Rong.Computational screening of photocathodes based on layered MXene coated Cs₃Sb heterostructures. Acta Physica Sinica, 2021, 70(21): 218504.doi:10.7498/aps.70.20210956
[4]	Long Hui, Hu Jian-Wei, Wu Fu-Gen, Dong Hua-Feng.Ultrafast pulse lasers based on two-dimensional nanomaterial heterostructures as saturable absorber. Acta Physica Sinica, 2020, 69(18): 188102.doi:10.7498/aps.69.20201235
[5]	Feng Qiu-Ju, Jiang Jun-Yan, Tang Kai, Lü Jia-Yin, Liu Yang, Li Rong, Guo Hui-Ying, Xu Kun, Song Zhe, Li Meng-Ke.p-ZnO thin film/n-Si heterojunction light-emitting diode fabricated by chemical vapor deposition and its characterization. Acta Physica Sinica, 2013, 62(5): 057802.doi:10.7498/aps.62.057802
[6]	Ding Wen-Ge, Sang Yun-Gang, Yu Wei, Yang Yan-Bin, Teng Xiao-Yun, Fu Guang-Sheng.Current transport mechanism in silicon-rich silicon nitride/c-Si heterojunction. Acta Physica Sinica, 2012, 61(24): 247304.doi:10.7498/aps.61.247304
[7]	Zuo Ying-Hong, Wang Jian-Guo, Fan Ru-Yu.Influence of diode gap distance on space charge effects in field emission. Acta Physica Sinica, 2012, 61(21): 215202.doi:10.7498/aps.61.215202
[8]	Zhao Geng, Cheng Xiao-Man, Tian Hai-Jun, Du Bo-Qun, Liang Xiao-Yu, Wu Feng.The influence of modified electrodes by V2O5 film on the performance of ambipolar organic field-effect transistors based on C60/Pentacene. Acta Physica Sinica, 2012, 61(21): 218502.doi:10.7498/aps.61.218502
[9]	Wu Li-Hua, Zhang Xiao-Zhong, Yu Yi, Wan Cai-Hua, Tan Xin-Yu.Photovoltaic effect of a-C: Fe/AlOx /Si based heterostructures. Acta Physica Sinica, 2011, 60(3): 037807.doi:10.7498/aps.60.037807
[10]	Li Yan-Wu, Liu Peng-Yi, Hou Lin-Tao, Wu Bing.Heterojunction organic solar cells with Rubrene as electron transporting layer. Acta Physica Sinica, 2010, 59(2): 1248-1251.doi:10.7498/aps.59.1248
[11]	Wang Xiu-Mei, He Ji-Zhou, He Xian, Xiao Yu-Ling.Performance characteristics of an irreversible engine consisting of nonlinear diodes system. Acta Physica Sinica, 2010, 59(7): 4460-4465.doi:10.7498/aps.59.4460
[12]	Zhang Wei-Ying, Wu Xiao-Peng, Sun Li-Jie, Lin Bi-Xia, Fu Zhu-Xi.Study on the photovoltaic conversion of ZnO/Si heterojunction. Acta Physica Sinica, 2008, 57(7): 4471-4475.doi:10.7498/aps.57.4471
[13]	Wu Kai-Shun, Long Xing-Teng, Dong Jian-Wen, Chen Di-Hu, Wang He-Zhou.Phase properties of photonic crystal heterostructure and its applications. Acta Physica Sinica, 2008, 57(10): 6381-6385.doi:10.7498/aps.57.6381
[14]	Sun Hui, Zhang Qi-Feng, Wu Jin-Lei.Ultraviolet light emitting diode based on ZnO nanowires. Acta Physica Sinica, 2007, 56(6): 3479-3482.doi:10.7498/aps.56.3479
[15]	Zhang Yong-Hui, Chang An-Bi, Xiang Fei, Song Fa-Lun, Kang Qiang, Luo Min, Li Ming-Jia, Gong Sheng-Gang.Repetition rate of intense current electron-beam diodes using 20 GW pulsed source. Acta Physica Sinica, 2007, 56(10): 5754-5757.doi:10.7498/aps.56.5754
[16]	Wang Kun, Yao Shu-De, Hou Li-Na, Ding Zhi-Bo, Yuan Hong-Tao, Du Xiao-Long, Xue Qi-Kun.Depth-dependent elastic strain in ZnO/Zn0.9Mg0.1O/ZnO heterostructure studied by Rutherford backscattering/channeling. Acta Physica Sinica, 2006, 55(6): 2892-2896.doi:10.7498/aps.55.2892
[17]	Guan Chun-Ying, Yuan Li-Bo.Analysis of band gap in honeycomb photonic crystal heterostructure. Acta Physica Sinica, 2006, 55(3): 1244-1247.doi:10.7498/aps.55.1244
[18]	Li Dong-Lin, Zeng Yi-Ping.Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors. Acta Physica Sinica, 2006, 55(7): 3677-3682.doi:10.7498/aps.55.3677
[19]	Zeng Hui, Hu Hui-Fang, Wei Jian-Wei, Xie Fang, Peng Ping.Electronic transport properties of single-wall carbon nanotube with pentagon-heptagon-pair defect. Acta Physica Sinica, 2006, 55(9): 4822-4827.doi:10.7498/aps.55.4822
[20]	Shen Zi-Cai, Shao Jian-Da, Wang Ying-Jian, Fan Zheng-Xiu.Theoretical study of graded-index coatings prepared by glancing angle deposition. Acta Physica Sinica, 2005, 54(7): 3069-3074.doi:10.7498/aps.54.3069

Catalog

Vol. 52, Issue 5 - 2003-03-05

Metrics

Abstract views:7498
PDF Downloads:976
Cited By:0

Search

Article

留言板

Abstract

Authors and contacts

References

Cited By

Catalog

Metrics

Authors

Referees

About Journal

About

Search

Article

留言板

Abstract

Authors and contacts

References

Cited By

Catalog

Metrics

Publishing process

Authors

Referees

About Journal

About