[1] |
Tang Wen-Hui, Liu Bang-Wu, Zhang Bo-Cheng, Li Min, Xia Yang.Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition. Acta Physica Sinica, 2017, 66(9): 098101.doi:10.7498/aps.66.098101 |
[2] |
Fang Jia, Li Shuang-Liang, Xu Sheng-Zhi, Wei Chang-Chun, Zhao Ying, Zhang Xiao-Dan.Analysis on steady plasma process of high-rate microcrystalline silicon by optical emission spectroscopy. Acta Physica Sinica, 2013, 62(16): 168103.doi:10.7498/aps.62.168103 |
[3] |
Li Zhi-Guo, Liu Wei, He Jing-Jing, Li Zu-Liang, Han An-Jun, Zhang Chao, Zhou Zhi-Qiang, Zhang Yi, Sun Yun.Influences of deposition rate in second stage on the Cu(In,Ga)Se2 thin film and device prepared by low-temperature process. Acta Physica Sinica, 2013, 62(3): 038803.doi:10.7498/aps.62.038803 |
[4] |
Feng Jia-Heng, Tang Li-Dan, Liu Bang-Wu, Xia Yang, Wang Bing.Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition. Acta Physica Sinica, 2013, 62(11): 117302.doi:10.7498/aps.62.117302 |
[5] |
Kang Kun-Yong, Deng Shu-Kang, Shen Lan-Xian, Sun Qi-Li, Hao Rui-Ting, Hua Qi-Lin, Tang Run-Sheng, Yang Pei-Zhi, Li Ming.Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization. Acta Physica Sinica, 2012, 61(19): 198101.doi:10.7498/aps.61.198101 |
[6] |
Su Yuan-Jun, Xu Jun, Zhu Ming, Fan Peng-Hui, Dong Chuang.Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering. Acta Physica Sinica, 2012, 61(2): 028104.doi:10.7498/aps.61.028104 |
[7] |
Xia Zhi-Lin, Guo Pei-Tao, Xue Yi-Yu, Huang Cai-Hua, Li Zhan-Wang.Investigation of the plasma bursting process in short pulsed laser induced film damage. Acta Physica Sinica, 2010, 59(5): 3523-3530.doi:10.7498/aps.59.3523 |
[8] |
Ding Yan-Li, Zhu Zhi-Li, Gu Jin-Hua, Shi Xin-Wei, Yang Shi-E, Gao Xiao-Yong, Chen Yong-Sheng, Lu Jing-Xiao.Effect of deposition rate on the scaling behavior of microcrystalline silicon films prepared by very high frequency-plasma enhanced chemical vapor deposition. Acta Physica Sinica, 2010, 59(2): 1190-1195.doi:10.7498/aps.59.1190 |
[9] |
Li Yong, Sun Cheng-Wei, Liu Zhi-Wen, Zhang Qing-Yu.Study of ZnO film growth by reactive magnetron sputtering using plasma emission spectra. Acta Physica Sinica, 2006, 55(8): 4232-4237.doi:10.7498/aps.55.4232 |
[10] |
Wang Bi-Ben, Xu Xing-Zi, Zhang Bing.Growth of carbon nanotips by plasma-enhanced hot filament chemical vapor deposition. Acta Physica Sinica, 2006, 55(2): 941-946.doi:10.7498/aps.55.941 |
[11] |
Gu Jin-Hua, Zhou Yu-Qin, Zhu Mei-Fang, Li Guo-Hua, Ding Kun, Zhou Bing-Qing, Liu Feng-Zhen, Liu Jin-Long, Zhang Qun-Fang.Study on growth mechanism of low-temperature prepared microcrystalline Si thin f ilms. Acta Physica Sinica, 2005, 54(4): 1890-1894.doi:10.7498/aps.54.1890 |
[12] |
Hu Yue-Hui, Yin Sheng-Yi, Chen Guang-Hua, Wu Yue-Ying, Zhou Xiao-Ming, Zhou Jian-Er, Wang Qing, Zhang Wen-Li.Investigation of a-Si:H film characteristics influenced by magnetic field gradient in MWECR CVD plasma system. Acta Physica Sinica, 2004, 53(7): 2263-2269.doi:10.7498/aps.53.2263 |
[13] |
Chen Yi-Kuang, Lin Kui-Xun, Luo Zhi, Liang Rui-Sheng, Zhou Fu-Fang.Aluminum-induced rapid crystallization of a-Si films at low temperatures in an electric field and microstructure analyses of the crystallized films. Acta Physica Sinica, 2004, 53(2): 582-586.doi:10.7498/aps.53.582 |
[14] |
Qin Fu-Wen, Gu Biao, Xu Yin, Yang Da-Zhi.Study on lowtemperature growth of AlN single crystal film by ECRPEMOCVD. Acta Physica Sinica, 2003, 52(5): 1240-1244.doi:10.7498/aps.52.1240 |
[15] |
Lin Kui-Xun, Lin Xuan-Ying, Liang Hou-Yun, Chi Ling-Fei, Yu Chu-Ying, Huang Chuang-Jun.. Acta Physica Sinica, 2002, 51(4): 863-866.doi:10.7498/aps.51.863 |
[16] |
YE CHAO, NING ZHAO-YUAN, CHENG SHAN-HUA.OPTICAL PROPERTIES OF AMORPHOUS FLUORINATED CARBON FILMS PREPARED BY ELECTRON CYCLOTRON RESONANCE PLASMA. Acta Physica Sinica, 2001, 50(10): 2017-2022.doi:10.7498/aps.50.2017 |
[17] |
HU YING.SiC NANOWIRES GROWN ON SILICON(100) WAFER BY MPCVD METHOD. Acta Physica Sinica, 2001, 50(12): 2452-2455.doi:10.7498/aps.50.2452 |
[18] |
HE DE-YAN.CONTROL OF THE SURFACE REACTIONS DURING THE LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SILICON FILMS. Acta Physica Sinica, 2001, 50(4): 779-783.doi:10.7498/aps.50.779 |
[19] |
DU XIAO-LONG, CHEN GUANG-CHAO, JIANG DE-YI, YAO XIN-ZI, ZHU HE-SUN.PROPERTIES OF ELECTRON CYCLOTRON RESONANCE PLASMAS AND THEIR INFLUENCE ON THE DEPOSITION OF GaN FILMS. Acta Physica Sinica, 1999, 48(2): 257-266.doi:10.7498/aps.48.257 |
[20] |
ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG.LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1988, 37(10): 1607-1612.doi:10.7498/aps.37.1607 |