Raman spectra of porous silicon are obtained using 457.5nm laser line, from which some relations between peak parameters and laser powers are obtained. Our previous theoretical research demonstrated that the increase of laser power leads to the increase of local temperature, and this results in the shrink of local size which gives rise to the variation of a series of peak parameters. In this article we discuss and calculate in detail the influence of laser power on the local temperature of porous silicon, which set the experimental basis for the quantitative measurement of temperature utilizing Raman spectrum.
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