| [1] |
Ma Ping, Han Yi-Ping, Zhang Ning, Tian De-Yang, Shi An-Hua, Song Qiang.Experimental investigation on all-target electromagnetic scattering characteristics of hypervelocity HTV2-like flight model. Acta Physica Sinica, 2022, 71(8): 084101.doi:10.7498/aps.71.20211901 |
| [2] |
Liu Chang-Shi.A reliable and accurate model of photoelectron yield spectrum and its applications. Acta Physica Sinica, 2021, 70(10): 103301.doi:10.7498/aps.70.20201729 |
| [3] |
Xie Tian-Ci, Zhang Bin, He Bo, Li Hao-Peng, Qin Zhuang, Qian Jin-Qian, Shi Qie-Ming, Lewis Elfed, Sun Wei-Min.Mathematical algorithm model of absolute dose in radiotherapy. Acta Physica Sinica, 2021, 70(1): 018701.doi:10.7498/aps.70.20200986 |
| [4] |
Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei.Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301.doi:10.7498/aps.70.20210700 |
| [5] |
Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He.The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances. Acta Physica Sinica, 2020, 69(7): 077302.doi:10.7498/aps.69.20191931 |
| [6] |
Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming.Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica, 2016, 65(1): 018501.doi:10.7498/aps.65.018501 |
| [7] |
Sun Yun-Li, Wang Chang-Hui, Le Zi-Chun.Analysis of the tunable liquid gradient index based on optofluidics. Acta Physica Sinica, 2014, 63(15): 154701.doi:10.7498/aps.63.154701 |
| [8] |
Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue.A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301.doi:10.7498/aps.61.047301 |
| [9] |
Jiang Zhi-Hong, Wang Hui, Gao Chao.A evolving network model generated by random walk and policy attachment. Acta Physica Sinica, 2011, 60(5): 058903.doi:10.7498/aps.60.058903 |
| [10] |
Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong.An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica, 2011, 60(9): 097302.doi:10.7498/aps.60.097302 |
| [11] |
Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
| [12] |
Shen Zi-Cai, Kong Wei-Jin, Feng Wei-Quan, Ding Yi-Gang, Liu Yu-Ming, Zheng Hui-Qi, Zhao Xue, Zhao Chun-Qing.Degradation model of the optical properties of the thermal control coatings. Acta Physica Sinica, 2009, 58(2): 860-864.doi:10.7498/aps.58.860 |
| [13] |
Li Qi, Zhang Bo, Li Zhao-Ji.A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica, 2008, 57(3): 1891-1896.doi:10.7498/aps.57.1891 |
| [14] |
Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi.Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica, 2007, 56(6): 3504-3508.doi:10.7498/aps.56.3504 |
| [15] |
Shen Zi-Cai, Shen Jian, Liu Shi-Jie, Kong Wei-Jin, Shao Jian-Da, Fan Zheng-Xiu.Discussion on the stratified merit of graded index coatings. Acta Physica Sinica, 2007, 56(3): 1325-1328.doi:10.7498/aps.56.1325 |
| [16] |
Liu Jing, Sun Jun-Qiang, Huang De-Xiu, Huang Chong-Qing, Wu Ming.Modulated photon confined states with graded-index photonic quantum well structure. Acta Physica Sinica, 2007, 56(4): 2281-2285.doi:10.7498/aps.56.2281 |
| [17] |
Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng.Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica, 2006, 55(7): 3622-3628.doi:10.7498/aps.55.3622 |
| [18] |
Shen Zi-Cai, Kong Wei-Jin, Liu Shi-Jie, Shen Jian, Shao Jian-Da, Fan Zheng-Xiu.Refractive index analysis of graded index coatings prepared by glancing angle deposition. Acta Physica Sinica, 2006, 55(10): 5157-5160.doi:10.7498/aps.55.5157 |
| [19] |
Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua.A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica, 2003, 52(8): 2046-2051.doi:10.7498/aps.52.2046 |
| [20] |
LIU HONG-XIA, FANG JIAN-PING, HAO YUE.EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica, 2001, 50(6): 1172-1177.doi:10.7498/aps.50.1172 |
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