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Xu Hua, Liu Jing-Dong, Cai Wei, Li Min, Xu Miao, Tao Hong, Zou Jian-Hua, Peng Jun-Biao.Effect of N2O treatment on performance of back channel etched metal oxide thin film transistors. Acta Physica Sinica, 2022, 71(5): 058503.doi:10.7498/aps.71.20211350 |
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Liu Yuan, He Hong-Yu, Chen Rong-Sheng, Li Bin, En Yun-Fei, Chen Yi-Qiang.Low-frequency noise in hydrogenated amorphous silicon thin film transistor. Acta Physica Sinica, 2017, 66(23): 237101.doi:10.7498/aps.66.237101 |
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Xu Piao-Rong, Qiang Lei, Yao Ruo-He.A technique for extracting the density of states of the linear region in an amorphous InGaZnO thin film transistor. Acta Physica Sinica, 2015, 64(13): 137101.doi:10.7498/aps.64.137101 |
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Zhu Le-Yong, Gao Ya-Na, Zhang Jian-Hua, Li Xi-Feng.High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductor. Acta Physica Sinica, 2015, 64(16): 168501.doi:10.7498/aps.64.168501 |
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Ning Hong-Long, Hu Shi-Ben, Zhu Feng, Yao Ri-Hui, Xu Miao, Zou Jian-Hua, Tao Hong, Xu Rui-Xia, Xu Hua, Wang Lei, Lan Lin-Feng, Peng Jun-Biao.Improved performance of the amorphous indium-gallium-zinc oxide thin film transistor with Cu-Mo source/drain electrode. Acta Physica Sinica, 2015, 64(12): 126103.doi:10.7498/aps.64.126103 |
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Liu Yuan, Wu Wei-Jing, Li Bin, En Yun-Fei, Wang Lei, Liu Yu-Rong.Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors. Acta Physica Sinica, 2014, 63(9): 098503.doi:10.7498/aps.63.098503 |
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Xu Hua, Lan Lin-Feng, Li Min, Luo Dong-Xiang, Xiao Peng, Lin Zhen-Guo, Ning Hong-Long, Peng Jun-Biao.Effect of source/drain preparation on the performance of oxide thin-film transistors. Acta Physica Sinica, 2014, 63(3): 038501.doi:10.7498/aps.63.038501 |
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Zhang Geng-Ming, Guo Li-Qiang, Zhao Kong-Sheng, Yan Zhong-Hui.Effect of oxygen on stability performance of the IZO junctionless thin film transistors. Acta Physica Sinica, 2013, 62(13): 137201.doi:10.7498/aps.62.137201 |
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Wu Ping, Zhang Jie, Li Xi-Feng, Chen Ling-Xiang, Wang Lei, Lü Jian-Guo.Ultraviolet photoresponse of ZnO thin-film transistor fabricated at room temperature. Acta Physica Sinica, 2013, 62(1): 018101.doi:10.7498/aps.62.018101 |
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Li Shuai-Shuai, Liang Chao-Xu, Wang Xue-Xia, Li Yan-Hui, Song Shu-Mei, Xin Yan-Qing, Yang Tian-Lin.The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors. Acta Physica Sinica, 2013, 62(7): 077302.doi:10.7498/aps.62.077302 |
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Li Xi-Feng, Xin En-Long, Shi Ji-Feng, Chen Long-Long, Li Chun-Ya, Zhang Jian-Hua.Stability of low temperature and transparent amorphous InGaZnO thin film transistor under illumination. Acta Physica Sinica, 2013, 62(10): 108503.doi:10.7498/aps.62.108503 |
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Zhao Kong-Sheng, Xuan Rui-Jie, Han Xiao, Zhang Geng-Ming.Junctionless low-voltage thin-film transistors based on indium-tin-oxide. Acta Physica Sinica, 2012, 61(19): 197201.doi:10.7498/aps.61.197201 |
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Chen Xiao-Xue, Yao Ruo-He.DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica, 2012, 61(23): 237104.doi:10.7498/aps.61.237104 |
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Qiang Lei, Yao Ruo-He.Distributions of the threshold voltage and the temperature in the channel of amorphous silicon thin film transistors. Acta Physica Sinica, 2012, 61(8): 087303.doi:10.7498/aps.61.087303 |
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Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang, Wu Hui-Zhen.Study of zinc tin oxide thin-film transistor. Acta Physica Sinica, 2011, 60(3): 037305.doi:10.7498/aps.60.037305 |
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Chen Ying-Tian, T. H. Ho.Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica, 2011, 60(7): 078104.doi:10.7498/aps.60.078104 |
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Xu Tian-Ning, Wu Hui-Zhen, Zhang Ying-Ying, Wang Xiong, Zhu Xia-Ming, Yuan Zi-Jian.Fabrication and performance of indium oxide based transparent thin film transistors. Acta Physica Sinica, 2010, 59(7): 5018-5022.doi:10.7498/aps.59.5018 |
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Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong.Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. Acta Physica Sinica, 2010, 59(12): 8770-8775.doi:10.7498/aps.59.8770 |
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Li He, Li Xue-Dong, Li Juan, Wu Chun-Ya, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Li-Zhu.Investigation on the improvement of the stability and uniformity of solution-based metal-induced crystallization poly-Si using surface-embellishment. Acta Physica Sinica, 2008, 57(4): 2476-2480.doi:10.7498/aps.57.2476 |
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Zhao Shu-Yun, Wu Chun-Ya, Li Juan, Liu Jian-Ping, Zhang Xiao-Dan, Zhang Li-Zhu, Meng Zhi-Guo, Xiong Shao-Zhen.The research on metal induced crystallization with chemical source. Acta Physica Sinica, 2006, 55(2): 825-829.doi:10.7498/aps.55.825 |
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