[1] |
Zhang Sheng-Bo, Zhang Huan-Hao, Chen Zhi-Hua, Zheng Chun.Influence of different interface component distributions on Richtmyer-Meshkov instability. Acta Physica Sinica, 2023, 72(10): 105202.doi:10.7498/aps.72.20222090 |
[2] |
Niu Di, Jiang Han.Influence of interface kinetics parameters on the overall fluctuation instability of the interface morphology of deep cell crystal. Acta Physica Sinica, 2022, 71(16): 168101.doi:10.7498/aps.71.20220322 |
[3] |
Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen.Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environment. Acta Physica Sinica, 2021, 70(15): 156101.doi:10.7498/aps.70.20210351 |
[4] |
Zhao Jin-Yu, Yang Jian-Qun, Dong Lei, Li Xing-Ji.Hydrogen soaking irradiation acceleration method: application to and damage mechanism analysis on 3DG111 transistors. Acta Physica Sinica, 2019, 68(6): 068501.doi:10.7498/aps.68.20181992 |
[5] |
Jiang Ping-Guo, Wang Zheng-Bing, Yan Yong-Bo, Liu Wen-Jie.First-principles study of absorption mechanism of hydrogen on W20O58 (010) surface. Acta Physica Sinica, 2017, 66(24): 246801.doi:10.7498/aps.66.246801 |
[6] |
Jiang Ping-Guo, Wang Zheng-Bing, Yan Yong-Bo.First-principles study on adsorption mechanism of hydrogen on tungsten trioxide surface. Acta Physica Sinica, 2017, 66(8): 086801.doi:10.7498/aps.66.086801 |
[7] |
Liu Jun, Feng Qi-Jing, Zhou Hai-Bing.Simulation study of interface instability in metals driven by cylindrical implosion. Acta Physica Sinica, 2014, 63(15): 155201.doi:10.7498/aps.63.155201 |
[8] |
Xia Tong-Jun, Dong Yong-Qiang, Cao Yi-Gang.Effects of surface tension on Rayleigh-Taylor instability. Acta Physica Sinica, 2013, 62(21): 214702.doi:10.7498/aps.62.214702 |
[9] |
Shi Lei, Qian Mu-Yang, Xiao Kun-Xiang, Li Ming.Simulation study on hydrogen penning source discharge at low pressure. Acta Physica Sinica, 2013, 62(17): 175205.doi:10.7498/aps.62.175205 |
[10] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang.A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica, 2012, 61(6): 067801.doi:10.7498/aps.61.067801 |
[11] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang.A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica, 2012, 61(10): 107803.doi:10.7498/aps.61.107803 |
[12] |
Liu Hua-Min, Fan Yong-Sheng, Tian Shi-Hai, Zhou Wei, Chen Xu.Molecular dynamics simulation for the effect of hydrogen on the water of pressurized water reactors. Acta Physica Sinica, 2012, 61(6): 062801.doi:10.7498/aps.61.062801 |
[13] |
Cao Jian-Min, He Wei, Huang Si-Wen, Zhang Xu-Lin.Dependence of the DC stress negative bias temperature instability effect on basic device parameters in pMOSFET. Acta Physica Sinica, 2012, 61(21): 217305.doi:10.7498/aps.61.217305 |
[14] |
Chen Wei-Hua, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Zhang Tian-Fu, Zhang Xue.A model considering the ionizing radiation effects in MOS structure. Acta Physica Sinica, 2009, 58(6): 4090-4095.doi:10.7498/aps.58.4090 |
[15] |
Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue.Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica, 2008, 57(7): 4487-4491.doi:10.7498/aps.57.4487 |
[16] |
Sun Guang-Ai, Hu Gang-Yi, Yang Mo-Hua, Xu Shi-Liu, Zhang Zheng-Fan, Liu Yu-Kui, He Kai-Quan, Zhong Yi.Study of conductive property for a N-VDMOS interface trap under X-ray radiation. Acta Physica Sinica, 2008, 57(3): 1872-1877.doi:10.7498/aps.57.1872 |
[17] |
Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin.A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica, 2007, 56(6): 3400-3406.doi:10.7498/aps.56.3400 |
[18] |
Liu Hong Xia, Zheng Xue Feng, Hao Yue.Degradation and physical mechanism of NBT in deep submicron PMOSFET's. Acta Physica Sinica, 2005, 54(3): 1373-1377.doi:10.7498/aps.54.1373 |
[19] |
Chao Ming-Ju, Ding Pei, Zhang Hong-Rui, Guo Mao-Tian, Liang Er-Jun.The effect of hydrogen and nitrogen on the growth of boron carbonitride nanotubes. Acta Physica Sinica, 2004, 53(3): 936-941.doi:10.7498/aps.53.936 |
[20] |
JIA WEI-YI, ZHANG PENG-XIANG.ON THE OPTIMUM COMPENSATION OF THE TEMPERATURE INSTABILITIES CAUSED BY THE MAGNETOCRYSTALLINE ANISOTROPY FIELD IN YIG MICROWAVE DEVICES. Acta Physica Sinica, 1976, 25(3): 254-264.doi:10.7498/aps.25.254 |