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The spin-polarized tunneling current transport through a ferromagnetic GaMnN resonant tunneling diode is investigated theoretically. Two distinct spin splitting peaks can be observed in the current-voltage characteristic. Spin splitting peaks and the spin polarization decrease and then disappear with increasing temperature. When charge polarization effect is considered for the GaN heterostructure, the spin-down resonant current peak becomes enhanced significantly and spin polarization is also increased accordingly. A highly spin polarized current can be obtained at a certain polarization charge.
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Keywords:
- GaMnN/
- resonant tunneling/
- spin polarized current/
- polarization charge
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