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Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao.Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2024, 73(11): 118501.doi:10.7498/aps.73.20240144 |
[2] |
Ji Ting-Wei, Bai Gang.Effect of biaxial misfit strain on properties of ferroelectric double gate negative capacitance transistors. Acta Physica Sinica, 2023, 72(6): 067701.doi:10.7498/aps.72.20222190 |
[3] |
Tian Jin-Peng, Wang Shuo-Pei, Shi Dong-Xia, Zhang Guang-Yu.Vertical short-channel MoS2field-effect transistors. Acta Physica Sinica, 2022, 71(21): 218502.doi:10.7498/aps.71.20220738 |
[4] |
Zhao Li-Li, Wu Meng-Meng, Lin Wen-Lu, Liu Yang.Contactless transport method of two-dimensional electron system studies. Acta Physica Sinica, 2022, 71(12): 127303.doi:10.7498/aps.71.20220246 |
[5] |
Lu Bin, Wang Da-Wei, Chen Yu-Lei, Cui Yan, Miao Yuan-Hao, Dong Lin-Peng.Capacitance model for nanowire gate-all-around tunneling field-effect-transistors. Acta Physica Sinica, 2021, 70(21): 218501.doi:10.7498/aps.70.20211128 |
[6] |
Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei.Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301.doi:10.7498/aps.70.20210700 |
[7] |
Chen Jun-Dong, Han Wei-Hua, Yang Chong, Zhao Xiao-Song, Guo Yang-Yan, Zhang Xiao-Di, Yang Fu-Hua.Recent research progress of ferroelectric negative capacitance field effect transistors. Acta Physica Sinica, 2020, 69(13): 137701.doi:10.7498/aps.69.20200354 |
[8] |
Zhou Guang-Zheng, Li Ying, Lan Tian, Dai Jing-Jing, Wang Cong-Cong, Wang Zhi-Yong.Design and simulation of integration of vertical cavity surface emitting lasers and heterojunction bipolar transistor. Acta Physica Sinica, 2019, 68(20): 204203.doi:10.7498/aps.68.20190529 |
[9] |
Zhu Qi, Yuan Xie-Tao, Zhu Yi-Hao, Zhang Xiao-Hua, Yang Zhao-Hui.Flexible solid-state supercapacitors based on shrunk high-density aligned carbon nanotube arrays. Acta Physica Sinica, 2018, 67(2): 028201.doi:10.7498/aps.67.20171855 |
[10] |
Guo Li-Qiang, Wen Juan, Cheng Guang-Gui, Yuan Ning-Yi, Ding Jian-Ning.Dual in-plane-gate coupled IZO thin film transistor based on capacitive coupling effect in KH550-GO solid electrolyte. Acta Physica Sinica, 2016, 65(17): 178501.doi:10.7498/aps.65.178501 |
[11] |
Zhao Yu, Wei Ai-Xiang, Liu Jun.Junction temperature measurement of light-emitting diodes using temperature-dependent capacitance. Acta Physica Sinica, 2015, 64(11): 118501.doi:10.7498/aps.64.118501 |
[12] |
Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu.A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2015, 64(6): 067305.doi:10.7498/aps.64.067305 |
[13] |
Yang Dan, Zhang Li, Yang Sheng-Yi, Zou Bing-Suo.Low-voltage pentacene photodetector based on a vertical transistor configuration. Acta Physica Sinica, 2015, 64(10): 108503.doi:10.7498/aps.64.108503 |
[14] |
Wu Chuan-Lu, Ma Ying, Jiang Li-Mei, Zhou Yi-Chun, Li Jian-Cheng.Computer simulation of electric properties of metal-ferroelectric-substrate structured ferroelectric field effect transistor under ionizing radiation. Acta Physica Sinica, 2014, 63(21): 216102.doi:10.7498/aps.63.216102 |
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Song De-Hua, Lü Meng-Fei, Ren Xiang, Li Meng-Meng, Zu Yun-Xiao.Basic properties and applications of the memristor circuit. Acta Physica Sinica, 2012, 61(11): 118101.doi:10.7498/aps.61.118101 |
[16] |
Zou Jian-Hua, Lan Lin-Feng, Xu Rui-Xia, Yang Wei, Peng Jun-Biao.Integration of organic thin-film transistor and polymer light-emitting diodes. Acta Physica Sinica, 2010, 59(2): 1275-1281.doi:10.7498/aps.59.1275 |
[17] |
Sun Qin-Jun, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Gao Li-Yan, Tian Xue-Yan, Wang Yong-Sheng.Contact effect in organic thin film transistors. Acta Physica Sinica, 2010, 59(11): 8125-8130.doi:10.7498/aps.59.8125 |
[18] |
Yang Sheng-Yi, Du Wen-Shu, Qi Jie-Ru, Lou Zhi-Dong.Optoelectronic characteristics of NPB-based vertical organic light-emitting transistors. Acta Physica Sinica, 2009, 58(5): 3427-3432.doi:10.7498/aps.58.3427 |
[19] |
Su Jie, Wang Ji-Suo, Liang Bao-Long, Zhang Xiao-Yan.The energy and thermal effects of mesoscopic capacitance coupling LC circuit at finite temperature. Acta Physica Sinica, 2008, 57(11): 7216-7220.doi:10.7498/aps.57.7216 |
[20] |
Huang Wen-Bo, Zeng Wen-Jin, Wang Li, Peng Jun-Biao.Negative capacitance in polymer light-emitting diodes. Acta Physica Sinica, 2008, 57(9): 5983-5988.doi:10.7498/aps.57.5983 |