[1] |
Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming.Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica, 2016, 65(1): 018501.doi:10.7498/aps.65.018501 |
[2] |
Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin.Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica, 2015, 64(3): 038501.doi:10.7498/aps.64.038501 |
[3] |
Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng.Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica, 2014, 63(23): 237302.doi:10.7498/aps.63.237302 |
[4] |
Liu Wei-Feng, Song Jian-Jun.Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductor. Acta Physica Sinica, 2014, 63(23): 238501.doi:10.7498/aps.63.238501 |
[5] |
Jin Zhao, Qiao Li-Ping, Guo Chen, Wang Jiang-An, Richard C. Liu.Electronic conductivity effective masses along arbitrary directional channel in uniaxial strained Si(001). Acta Physica Sinica, 2013, 62(5): 058501.doi:10.7498/aps.62.058501 |
[6] |
Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan.The model of valence-band dispersion for strained Ge/Si1-xGex. Acta Physica Sinica, 2012, 61(13): 137104.doi:10.7498/aps.61.137104 |
[7] |
Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan.Anisotropy and isotropy of hole effective mass of strained Ge. Acta Physica Sinica, 2012, 61(23): 237102.doi:10.7498/aps.61.237102 |
[8] |
Wang Xiao-Yan, Zhang He-Ming, Song Jian-Jun, Ma Jian-Li, Wang Guan-Yu, An Jiu-Hua.Electron mobility of strained Si/(001)Si1- x Ge x. Acta Physica Sinica, 2011, 60(7): 077205.doi:10.7498/aps.60.077205 |
[9] |
Zhao Li-Xia, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi.Model of electronical conductivity effective mass of strained Si. Acta Physica Sinica, 2010, 59(9): 6545-6548.doi:10.7498/aps.59.6545 |
[10] |
Wu Hui-Ting, Wang Hai-Long, Jiang Li-Ming.Effect of different effective mass and electric field on the electronic structure in GaN/AlxGa1-xN spherical quantum dot. Acta Physica Sinica, 2009, 58(1): 465-470.doi:10.7498/aps.58.465 |
[11] |
Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Band structure of strained Si1-xGex. Acta Physica Sinica, 2009, 58(11): 7947-7951.doi:10.7498/aps.58.7947 |
[12] |
Song Jian-Jun, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Dai Xian-Ying.Anisotropy of hole effective mass of strained Si/(001)Si1-xGex. Acta Physica Sinica, 2009, 58(7): 4958-4961.doi:10.7498/aps.58.4958 |
[13] |
Yang Fu-Hua, Tan Jin, Zhou Cheng-Gang, Luo Hong-Bo.Ab initio studies of CiCs and CiOi defects in Si1-xGex alloys. Acta Physica Sinica, 2008, 57(2): 1109-1116.doi:10.7498/aps.57.1109 |
[14] |
Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi.Band structure of strained Si/(111)Si1-xGex: a first principles investigation. Acta Physica Sinica, 2008, 57(9): 5918-5922.doi:10.7498/aps.57.5918 |
[15] |
Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi.Dispersion relation model of valence band in strained Si. Acta Physica Sinica, 2008, 57(11): 7228-7232.doi:10.7498/aps.57.7228 |
[16] |
SHI XIAO-HONG, LIU PU-LIN, GONG DA-WEI, CHEN ZHANG-HAI, SHI GUO-LIANG, SHEN XUE-CHU.PHOTOTHERMAL IONIZATION SPECTROSCOPY FOR SHALLOW DONOR IN Si1-xGex EPITAXIAL LAYER. Acta Physica Sinica, 1997, 46(2): 370-374.doi:10.7498/aps.46.370 |
[17] |
HUANG JING-YUN, YE ZHI-ZHEN, QUE DUAN-LIN.CALCULATION OF CRITICAL LAYER THICKNESS BY TAKING INTO ACCOUNT THE THERMAL STRAIN IN Si1-xGex /Si STRAIN LAYER HETEROSTRUCTURES. Acta Physica Sinica, 1997, 46(10): 2010-2014.doi:10.7498/aps.46.2010 |
[18] |
KE SAN-HUANG, HUANG MEI-CHUN, WANG REN-ZHI.VALENCE-BAND OFFSETS AT St/Ge STRAINED HETEROINTERFACES UNDER DIFFERENT STRAIN CONDITIONS. Acta Physica Sinica, 1996, 45(1): 107-112.doi:10.7498/aps.45.107 |
[19] |
KE SAN-HUANG, WANG REN-ZHI, HUANG MEI-CHUN.THEORETICAL STUDIES ON THE VALENCE-BAND OFFSETS AT STRAINED SEMICONDUCTOR SUPERLATTICES. Acta Physica Sinica, 1994, 43(1): 103-109.doi:10.7498/aps.43.103 |
[20] |
Zhang Fang-qing, Xu Xi-xiang, Chen Guang-hua, Jiang Zhi-chen, Chen Zhen-shi, Qi Shang-kui.STUDY OF VALENCE-BAND PROPERTIES IN a-Si1-xCx:H BY UV PHOTO-ELECTRON SPECTROSOPY. Acta Physica Sinica, 1986, 35(9): 1253-1258.doi:10.7498/aps.35.1253 |