[1] |
Zhang Zhan-Gang, Yang Shao-Hua, Lin Qian, Lei Zhi-Feng, Peng Chao, He Yu-Juan.Experimental study on real-time measurement of single-event effects of 14 nm FinFET and 28 nm planar CMOS SRAMs based on Qinghai-Tibet Plateau. Acta Physica Sinica, 2023, 72(14): 146101.doi:10.7498/aps.72.20230161 |
[2] |
Feng Jie, Cui Yi-Hao, Li Yu-Dong, Wen Lin, Guo Qi.Influence mechanism and recognition algorithm of CMOS active pixel sensor radiation damage on star sensor star map recognition. Acta Physica Sinica, 2022, 71(18): 184208.doi:10.7498/aps.71.20220894 |
[3] |
Li Shun, Song Yu, Zhou Hang, Dai Gang, Zhang Jian.Statistical characteristics of total ionizing dose effects of bipolar transistors. Acta Physica Sinica, 2021, 70(13): 136102.doi:10.7498/aps.70.20201835 |
[4] |
Cao Yang, Xi Kai, Xu Yan-Nan, Li Mei, Li Bo, Bi Jin-Shun, Liu Ming.Total ionizing dose effects ofγand X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell. Acta Physica Sinica, 2019, 68(3): 038501.doi:10.7498/aps.68.20181661 |
[5] |
Wang Shuo, Chang Yong-Wei, Chen Jing, Wang Ben-Yan, He Wei-Wei, Ge Hao.Total ionizing dose effects on innovative silicon-on-insulator static random access memory cell. Acta Physica Sinica, 2019, 68(16): 168501.doi:10.7498/aps.68.20190405 |
[6] |
Qin Li, Guo Hong-Xia, Zhang Feng-Qi, Sheng Jiang-Kun, Ouyang Xiao-Ping, Zhong Xiang-Li, Ding Li-Li, Luo Yin-Hong, Zhang Yang, Ju An-An.Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons. Acta Physica Sinica, 2018, 67(16): 166101.doi:10.7498/aps.67.20180829 |
[7] |
Ma Wu-Ying, Lu Wu, Guo Qi, He Cheng-Fa, Wu Xue, Wang Xin, Cong Zhong-Chao, Wang Bo, Maria.Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator. Acta Physica Sinica, 2014, 63(2): 026101.doi:10.7498/aps.63.026101 |
[8] |
Wang Bo, Li Yu-Dong, Guo Qi, Liu Chang-Ju, Wen Lin, Ma Li-Ya, Sun Jing, Wang Hai-Jiao, Cong Zhong-Chao, Ma Wu-Ying.Research on dark signal degradation in 60Co γ-ray-irradiated CMOS active pixel sensor. Acta Physica Sinica, 2014, 63(5): 056102.doi:10.7498/aps.63.056102 |
[9] |
Cong Zhong-Chao, Yu Xue-Feng, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Sun Jing, Wang Bo, Ma Wu-Ying, Ma Li-Ya, Zhou Hang.Online and offline test method of total dose radiation damage on static random access memory. Acta Physica Sinica, 2014, 63(8): 086101.doi:10.7498/aps.63.086101 |
[10] |
Zhang Xiao-Fu, Li Yu-Dong, Guo Qi, Luo Mu-Chang, He Cheng-Fa, Yu Xin, Shen Zhi-Hui, Zhang Xing-Yao, Deng Wei, Wu Zheng-Xin.60Coγ-radiation effects on the ideality factor of AlxGa1?xN p-i-n solar-blind detector with high content of aluminum. Acta Physica Sinica, 2013, 62(7): 076106.doi:10.7498/aps.62.076106 |
[11] |
Zhang Xing-Yao, Guo Qi, Lu Wu, Zhang Xiao-Fu, Zheng Qi-Wen, Cui Jiang-Wei, Li Yu-Dong, Zhou Dong.Serial ferroelectric memory ionizing radiation effects and annealing characteristics. Acta Physica Sinica, 2013, 62(15): 156107.doi:10.7498/aps.62.156107 |
[12] |
Wu Xue, Lu Wu, Wang Xin, Xi Shan-Bin, Guo Qi, Li Yu-Dong.Total ionizing dose effect on 0.18 μm narrow-channel NMOS transistors. Acta Physica Sinica, 2013, 62(13): 136101.doi:10.7498/aps.62.136101 |
[13] |
Li Ming, Yu Xue-Feng, Xue Yao-Guo, Lu Jian, Cui Jiang-Wei, Gao Bo.Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory. Acta Physica Sinica, 2012, 61(10): 106103.doi:10.7498/aps.61.106103 |
[14] |
Gao Bo, Liu Gang, Wang Li-Xin, Han Zheng-Sheng, Zhang Yan-Fei, Wang Chun-Ling, Wen Jing-Chao.Research on the total dose effects for domestic VDMOS devices used in satellite. Acta Physica Sinica, 2012, 61(17): 176107.doi:10.7498/aps.61.176107 |
[15] |
Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing.Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica, 2012, 61(24): 246101.doi:10.7498/aps.61.246101 |
[16] |
Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan.Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2011, 60(6): 068702.doi:10.7498/aps.60.068702 |
[17] |
Gu Wen-Ping, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua, Hao Yue.Influence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2009, 58(2): 1161-1165.doi:10.7498/aps.58.1161 |
[18] |
Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang.The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica, 2008, 57(9): 5869-5874.doi:10.7498/aps.57.5869 |
[19] |
Jiang Zhong-Ying, Yu Wei-Zhong, Zhao Yong-Fu, Jiang Xi-Qun, Xia Yuan-Fu.Influence of irradiation dose on free volume and microstructure of SB biblock copolymer study by PALS and FT-IR. Acta Physica Sinica, 2006, 55(7): 3743-3747.doi:10.7498/aps.55.3743 |
[20] |
He Bao-Ping, Chen Wei, Wang Gui-Zhen.A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protons. Acta Physica Sinica, 2006, 55(7): 3546-3551.doi:10.7498/aps.55.3546 |