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Li Ran-Ran, Zhang Yi-Fan, Yin Yu-Peng, Watanabe Hideo, Han Wen-Tuo, Yi Xiao-Ou, Liu Ping-Ping, Zhang Gao-Wei, Zhan Qian, Wan Fa-Rong.In-situstudy of one-dimensional motion of interstitial-type dislocation loops in hydrogen-ion-implanted aluminum. Acta Physica Sinica, 2022, 71(1): 016102.doi:10.7498/aps.71.20211229 |
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Li Ran-Ran, Yin Yu-Peng, Hideo Watanabe, Yi Xiao-Ou, Han Wen-Tuo, Liu Ping-Ping, Zhan Qian, Wan Fa-Rong.Evolution of dislocation loops and effect of annealing temperature on hydrogen-ion-implanted Fe-based binary alloys. Acta Physica Sinica, 2022, 71(13): 136101.doi:10.7498/aps.71.20220137 |
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Wang Jin, He Xin-Fu, Cao Han, Jia Li-Xia, Dou Yan-Kun, Yang Wen.Screw dislocation slip and its interaction with ½[
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Liang Jin-Jie, Gao Ning, Li Yu-Hong.Surface effect on
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Xiong Yu-Wei, Yin Kui-Bo, Wen Yi-Feng, Xin Lei, Yao Li-Bing, Zhu Chong-Yang, Sun Li-Tao.In situobservation of lithiation mechanism of SnO2nanoparticles. Acta Physica Sinica, 2019, 68(15): 158201.doi:10.7498/aps.68.20190431 |
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Cui Li-Juan, Gao Jin, Du Yu-Feng, Zhang Gao-Wei, Zhang Lei, Long Yi, Yang Shan-Wu, Zhan Qian, Wan Fa-Rong.Characterization of dislocation loops in hydrogen-ion irradiated vanadium. Acta Physica Sinica, 2016, 65(6): 066102.doi:10.7498/aps.65.066102 |
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Guo Long-Ting, Sun Ji-Zhong, Huang Yan, Liu Sheng-Guang, Wang De-Zhen.Molecular dynamics simulation of low-energy hydrogen atoms bombarding tungsten (001) surface at different angles and their depth distribution. Acta Physica Sinica, 2013, 62(22): 227901.doi:10.7498/aps.62.227901 |
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Lin Zhi-Yu, Zhang Jin-Cheng, Xu Sheng-Rui, Lü Ling, Liu Zi-Yang, Ma Jun-Cai, Xue Xiao-Yong, Xue Jun-Shuai, Hao Yue.TEM study of GaN films on vicinal sapphire (0001) substrates by MOCVD. Acta Physica Sinica, 2012, 61(18): 186103.doi:10.7498/aps.61.186103 |
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Fang Fang, Zheng Shi-You, Zhou Guang-You, Chen Guo-Rong, Sun Da-Lin.Hydrogen-induced changes in optical and electrical properties of LaMg2Ni alloy film. Acta Physica Sinica, 2008, 57(6): 3813-3817.doi:10.7498/aps.57.3813 |
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Xu Jin, Li Fu-Long, Yang De-Ren.Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy. Acta Physica Sinica, 2007, 56(7): 4113-4116.doi:10.7498/aps.56.4113 |
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