[1] |
Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian.Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2020, 69(20): 207301.doi:10.7498/aps.69.20200714 |
[2] |
Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong.Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica, 2018, 67(17): 178501.doi:10.7498/aps.67.20180474 |
[3] |
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402.doi:10.7498/aps.65.038402 |
[4] |
Zhu Le-Yong, Gao Ya-Na, Zhang Jian-Hua, Li Xi-Feng.High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductor. Acta Physica Sinica, 2015, 64(16): 168501.doi:10.7498/aps.64.168501 |
[5] |
Chai Yu-Hua, Guo Yu-Xiu, Bian Wei, Li Wen, Yang Tao, Yi Ming-Dong, Fan Qu-Li, Xie Ling-Hai, Huang Wei.Progress of flexible organic non-volatile memory field-effect transistors. Acta Physica Sinica, 2014, 63(2): 027302.doi:10.7498/aps.63.027302 |
[6] |
Dong Jing, Chai Yu-Hua, Zhao Yue-Zhi, Shi Wei-Wei, Guo Yu-Xiu, Yi Ming-Dong, Xie Ling-Hai, Huang Wei.The progress of flexible organic field-effect transistors. Acta Physica Sinica, 2013, 62(4): 047301.doi:10.7498/aps.62.047301 |
[7] |
Liu Xing-Hui, Zhang Jun-Song, Wang Ji-Wei, Ao Qiang, Wang Zhen, Ma Ying, Li Xin, Wang Zhen-Shi, Wang Rui-Yu.Study on transport characteristics of CNTFET with HALO-LDD doping structure based on NEGF quantum theory. Acta Physica Sinica, 2012, 61(10): 107302.doi:10.7498/aps.61.107302 |
[8] |
Shi Wei-Wei, Li-Wen, Yi Ming-Dong, Xie Ling-Hai, Wei-Wei, Huang Wei.Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification. Acta Physica Sinica, 2012, 61(22): 228502.doi:10.7498/aps.61.228502 |
[9] |
Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming.Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202.doi:10.7498/aps.60.017202 |
[10] |
Nie Guo-Zheng, Peng Jun-Biao, Zhou Ren-Long.Organic field-effect transistor with low-cost CuI/Al bilayer electrode. Acta Physica Sinica, 2011, 60(12): 127304.doi:10.7498/aps.60.127304 |
[11] |
Jia Quan-Jie, Chen Yu, Tian Xue-Yan, Yao Jiang-Feng, Zhao Su-Ling, Gong Wei, Fan Xing, Xu Zheng, Zhang Fu-Jun.Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors. Acta Physica Sinica, 2011, 60(5): 057201.doi:10.7498/aps.60.057201 |
[12] |
Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang, Wu Hui-Zhen.Study of zinc tin oxide thin-film transistor. Acta Physica Sinica, 2011, 60(3): 037305.doi:10.7498/aps.60.037305 |
[13] |
Jia Quan-Jie, Chen Yu, Tian Xue-Yan, Yao Jiang-Feng, Zhao Su-Ling, Fan Xing, Gong Wei, Xu Zheng, Zhang Fu-Jun.Crystallization and microstructure change of semiconductor active thin layer in polymer organic field-effect transistors. Acta Physica Sinica, 2011, 60(2): 027201.doi:10.7498/aps.60.027201 |
[14] |
Xu Tian-Ning, Wu Hui-Zhen, Zhang Ying-Ying, Wang Xiong, Zhu Xia-Ming, Yuan Zi-Jian.Fabrication and performance of indium oxide based transparent thin film transistors. Acta Physica Sinica, 2010, 59(7): 5018-5022.doi:10.7498/aps.59.5018 |
[15] |
Liu Yu-Rong, Chen Wei, Liao Rong.Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene). Acta Physica Sinica, 2010, 59(11): 8088-8092.doi:10.7498/aps.59.8088 |
[16] |
Sun Qin-Jun, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Gao Li-Yan, Tian Xue-Yan, Wang Yong-Sheng.Contact effect in organic thin film transistors. Acta Physica Sinica, 2010, 59(11): 8125-8130.doi:10.7498/aps.59.8125 |
[17] |
Chen Yue-Ning, Xu Zheng, Zhao Su-Ling, Sun Qin-Jun, Yin Fei-Fei, Dong Yu-Hang.Research on least-squares fitting calculation of the field-effect mobility. Acta Physica Sinica, 2010, 59(11): 8113-8117.doi:10.7498/aps.59.8113 |
[18] |
Liu Yu-Rong, Wang Zhi-Xin, Yu Jia-Le, Xu Hai-Hong.High mobility polymer thin-film transistors. Acta Physica Sinica, 2009, 58(12): 8566-8570.doi:10.7498/aps.58.8566 |
[19] |
Yuan Guang-Cai, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Xu Na, Sun Qin-Jun, Xu Xu-Rong.Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage. Acta Physica Sinica, 2009, 58(7): 4941-4947.doi:10.7498/aps.58.4941 |
[20] |
Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia.Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica, 2003, 52(4): 830-833.doi:10.7498/aps.52.830 |